Infineon Technologies IRL3303D1S
- Part Number:
- IRL3303D1S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492000-IRL3303D1S
- Description:
- MOSFET N-CH 30V 38A D2PAK
- Datasheet:
- IRL3303
Infineon Technologies IRL3303D1S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3303D1S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max68W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs26m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C38A Tc
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- RoHS StatusNon-RoHS Compliant
IRL3303D1S Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 870pF @ 25V maximal input capacitance.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRL3303D1S Features
a 30V drain to source voltage (Vdss)
IRL3303D1S Applications
There are a lot of Infineon Technologies
IRL3303D1S applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 870pF @ 25V maximal input capacitance.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRL3303D1S Features
a 30V drain to source voltage (Vdss)
IRL3303D1S Applications
There are a lot of Infineon Technologies
IRL3303D1S applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRL3303D1S More Descriptions
MOSFET N-CH 30V 38A D2PAK
The three parts on the right have similar specifications to IRL3303D1S.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusMountNumber of PinsSupplier Device PackageMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningLead FreeSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRL3303D1SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)MOSFET (Metal Oxide)68W TcN-Channel26m Ω @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V30V4.5V 10V±16VNon-RoHS Compliant------------------------------------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTubeHEXFET®2003Obsolete1 (Unlimited)MOSFET (Metal Oxide)140W TcN-Channel7mOhm @ 64A, 7V700mV @ 250μA4700pF @ 15V110A Tc110nC @ 4.5V20V4.5V 7V±10VRoHS CompliantSurface Mount3D2PAK150°C-55°C20V110ASingle140W10 ns140ns130 ns96 ns110A10V20V4.7nF7mOhm7 mΩ4.83mm10.67mm9.65mmNoLead Free-----------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTubeHEXFET®1998Obsolete1 (Unlimited)MOSFET (Metal Oxide)69W TcN-Channel16m Ω @ 29A, 7V700mV @ 250μA2000pF @ 15V48A Tc43nC @ 4.5V20V4.5V 7V±10VNon-RoHS Compliant------------------------YESSILICONe32EAR99MATTE TIN OVER NICKELFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING48A0.019Ohm190A20V270 mJ
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 68W TcN-Channel26mOhm @ 20A, 10V1V @ 250μA870pF @ 25V38A Tc26nC @ 4.5V30V4.5V 10V±16VNon-RoHS Compliant--TO-262--------------------------------------------
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