Vishay Siliconix IRLR110PBF

Name: IRLR110PBF
Brand: Vishay Siliconix
SKU: 2478712-IRLR110PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLR110PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2478712-IRLR110PBF

Description:: MOSFET N-CH 100V 4.3A DPAK

ECAD Model:

Datasheet:: IRLR110PBF

Specifications

Vishay Siliconix IRLR110PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLR110PBF.

Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Supplier Device Package
D-Pak
Weight
1.437803g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
540MOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
4.3A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 25W Tc
Element Configuration
Single
Power Dissipation
25W
Turn On Delay Time
9.3 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
540mOhm @ 2.6A, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
250pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4.3A Tc
Gate Charge (Qg) (Max) @ Vgs
6.1nC @ 5V
Rise Time
47ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
4V 5V
Vgs (Max)
±10V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
4.3A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
10V
Drain to Source Breakdown Voltage
100V
Input Capacitance
250pF
Drain to Source Resistance
540mOhm
Rds On Max
540 mΩ
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRLR110PBF Overview
The maximum input capacitance of this device is 250pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4.3A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 16 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 540mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (4V 5V), this device helps reduce its power consumption.

IRLR110PBF Features
a continuous drain current (ID) of 4.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 540mOhm
a threshold voltage of 2V
a 100V drain to source voltage (Vdss)

IRLR110PBF Applications
There are a lot of Vishay Siliconix
IRLR110PBF applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRLR110PBF More Descriptions

Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs /-10V
Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252
Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL MOSFET, 100V, 4.3A, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No
MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

Product Comparison

The three parts on the right have similar specifications to IRLR110PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRLR110PBF

Vishay Siliconix

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

D-Pak

1.437803g

-55°C~150°C TJ

Tube

2008

Active

1 (Unlimited)

540MOhm

150°C

-55°C

100V

MOSFET (Metal Oxide)

4.3A

1

1

2.5W Ta 25W Tc

Single

25W

9.3 ns

N-Channel

540mOhm @ 2.6A, 5V

2V @ 250μA

250pF @ 25V

4.3A Tc

6.1nC @ 5V

47ns

100V

4V 5V

±10V

17 ns

16 ns

4.3A

2V

10V

100V

250pF

540mOhm

540 mΩ

2.39mm

6.73mm

6.22mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLR3103TRR

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

D-Pak

-

-55°C~175°C TJ

Tape & Reel (TR)

1998

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

107W Tc

-

-

-

N-Channel

19mOhm @ 33A, 10V

1V @ 250μA

1600pF @ 25V

55A Tc

50nC @ 4.5V

-

30V

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRLR110PBF vs IRLR3103TRR
IRLR130ATM

Fairchild/ON Semiconductor

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

2.5W Ta 46W Tc

-

-

-

N-Channel

120m Ω @ 6.5A, 5V

2V @ 250μA

755pF @ 25V

13A Tc

24nC @ 5V

-

100V

5V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

YES

SILICON

e3

yes

2

MATTE TIN

SINGLE

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

13A

0.12Ohm

45A

100V

225 mJ

IRLR110PBF vs IRLR130ATM
IRLR024TR

Vishay Siliconix

21 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

2

D-Pak

-

-55°C~150°C TJ

Tape & Reel (TR)

2016

Active

1 (Unlimited)

-

150°C

-55°C

60V

MOSFET (Metal Oxide)

14A

-

-

2.5W Ta 42W Tc

Single

2.5W

11 ns

N-Channel

100mOhm @ 8.4A, 5V

2V @ 250μA

870pF @ 25V

14A Tc

18nC @ 5V

110ns

60V

4V 5V

±10V

41 ns

23 ns

14A

-

10V

60V

870pF

100mOhm

100 mΩ

-

-

-

-

No

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRLR110PBF vs IRLR024TR

Certification

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IRLR110PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(2 Tab) DPAK RoHS: Compliant	1883	1 $0.7643 10 $0.5395 100 $0.4847 500 $0.3709 1000 $0.3338 3000 $0.3217
IRLR110TRPBF DISTI #IRLR110TRPBF	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK RoHS: Compliant	6705	1 $0.96 10 $0.841 100 $0.6492 500 $0.48086 1000 $0.38468
IRLR110TRPBF DISTI #IRLR110TRPBF	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK RoHS: Compliant	6705	1 $0.96 10 $0.841 100 $0.6492 500 $0.48086 1000 $0.38468
IRLR110TRPBF DISTI #IRLR110TRPBF	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK RoHS: Compliant	6000	2000 $0.33846
IRLR110PBF DISTI #IRLR110PBF	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK RoHS: Compliant	3423	1 $1.12 75 $0.9 150 $0.78747 525 $0.6107 1050 $0.48213
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(2 Tab) DPAK RoHS: Compliant	1883	18 $0.5395 100 $0.4847 500 $0.3709 1000 $0.3338
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(2 Tab) DPAK RoHS: Compliant	702	100 $0.3004 500 $0.2937 1000 $0.2869
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(2 Tab) DPAK - Bu RoHS: Not Compliant	1161	1 $0.3589 10 $0.3499 25 $0.3419 50 $0.3279 100 $0.3129 500 $0.3059 1000 $0.2989
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(2 Tab) DPAK (Alt RoHS: Compliant	0	1 $0.4809 10 $0.3279 25 $0.2819 50 $0.2609 100 $0.2509 500 $0.2469 1000 $0.2419
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	MOSFET Transistor, N Channel, 4.3 A, 100 V, 540 mo	55	1 $1 10 $0.834 25 $0.773 50 $0.712 100 $0.652 500 $0.569 1000 $0.461
IRLR110PBF. DISTI #IRLR110PBF.	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 4.3A, D-PAK, Transistor P	1161	1 $1 10 $0.834 25 $0.773 50 $0.712 100 $0.652 500 $0.569 1000 $0.461
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.54Oh RoHS: Compliant	0	3000 $0.608 6000 $0.598 15000 $0.578
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	MOSFET N-Chan 100V 4.3 Amp RoHS: Compliant	4501	1 $0.96 10 $0.788 100 $0.604 500 $0.52 1000 $0.41 3000 $0.383 6000 $0.364 9000 $0.35
IRLR110 DISTI #IRLR110	Vishay Intertechnologies	MOSFET N-Chan 100V 4.3 Amp RoHS: Not Compliant	0	1 $2.86 10 $2.37 100 $1.95 250 $1.89 500 $1.7 1000 $1.43
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	N-LogL 100V 4,3A 25W 0,54R TO252AA RoHS: Compliant	1325	25 $0.3885 150 $0.2685 300 $0.2285 600 $0.219
IRLR110TRLPBF DISTI #IRLR110TRLPBF	Vishay Intertechnologies	N-LogL 100V 4,3A 25W 0,54R TO252AA RoHS: Compliant	1300	25 $0.3845 100 $0.2645 300 $0.2245 1000 $0.216
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	RoHS: Compliant	4125
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	AVAILABLE	20
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	MOSFET, N, 100V, 4.3A, D-PAK RoHS: Compliant	1011	5 $0.681 25 $0.609 100 $0.466 250 $0.434 500 $0.401
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 4.3A 3-Pin(2 Tab) DPAK RoHS: Compliant	1883	10 $0.6569 100 $0.5348 500 $0.4664 1000 $0.3897
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	MOSFET N-Chan 100V 4.3 Amp RoHS: Compliant	0
IRLR110PBF DISTI #IRLR110PBF	Vishay Intertechnologies	MOSFET, N, 100V, 4.3A, D-PAK RoHS: Compliant	55	1 $1.53 10 $1.25 100 $0.956 500 $0.824 1000 $0.649 3000 $0.606 6000 $0.577 9000 $0.554

IRLR110~~(12)~~
IRLR11~~(12)~~
IRLR1~~(42)~~
IRLR~~(55)~~
IRL~~(58)~~

Vishay Siliconix IRLR110PBF

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