Infineon Technologies IRL3103PBF

Name: IRL3103PBF
Brand: Infineon Technologies
SKU: 2479674-IRL3103PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRL3103PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479674-IRL3103PBF

Description:: MOSFET N-CH 30V 64A TO-220AB

ECAD Model:

Datasheet:: IRL3103PBF

Specifications

Infineon Technologies IRL3103PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRL3103PBF.

Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2001
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
12MOhm
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
64A
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
94W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
83W
Case Connection
DRAIN
Turn On Delay Time
8.9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 34A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
64A Tc
Gate Charge (Qg) (Max) @ Vgs
33nC @ 4.5V
Rise Time
120ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
9.1 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
64A
Threshold Voltage
1V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
16V
Drain Current-Max (Abs) (ID)
56A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
220A
Dual Supply Voltage
30V
Nominal Vgs
1 V
Height
15.24mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRL3103PBF Description
IRL3103PBF is a 300v HEXFET? Power MOSFET. The Infineon IRL3103PBF features benchmark on-state resistance (RDS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries, and power supply applications. Additionally, the IRL3103PBF’s higher current rating provides more guard bands from unwanted transients and reduces part count in parallel-type topologies where several MOSFETs share high current.

IRL3103PBF Features
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

IRL3103PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits

IRL3103PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 12 Milliohms;ID 64A;TO-220AB;PD 94W;VGS /-1
Single N-Channel 30 V 12 mOhm 33 nC HEXFET® Power Mosfet - TO-220-3
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 30V 64A 3-Pin(3 Tab) TO-220AB Tube
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
N CHANNEL MOSFET, 30V, 64A TO-220AB; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:30V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

Product Comparison

The three parts on the right have similar specifications to IRL3103PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

Recovery Time

View Compare
IRL3103PBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2001

Not For New Designs

1 (Unlimited)

3

Through Hole

EAR99

12MOhm

HIGH RELIABILITY, AVALANCHE RATED

FET General Purpose Power

30V

MOSFET (Metal Oxide)

64A

2.54mm

1

94W Tc

Single

ENHANCEMENT MODE

83W

DRAIN

8.9 ns

N-Channel

SWITCHING

12m Ω @ 34A, 10V

1V @ 250μA

1650pF @ 25V

64A Tc

33nC @ 4.5V

120ns

4.5V 10V

±16V

9.1 ns

14 ns

64A

1V

TO-220AB

16V

56A

30V

220A

30V

1 V

15.24mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-
IRL3303STRRPBF

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

3.8W Ta 68W Tc

-

-

-

-

-

N-Channel

-

26m Ω @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

30V

-

-

-

-

-

-

-

IRL3103PBF vs IRL3303STRRPBF
IRL3303SPBF

Infineon Technologies

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

-

30V

MOSFET (Metal Oxide)

38A

-

-

3.8W Ta 68W Tc

Single

-

68W

-

7.4 ns

N-Channel

-

26mOhm @ 20A, 10V

1V @ 250μA

870pF @ 25V

38A Tc

26nC @ 4.5V

200ns

4.5V 10V

±16V

36 ns

14 ns

38A

-

-

16V

-

30V

-

-

-

4.572mm

10.668mm

9.65mm

-

No

RoHS Compliant

Lead Free

30V

D2PAK

175°C

-55°C

870pF

40mOhm

26 mΩ

-

IRL3103PBF vs IRL3303SPBF
IRL3202PBF

Infineon Technologies

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~150°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

-

20V

MOSFET (Metal Oxide)

48A

-

-

69W Tc

Single

-

69W

-

8.5 ns

N-Channel

-

16mOhm @ 29A, 7V

700mV @ 250μA

2000pF @ 15V

48A Tc

43nC @ 4.5V

100ns

4.5V 7V

±10V

82 ns

12 ns

48A

-

-

10V

-

20V

-

-

700 mV

15.24mm

10.5156mm

4.69mm

No SVHC

-

RoHS Compliant

Lead Free

20V

TO-220AB

150°C

-55°C

2nF

19mOhm

16 mΩ

100 ns

IRL3103PBF vs IRL3202PBF

Certification

Related parts for IRL3103PBF

IRL3103D1STRLP

Infineon Technologies

MOSFET N-CH 30V 64A D2PAK
IRL3303STRRPBF

Infineon Technologies

MOSFET N-CH 30V 38A D2PAK
IRL3303PBF

Infineon Technologies

MOSFET N-CH 30V 38A TO-220AB
IRL3303SPBF

Infineon Technologies

MOSFET N-CH 30V 38A D2PAK
IRL3502PBF

Infineon Technologies

MOSFET N-CH 20V 110A TO-220AB
IRL3202PBF

Infineon Technologies

MOSFET N-CH 20V 48A TO-220AB
IRL3502SPBF

Infineon Technologies

MOSFET N-CH 20V 110A D2PAK
IRL3202S

Infineon Technologies

MOSFET N-CH 20V 48A D2PAK
IRL3303L

Infineon Technologies

MOSFET N-CH 30V 38A TO-262
IRL3103L

Infineon Technologies

MOSFET N-CH 30V 64A TO-262

Popular Search Part Number Related Keywords Search Tags

IRL3103PBF Price
IRL3103PBF Picture
IRL3103PBF Buy
IRL3103PBF Distributor
IRL3103PBF Image
IRL3103PBF Inquiry
IRL3103PBF Manufacturer
IRL3103PBF Part
IRL3103PBF Description
IRL3103PBF Technical Data
IRL3103PBF Stock
IRL3103PBF Wholesales
IRL3103PBF PDF
IRL3103PBF Inventory
IRL3103PBF Supplier
IRL3103PBF Datasheet
IRL3103PBF Rfq
IRL3103PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	MOSFET N-CH 30V 64A TO-220AB RoHS: Compliant	4477	1 $1.37 10 $1.215 100 $0.9602 500 $0.74466 1000 $0.5879
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	3000	5 $1.46 10 $1.31 50 $0.881 100 $0.769 200 $0.745 500 $0.657 1000 $0.603 3000 $0.585
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 64A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	1500	1 $0.5569 10 $0.4949 25 $0.4459 50 $0.4049 100 $0.3709 500 $0.3429 1000 $0.3179
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 64A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	3000 $0.4099 5000 $0.3949 8000 $0.3809 15000 $0.3679 30000 $0.3619
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	MOSFET, N, 30V, 56A, TO-220, Transistor Polarity:	0	1 $1.17 10 $0.998 100 $0.767 500 $0.677 1000 $0.566 2500 $0.534
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 64A TO-220AB, Transistor P	446	1 $0.617 10 $0.617 100 $0.617 500 $0.617 1000 $0.566 2500 $0.534
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 12 Mill RoHS: Compliant	0	3000 $1.93 6000 $1.891 15000 $1.834 30000 $1.756 75000 $1.641
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB RoHS: Compliant	0	1 $1.17 10 $0.998 100 $0.767 500 $0.677 1000 $0.535 2000 $0.474
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	Power Field-Effect Transistor, 64A I(D), 30V, 0.01 RoHS: Compliant	150	1 $0.58 25 $0.54 100 $0.52 500 $0.5 1000 $0.47
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	MOSFET N-CH 30V 64A HEXFET TO-220AB, TU	250	50 $0.736 250 $0.555 500 $0.484
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 30V, 56A, 83W,	207	1 $0.69 3 $0.63 10 $0.53 50 $0.47
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	N-LogL 30V 64A 94W 0,012R TO220AB RoHS: Compliant	870	10 $0.625 50 $0.385 200 $0.325 500 $0.3129
IRL3103PBF DISTI #IRL3103PBF	International Rectifier	RoHS: Compliant	510
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	MOSFET, N, 30V, 56A, TO-220 RoHS: Compliant	3165	5 $0.733 25 $0.641 100 $0.473 250 $0.462 500 $0.367
IRL3103PBF DISTI #IRL3103PBF	Infineon Technologies AG	MOSFET, N, 30V, 56A, TO-220 RoHS: Compliant	3153	1 $1.85 10 $1.58 100 $1.22 500 $1.08 1000 $0.847 2000 $0.75

IRL3103~~(26)~~
IRL310~~(32)~~
IRL31~~(32)~~
IRL3~~(56)~~
IRL~~(58)~~

Infineon Technologies IRL3103PBF

Quick Request Quote

Power MOSFET IRFP460: Manufacturer, Technical Parameters and Applications

Do You Know the CD4046BE CMOS Micropower Phase Locked Loop?

MPX2010DP Pressure Sensor: Manufacturer, Pin Configuration, and Applications

S8050 Bipolar Transistor: Manufacturer, Specifications, S8050 vs SS8050 and More Details