Infineon Technologies IRGP4620D-EPBF
- Part Number:
- IRGP4620D-EPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497108-IRGP4620D-EPBF
- Description:
- IGBT 600V 32A 140W TO247AD
- ECAD Model:
-
- Datasheet:
- IRGx4620D(-E)PbF
Infineon Technologies IRGP4620D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4620D-EPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Published2008
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation140W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max140W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.85V
- Max Collector Current32A
- Reverse Recovery Time68 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.55V
- Test Condition400V, 12A, 22 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 12A
- Gate Charge25nC
- Current - Collector Pulsed (Icm)36A
- Td (on/off) @ 25°C31ns/83ns
- Switching Energy75μJ (on), 225μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
IRGP4620D-EPBF Description
Based on numerous technologies that minimize switching and conduction losses in order to maximize efficiency, decrease thermal issues, and improve power density, IRGP4620D-EPBF offers a substantial IGBT portfolio spanning from 300V to 1200V. The business also provides a wide selection of IGBT die made especially for medium- to high-power modules. Solderable front metal (SFM) die can be used in modules that require the highest level of dependability to do away with bond wires, enabling dual sided cooling for better thermal performance, reliability, and efficiency.
IRGP4620D-EPBF Features
5μs Short Circuit SOA
Lead-Free, RoHS Compliant
Low VCE(ON)and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON)temperature coefficient and tight distribution of parameters
IRGP4620D-EPBF Applications
Industrial
Automotive
Enterprise systems
Based on numerous technologies that minimize switching and conduction losses in order to maximize efficiency, decrease thermal issues, and improve power density, IRGP4620D-EPBF offers a substantial IGBT portfolio spanning from 300V to 1200V. The business also provides a wide selection of IGBT die made especially for medium- to high-power modules. Solderable front metal (SFM) die can be used in modules that require the highest level of dependability to do away with bond wires, enabling dual sided cooling for better thermal performance, reliability, and efficiency.
IRGP4620D-EPBF Features
5μs Short Circuit SOA
Lead-Free, RoHS Compliant
Low VCE(ON)and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON)temperature coefficient and tight distribution of parameters
IRGP4620D-EPBF Applications
Industrial
Automotive
Enterprise systems
IRGP4620D-EPBF More Descriptions
Trans IGBT Chip N-CH 600V 32A 140000mW 3-Pin(3 Tab) TO-247AD Tube
IGBT, SINGLE, 600V, 32A, TO-247AD-3; DC Collector Current: 32A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 140W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. o
Igbt, 600V, 32A, 140W, To-247Ad; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4620D-EPBF..
IGBT, SINGLE, 600V, 32A, TO-247AD-3; DC Collector Current: 32A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 140W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. o
Igbt, 600V, 32A, 140W, To-247Ad; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4620D-EPBF..
The three parts on the right have similar specifications to IRGP4620D-EPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Element ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCRoHS StatusBase Part NumberFall Time-Max (tf)Factory Lead TimeTransistor Element MaterialNumber of TerminationsQualification StatusNumber of ElementsRise Time-MaxCase ConnectionTransistor ApplicationJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)IGBT TypeView Compare
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IRGP4620D-EPBFThrough HoleThrough HoleTO-247-33-40°C~175°C TJTube2008Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors140WNOT SPECIFIEDNOT SPECIFIEDSingleStandard140WN-CHANNEL1.85V32A68 ns600V1.55V400V, 12A, 22 Ω, 15V1.85V @ 15V, 12A25nC36A31ns/83ns75μJ (on), 225μJ (off)20V6.5VNo SVHCRoHS Compliant--------------- -
Through HoleThrough HoleTO-247-33-40°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors250WNOT SPECIFIEDNOT SPECIFIEDSingleStandard250WN-CHANNEL1.9V65A-600V1.6V400V, 24A, 10 Ω, 15V1.9V @ 15V, 24A75nC72A40ns/105ns100μJ (on), 600μJ (off)20V6.5VNo SVHCRoHS CompliantIRGP464040ns------------
-
------2016Obsolete1 (Unlimited)-----------------------RoHS Compliant--------------
-
Through HoleThrough HoleTO-247-33-55°C~175°C TJTube2011Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors268WNOT SPECIFIEDNOT SPECIFIEDSingleStandard268WN-CHANNEL1.85V76A-600V1.6V400V, 35A, 10 Ω, 15V1.85V @ 15V, 35A104nC105A46ns/105ns390μJ (on), 632μJ (off)20V6.5VNo SVHCRoHS Compliant-54ns14 WeeksSILICON3Not Qualified142nsCOLLECTORPOWER CONTROLTO-247AD78 ns188 nsTrench
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