Infineon Technologies IRG4BC15UD
- Part Number:
- IRG4BC15UD
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3554931-IRG4BC15UD
- Description:
- IGBT 600V 14A 49W TO220AB
- Datasheet:
- IRG4BC15UD
Infineon Technologies IRG4BC15UD technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC15UD.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2001
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureULTRA FAST SOFT RECOVERY
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max49W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time28ns
- JEDEC-95 CodeTO-220AB
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)14A
- Turn On Time37 ns
- Test Condition480V, 7.8A, 75 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 7.8A
- Turn Off Time-Nom (toff)400 ns
- Gate Charge23nC
- Current - Collector Pulsed (Icm)42A
- Td (on/off) @ 25°C17ns/160ns
- Switching Energy240μJ (on), 260μJ (off)
- RoHS StatusNon-RoHS Compliant
IRG4BC15UD Description
IRG4BC15UD is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies that is optimized for high frequencies from10 to 30 kHz in hard switching. IGBT IRG4BC15UD is co-packaged with ultra-soft-recovery antiparallel diodes to reduce noise, EMI, and switching losses.
IRG4BC15UD Features
High noise immune
Ultrafast soft recovery diode
Compatible with high voltage gate driver IC's
Single package switch for bridge circuit applications
Available in the industry-standard TO-220AB package
IRG4BC15UD Applications
Industrial applications
Appliance applications
IRG4BC15UD is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies that is optimized for high frequencies from10 to 30 kHz in hard switching. IGBT IRG4BC15UD is co-packaged with ultra-soft-recovery antiparallel diodes to reduce noise, EMI, and switching losses.
IRG4BC15UD Features
High noise immune
Ultrafast soft recovery diode
Compatible with high voltage gate driver IC's
Single package switch for bridge circuit applications
Available in the industry-standard TO-220AB package
IRG4BC15UD Applications
Industrial applications
Appliance applications
The three parts on the right have similar specifications to IRG4BC15UD.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeReverse Recovery TimeJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusJESD-609 CodeTerminal FinishTerminal FormFactory Lead TimeMountNumber of PinsPbfree CodeECCN CodeMax Power DissipationBase Part NumberElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageRadiation HardeningSubcategoryPower Dissipation-Max (Abs)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)View Compare
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IRG4BC15UDThrough HoleTO-220-3NOSILICON-55°C~150°C TJTube2001Obsolete1 (Unlimited)3ULTRA FAST SOFT RECOVERYSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard49WPOWER CONTROLN-CHANNEL28nsTO-220AB600V14A37 ns480V, 7.8A, 75 Ω, 15V2.4V @ 15V, 7.8A400 ns23nC42A17ns/160ns240μJ (on), 260μJ (off)Non-RoHS Compliant----------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~150°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)2-SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard49WPOWER CONTROLN-CHANNEL28ns-600V14A37 ns480V, 7.8A, 75 Ω, 15V2.4V @ 15V, 7.8A400 ns23nC42A17ns/160ns240μJ (on), 260μJ (off)Non-RoHS Compliante3MATTE TINGULL WING------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)2----R-PSSO-G2-1-COLLECTORStandard100WPOWER CONTROLN-CHANNEL----40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)RoHS Compliant--GULL WING11 WeeksSurface Mount3yesEAR99100WIRG4BC30S-SPBFSingle1.6V34A600V600VNo-----
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~150°C TJTube2000Obsolete1 (Unlimited)2-SINGLE26030R-PSSO-G2-1SINGLECOLLECTORStandard100WPOWER CONTROLN-CHANNEL--600V34A40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)Non-RoHS Compliante3Matte Tin (Sn) - with Nickel (Ni) barrierGULL WING----EAR99--------Insulated Gate BIP Transistors100W20V6V590ns
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