Infineon Technologies IRG4BC30KDPBF

Name: IRG4BC30KDPBF
Brand: Infineon Technologies
SKU: 2494654-IRG4BC30KDPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG4BC30KDPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2494654-IRG4BC30KDPBF

Description:: IGBT 600V 28A 100W TO220AB

ECAD Model:

Datasheet:: IRG4BC30KDPbF

Specifications

Infineon Technologies IRG4BC30KDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC30KDPBF.

Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
100W
Current Rating
28A
Number of Elements
1
Element Configuration
Single
Power Dissipation
100W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
60 ns
Transistor Application
MOTOR CONTROL
Rise Time
42ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
160 ns
Collector Emitter Voltage (VCEO)
2.7V
Max Collector Current
28A
Reverse Recovery Time
42 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.21V
Turn On Time
100 ns
Test Condition
480V, 16A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 16A
Turn Off Time-Nom (toff)
370 ns
Gate Charge
67nC
Current - Collector Pulsed (Icm)
56A
Td (on/off) @ 25°C
60ns/160ns
Switching Energy
600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Fall Time-Max (tf)
120ns
Height
8.763mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IRG4BC30KDPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRG4BC30KDPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRG4BC30KDPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IRG4BC30KDPBF More Descriptions

Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3 Tab) TO-220AB Tube
INTERNATIONAL RECTIFIER IRG4BC30KDPBF / IGBT W/DIODE 600V 28A TO220AB
IRG4BC30KDPBF, IGBT Transistor, 28 A 600 V, 3-Pin TO-220AB
IRG4BC30 Series 600 V 16 A N-Channel Ultra Fast IGBT - TO-220AB
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.7 V Current release time: 160 ns Power dissipation: 100 W
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
IGBT, TO-220; DC Collector Current: 28A; Collector Emitter Saturation Voltage Vce(on): 2.21V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating T
IGBT, 600V, 28A, TO-220; Transistor Type:IGBT; DC Collector Current:28A; Collector Emitter Voltage Vces:2.21V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:28A; Current Temperature:25°C; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:58A; Rise Time:42ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Product Comparison

The three parts on the right have similar specifications to IRG4BC30KDPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Terminal Form

Base Part Number

JESD-30 Code

Power - Max

Max Breakdown Voltage

Surface Mount

JESD-609 Code

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Power Dissipation-Max (Abs)

View Compare
IRG4BC30KDPBF

Infineon Technologies

16 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

3

Through Hole

EAR99

LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

600V

100W

28A

1

Single

100W

COLLECTOR

Standard

60 ns

MOTOR CONTROL

42ns

N-CHANNEL

160 ns

2.7V

28A

42 ns

TO-220AB

600V

2.21V

100 ns

480V, 16A, 23 Ω, 15V

2.7V @ 15V, 16A

370 ns

67nC

56A

60ns/160ns

600μJ (on), 580μJ (off)

20V

6V

120ns

8.763mm

10.5156mm

4.69mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRG4BC30S-STRLP

Infineon Technologies

11 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

Obsolete

1 (Unlimited)

2

-

EAR99

-

-

-

100W

-

1

Single

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

1.6V

34A

-

-

600V

-

40 ns

480V, 18A, 23 Ω, 15V

1.6V @ 15V, 18A

1550 ns

50nC

68A

22ns/540ns

260μJ (on), 3.45mJ (off)

-

-

-

-

-

-

-

No

RoHS Compliant

-

yes

GULL WING

IRG4BC30S-SPBF

R-PSSO-G2

100W

600V

-

-

-

-

-

-

-

-

-

-

-

IRG4BC30KDPBF vs IRG4BC30S-STRLP
IRG4BC20FD-STRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

Obsolete

1 (Unlimited)

2

-

-

-

-

-

-

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

37ns

-

-

-

63 ns

480V, 9A, 50 Ω, 15V

2V @ 15V, 9A

610 ns

27nC

64A

43ns/240ns

250μJ (on), 640μJ (off)

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

GULL WING

-

R-PSSO-G2

60W

-

YES

e3

MATTE TIN OVER NICKEL

SINGLE

260

30

Not Qualified

SINGLE WITH BUILT-IN DIODE

600V

16A

-

IRG4BC30KDPBF vs IRG4BC20FD-STRR
IRG4BC30S-S

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tube

2000

Obsolete

1 (Unlimited)

2

-

EAR99

-

Insulated Gate BIP Transistors

-

-

-

1

-

-

COLLECTOR

Standard

-

POWER CONTROL

-

N-CHANNEL

-

-

-

-

-

-

-

40 ns

480V, 18A, 23 Ω, 15V

1.6V @ 15V, 18A

1550 ns

50nC

68A

22ns/540ns

260μJ (on), 3.45mJ (off)

20V

6V

590ns

-

-

-

-

-

Non-RoHS Compliant

-

-

GULL WING

-

R-PSSO-G2

100W

-

YES

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

260

30

-

SINGLE

600V

34A

100W

IRG4BC30KDPBF vs IRG4BC30S-S

Certification

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IRG4BC30KDPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRG4BC30KDPBF DISTI #V36:1790_13892392	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(3 Tab) TO-220A	1456	1 $3.3209 10 $2.632 100 $2.329 250 $2.096 500 $1.887 1000 $1.698 2000 $1.604
IRG4BC30KDPBF DISTI #V99:2348_13892392	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(3 Tab) TO-220A	349	1 $3.3209 10 $2.632 100 $2.329 250 $2.096 500 $1.887 1000 $1.729
IRG4BC30KDPBF DISTI #IRG4BC30KDPBF-ND	Infineon Technologies AG	IGBT 600V 28A 100W TO220AB RoHS: Compliant	0	1000 $1.95216
IRG4BC30KDPBF DISTI #30701753	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(3 Tab) TO-220A	2667	7 $1.4776
IRG4BC30KDPBF DISTI #26194547	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(3 Tab) TO-220A	1456	4 $3.2465 10 $2.8294 100 $2.5048 250 $2.2543 500 $2.0285 1000 $1.8254 2000 $1.7243
IRG4BC30KDPBF DISTI #26198378	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(3 Tab) TO-220A	349	4 $3.2465 10 $2.8294 100 $2.5048 250 $2.2543 500 $2.0285 1000 $1.8587
IRG4BC30KDPBF DISTI #SP001532644	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(3 Tab) TO-220A RoHS: Compliant	1450	1 $1.79 10 $1.69 25 $1.59 50 $1.49 100 $1.49 500 $1.39 1000 $1.29
IRG4BC30KDPBF DISTI #IRG4BC30KDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(3 Tab) TO-220A RoHS: Compliant	0	220 $1.59 440 $1.49 660 $1.49 1100 $1.39 2200 $1.39
IRG4BC30KDPBF DISTI #IRG4BC30KDPBF	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(3 Tab) TO-220A RoHS: Compliant	0	1000 $1.79 2000 $1.69 4000 $1.69 6000 $1.59 10000 $1.59
IRG4BC30KDPBF DISTI #63J7487	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 28A 3-Pin(3 Tab) TO-220A RoHS: Compliant	0
IRG4BC30KDPBF DISTI #63J7487	Infineon Technologies AG	SINGLE IGBT, 600V, 28A, DC Collector Current:28A,	10	1 $0.391 10 $0.391 25 $0.391 50 $0.391 100 $0.391 250 $0.391 500 $0.391
IRG4BC30KDPBF DISTI #70017507	Infineon Technologies AG	600V ULTRAFAST 8-25 KHZ COPACK IGBT IN A TO-220AB RoHS: Compliant	92	1 $4.93 10 $4.35 100 $3.79 500 $3.29 1000 $2.9
IRG4BC30KDPBF DISTI #942-IRG4BC30KDPBF	Infineon Technologies AG	IGBT Transistors 600V UltraFast 8-25kHz RoHS: Compliant	439	1 $3.51 10 $2.98 100 $2.59 250 $2.45 500 $2.2 1000 $1.86 2000 $1.76
IRG4BC30KDPBF DISTI #	International Rectifier	Insulated Gate Bipolar Transistor, 28A I(C), 600V RoHS: Compliant	2175	1 $1.85 25 $1.71 100 $1.64 500 $1.58 1000 $1.5
IRG4BC30KDPBF DISTI #5430153P	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 28A TO220AB, TU	651	25 $1.85 100 $1.81 250 $1.73 500 $1.55
IRG4BC30KDPBF DISTI #5430153	Infineon Technologies AG	TRANSISTOR IGBT N-CH 600V 28A TO220AB, EA	209	1 $3.11 25 $1.85 100 $1.81 250 $1.73 500 $1.55
IRG4BC30KDPBF DISTI #IRG4BC30KDPBF	Infineon Technologies AG	Transistor: IGBT, 600V, 28A, 100W, TO220AB	71	1 $2.66 3 $2.36 10 $2.12 50 $1.97
IRG4BC30KDPBF DISTI #8650390	Infineon Technologies AG	IGBT, 600V, 28A, TO-220 RoHS: Compliant	684	1 $5.4 10 $4.58 100 $3.98 250 $3.77 500 $3.39
IRG4BC30KDPBF DISTI #8650390	Infineon Technologies AG	IGBT, 600V, 28A, TO-220	675	1 $3.13 10 $2.37 100 $2.05 250 $1.95 500 $1.74
IRG4BC30KDPBF DISTI #XSKDRABV0021546	Infineon Technologies AG	Power Field-Effect Transistor,120AI(D),75V,0.0041o RoHS: Compliant	1000	300 $2.832 1000 $2.64
IRG4BC30KDPBF DISTI #IRG4BC30KDPBF	Infineon Technologies AG	600V 28A 100W TO220AB RoHS: Compliant	250	10 $1.78 50 $1.48 100 $1.38 200 $1.33

IRG4BC3~~(55)~~
IRG4BC~~(110)~~
IRG4B~~(110)~~
IRG4~~(110)~~
IRG~~(110)~~

Infineon Technologies IRG4BC30KDPBF

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