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Infineon Technologies IRLR3636TRPBF
- Part Number:
- IRLR3636TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2478861-IRLR3636TRPBF
- Description:
- MOSFET N-CH 60V 50A DPAK
- ECAD Model:
-
- Datasheet:
- IRLR3636TRPBF
Infineon Technologies IRLR3636TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR3636TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Voltage60V
- Power Dissipation-Max143W Tc
- Element ConfigurationSingle
- Current50A
- Operating ModeENHANCEMENT MODE
- Power Dissipation143W
- Case ConnectionDRAIN
- Turn On Delay Time45 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.8m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id2.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds3779pF @ 50V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs49nC @ 4.5V
- Rise Time216ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- Fall Time (Typ)69 ns
- Turn-Off Delay Time43 ns
- Continuous Drain Current (ID)99A
- Threshold Voltage2.5V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)16V
- Drain to Source Breakdown Voltage60V
- Max Junction Temperature (Tj)175°C
- Height2.52mm
- Length6.7056mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRLR3636TRPBF Description
IRLR3636TRPBF is a 60V Single N-Channel Power MOSFET. The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The Infineon IRLR3636TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRLR3636TRPBF is in the TO-252-3 package with 143W power dissipation.
IRLR3636TRPBF Features
Optimized for Logic Level Drive
Very Low RDS(ON) at 4.5V VGS
Superior R*Q at 4.5V VGS
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRLR3636TRPBF Applications
DC Motor Drive
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRLR3636TRPBF is a 60V Single N-Channel Power MOSFET. The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The Infineon IRLR3636TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRLR3636TRPBF is in the TO-252-3 package with 143W power dissipation.
IRLR3636TRPBF Features
Optimized for Logic Level Drive
Very Low RDS(ON) at 4.5V VGS
Superior R*Q at 4.5V VGS
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRLR3636TRPBF Applications
DC Motor Drive
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRLR3636TRPBF More Descriptions
Benefits: RoHS Compliant; Logic Level | Target Applications: AC-DC; Battery Operated Drive
Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-252-3
MOSFET, 60V, 99A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, D-PAK
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 143W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-252-3
MOSFET, 60V, 99A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, D-PAK
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 60V, 50A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 143W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to IRLR3636TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTechnologyTerminal FormJESD-30 CodeNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-609 CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeNominal VgsSurface MountConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Pbfree CodeTerminal PositionReach Compliance CodePin CountQualification StatusDrain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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IRLR3636TRPBF12 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2009Active1 (Unlimited)2EAR99MOSFET (Metal Oxide)GULL WINGR-PSSO-G21160V143W TcSingle50AENHANCEMENT MODE143WDRAIN45 nsN-ChannelSWITCHING6.8m Ω @ 50A, 10V2.5V @ 100μA3779pF @ 50V50A Tc49nC @ 4.5V216ns4.5V 10V±16V69 ns43 ns99A2.5VTO-252AA16V60V175°C2.52mm6.7056mm6.22mmNo SVHCNoROHS3 CompliantLead Free-------------------------- -
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTubeHEXFET®2003Discontinued1 (Unlimited)2EAR99MOSFET (Metal Oxide)GULL WINGR-PSSO-G21--45W TcSingle-ENHANCEMENT MODE38WDRAIN8.5 nsN-ChannelSWITCHING45m Ω @ 14A, 10V1V @ 250μA450pF @ 25V23A Tc15nC @ 4.5V140ns4V 10V±16V20 ns12 ns23A1VTO-252AA16V30V-2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Freee345mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose Power30V26023A3096A30V77 mJ97 ns1 V-----------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2001Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-----28W Tc--ENHANCEMENT MODE---N-Channel-140m Ω @ 6A, 10V1V @ 250μA265pF @ 25V10A Tc7.9nC @ 5V-4.5V 10V±16V-------------Non-RoHS Compliant-----FET General Purpose Power---------YESSingle55V10A-------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)2-MOSFET (Metal Oxide)GULL WINGR-PSSO-G21--2.5W Ta 46W Tc--ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING120m Ω @ 6.5A, 5V2V @ 250μA755pF @ 25V13A Tc24nC @ 5V-5V±20V-------------ROHS3 Compliant-e3-MATTE TIN---NOT SPECIFIED-NOT SPECIFIED45A-225 mJ--YESSINGLE WITH BUILT-IN DIODE100V13AyesSINGLEunknown3COMMERCIAL0.12Ohm100V
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