Infineon Technologies IRG4BC10SD-L
- Part Number:
- IRG4BC10SD-L
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587362-IRG4BC10SD-L
- Description:
- IGBT 600V 14A 38W TO262
- ECAD Model:
-
- Datasheet:
- IRG4BC10SD-L
Infineon Technologies IRG4BC10SD-L technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC10SD-L.
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2001
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Input TypeStandard
- Power - Max38W
- Reverse Recovery Time28ns
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)14A
- Test Condition480V, 8A, 100 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 8A
- Gate Charge15nC
- Current - Collector Pulsed (Icm)18A
- Td (on/off) @ 25°C76ns/815ns
- Switching Energy310μJ (on), 3.28mJ (off)
- RoHS StatusNon-RoHS Compliant
IRG4BC10SD-L Description
IRG4BC10SD-L is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for specific application conditions. As a Generation 4 IGBT, it is able to offer the highest efficiencies available, and lower losses than MOSFET's conduction and diode losses. This IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Its HEXFRED diodes are optimized for performance with IGBTs.
IRG4BC10SD-L Features
Industry-standard D2Pak & TO-262 packages Extremely low voltage drop 1.1Vtyp. @ 2A Extremely tight Vce(on) distribution Minimizes power dissipation at up to 3 kHz PWM frequency in inverter drives, up to 4 kHz in brushless DC drives Highest efficiencies available
IRG4BC10SD-L Applications
Industrial motor drive Solar inverters Welding
IRG4BC10SD-L is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for specific application conditions. As a Generation 4 IGBT, it is able to offer the highest efficiencies available, and lower losses than MOSFET's conduction and diode losses. This IGBT is co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. Its HEXFRED diodes are optimized for performance with IGBTs.
IRG4BC10SD-L Features
Industry-standard D2Pak & TO-262 packages Extremely low voltage drop 1.1Vtyp. @ 2A Extremely tight Vce(on) distribution Minimizes power dissipation at up to 3 kHz PWM frequency in inverter drives, up to 4 kHz in brushless DC drives Highest efficiencies available
IRG4BC10SD-L Applications
Industrial motor drive Solar inverters Welding
IRG4BC10SD-L More Descriptions
IGBT 600V 14A 38W TO262
The three parts on the right have similar specifications to IRG4BC10SD-L.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Input TypePower - MaxReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Test ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeTurn On TimeTurn Off Time-Nom (toff)ECCN CodeSubcategoryPower Dissipation-Max (Abs)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)View Compare
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IRG4BC10SD-LThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~150°C TJTube2001Obsolete1 (Unlimited)Standard38W28ns600V14A480V, 8A, 100 Ω, 15V1.8V @ 15V, 8A15nC18A76ns/815ns310μJ (on), 3.28mJ (off)Non-RoHS Compliant------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)Standard49W28ns600V14A480V, 7.8A, 75 Ω, 15V2.4V @ 15V, 7.8A23nC42A17ns/160ns240μJ (on), 260μJ (off)Non-RoHS CompliantYESSILICONe32MATTE TINSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORPOWER CONTROLN-CHANNEL37 ns400 ns------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)Standard60W37ns600V16A480V, 9A, 50 Ω, 15V2V @ 15V, 9A27nC64A43ns/240ns250μJ (on), 640μJ (off)Non-RoHS CompliantYESSILICONe32MATTE TIN OVER NICKELSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORPOWER CONTROLN-CHANNEL63 ns610 ns------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~150°C TJTube2000Obsolete1 (Unlimited)Standard100W-600V34A480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A50nC68A22ns/540ns260μJ (on), 3.45mJ (off)Non-RoHS CompliantYESSILICONe32Matte Tin (Sn) - with Nickel (Ni) barrierSINGLEGULL WING26030R-PSSO-G2-1SINGLECOLLECTORPOWER CONTROLN-CHANNEL40 ns1550 nsEAR99Insulated Gate BIP Transistors100W20V6V590ns
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