Infineon Technologies IRLR120NPBF

Name: IRLR120NPBF
Brand: Infineon Technologies
SKU: 2480284-IRLR120NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLR120NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2480284-IRLR120NPBF

Description:: MOSFET N-CH 100V 10A DPAK

ECAD Model:

Datasheet:: IRLR120NPBF

Specifications

Infineon Technologies IRLR120NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLR120NPBF.

Factory Lead Time
39 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
48W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
185m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
RoHS Status
ROHS3 Compliant

Description

IRLR120NPBF Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRLR120NPBF Features Surface Mount (IRL R120N) Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free

IRLR120NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W
Transistor MOSFET Negative Channel 100 Volt 10A 3-Pin(2 Tab) DPAK
Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):185mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:10A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Power Dissipation Ptot Max:48W; Pulse Current Idm:35A; SMD Marking:IRLR120NPBF; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRLR120NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Mount

Number of Pins

Transistor Element Material

JESD-609 Code

Number of Terminations

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Supplier Device Package

Input Capacitance

Rds On Max

Surface Mount

Pbfree Code

Terminal Position

Reach Compliance Code

Pin Count

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRLR120NPBF

Infineon Technologies

39 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tube

HEXFET®

1998

Discontinued

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

48W Tc

N-Channel

185m Ω @ 6A, 10V

2V @ 250μA

440pF @ 25V

10A Tc

20nC @ 5V

100V

4V 10V

±16V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLR3105PBF

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~175°C TJ

Tube

HEXFET®

2008

Discontinued

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

57W Tc

N-Channel

37m Ω @ 15A, 10V

3V @ 250μA

710pF @ 25V

25A Tc

20nC @ 5V

-

5V 10V

±16V

ROHS3 Compliant

Surface Mount

3

SILICON

e3

2

37mOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

FET General Purpose Power

55V

GULL WING

260

25A

30

R-PSSO-G2

1

Single

ENHANCEMENT MODE

57W

DRAIN

8 ns

SWITCHING

57ns

37 ns

25 ns

25A

3V

TO-252AA

16V

55V

55V

3 V

2.39mm

6.73mm

6.223mm

No SVHC

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRLR120NPBF vs IRLR3105PBF
IRLR024TRR

Vishay Siliconix

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~150°C TJ

Tape & Reel (TR)

-

1997

Active

1 (Unlimited)

-

MOSFET (Metal Oxide)

2.5W Ta 42W Tc

N-Channel

100mOhm @ 8.4A, 5V

2V @ 250μA

870pF @ 25V

14A Tc

18nC @ 5V

60V

4V 5V

±10V

Non-RoHS Compliant

Surface Mount

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

14A

-

-

-

-

-

-

-

-

-

-

-

-

D-Pak

870pF

100 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

IRLR120NPBF vs IRLR024TRR
IRLR130ATM

Fairchild/ON Semiconductor

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

MOSFET (Metal Oxide)

2.5W Ta 46W Tc

N-Channel

120m Ω @ 6.5A, 5V

2V @ 250μA

755pF @ 25V

13A Tc

24nC @ 5V

100V

5V

±20V

ROHS3 Compliant

-

-

SILICON

e3

2

-

MATTE TIN

-

-

-

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

R-PSSO-G2

1

-

ENHANCEMENT MODE

-

DRAIN

-

SWITCHING

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

YES

yes

SINGLE

unknown

3

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

13A

0.12Ohm

45A

100V

225 mJ

IRLR120NPBF vs IRLR130ATM