Infineon Technologies IRG4BC20FD-STRR

Name: IRG4BC20FD-STRR
Brand: Infineon Technologies
SKU: 3554845-IRG4BC20FD-STRR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRG4BC20FD-STRR

Manufacturer:: Infineon Technologies

Ventron No:: 3554845-IRG4BC20FD-STRR

Description:: IGBT 600V 16A 60W D2PAK

ECAD Model:

Datasheet:: IRG4BC20FD-STRR

Specifications

Infineon Technologies IRG4BC20FD-STRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC20FD-STRR.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
60W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
37ns
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
16A
Turn On Time
63 ns
Test Condition
480V, 9A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 9A
Turn Off Time-Nom (toff)
610 ns
Gate Charge
27nC
Current - Collector Pulsed (Icm)
64A
Td (on/off) @ 25°C
43ns/240ns
Switching Energy
250μJ (on), 640μJ (off)
RoHS Status
Non-RoHS Compliant

Description

IRG4BC20FD-STRR Benefits Generation 4 IGBTs offer the highest efficiencies available IGBTs optimized for specific application conditions HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs

IRG4BC20FD-STRR Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry-standard D2Pak package

IRG4BC20FD-STRR More Descriptions

IGBT 600V 16A 60W D2PAK

Product Comparison

The three parts on the right have similar specifications to IRG4BC20FD-STRR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

ECCN Code

Subcategory

Power Dissipation-Max (Abs)

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Additional Feature

JEDEC-95 Code

View Compare
IRG4BC20FD-STRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2000

e3

Obsolete

1 (Unlimited)

2

MATTE TIN OVER NICKEL

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

COLLECTOR

Standard

60W

POWER CONTROL

N-CHANNEL

37ns

600V

16A

63 ns

480V, 9A, 50 Ω, 15V

2V @ 15V, 9A

610 ns

27nC

64A

43ns/240ns

250μJ (on), 640μJ (off)

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-
IRG4BC10SD-L

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Tube

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

Standard

38W

-

-

28ns

600V

14A

-

480V, 8A, 100 Ω, 15V

1.8V @ 15V, 8A

-

15nC

18A

76ns/815ns

310μJ (on), 3.28mJ (off)

Non-RoHS Compliant

-

-

-

-

-

-

-

-

IRG4BC20FD-STRR vs IRG4BC10SD-L
IRG4BC30S-S

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~150°C TJ

Tube

2000

e3

Obsolete

1 (Unlimited)

2

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

GULL WING

260

30

R-PSSO-G2

-

1

SINGLE

COLLECTOR

Standard

100W

POWER CONTROL

N-CHANNEL

-

600V

34A

40 ns

480V, 18A, 23 Ω, 15V

1.6V @ 15V, 18A

1550 ns

50nC

68A

22ns/540ns

260μJ (on), 3.45mJ (off)

Non-RoHS Compliant

EAR99

Insulated Gate BIP Transistors

100W

20V

6V

590ns

-

-

IRG4BC20FD-STRR vs IRG4BC30S-S
IRG4BC20FD

Infineon Technologies

Through Hole

TO-220-3

NO

SILICON

-55°C~150°C TJ

Tube

2000

-

Obsolete

1 (Unlimited)

3

-

SINGLE

-

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

COLLECTOR

Standard

60W

POWER CONTROL

N-CHANNEL

37ns

600V

16A

63 ns

480V, 9A, 50 Ω, 15V

2V @ 15V, 9A

610 ns

27nC

64A

43ns/240ns

250μJ (on), 640μJ (off)

Non-RoHS Compliant

-

-

-

-

-

-

ULTRA FAST SOFT RECOVERY

TO-220AB

IRG4BC20FD-STRR vs IRG4BC20FD