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IRG4BC20FD

Infineon Technologies IRG4BC20FD

Part Number:
IRG4BC20FD
Manufacturer:
Infineon Technologies
Ventron No:
3072186-IRG4BC20FD
Description:
IGBT 600V 16A 60W TO220AB
ECAD Model:
Datasheet:
IRG4BC20FD

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Specifications
Infineon Technologies IRG4BC20FD technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC20FD.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Additional Feature
    ULTRA FAST SOFT RECOVERY
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    60W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Reverse Recovery Time
    37ns
  • JEDEC-95 Code
    TO-220AB
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    16A
  • Turn On Time
    63 ns
  • Test Condition
    480V, 9A, 50 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 9A
  • Turn Off Time-Nom (toff)
    610 ns
  • Gate Charge
    27nC
  • Current - Collector Pulsed (Icm)
    64A
  • Td (on/off) @ 25°C
    43ns/240ns
  • Switching Energy
    250μJ (on), 640μJ (off)
  • RoHS Status
    Non-RoHS Compliant
Description
IRG4BC20FD Description
The IRG4BC20FDPBF is an Insulated Gate Bipolar Transistor with an ultrafast soft recovery diode. It is optimized for medium operating frequencies (1 to 5kHz in hard switching, >20kHz in resonant mode). It features a generation 4 IGBT design that provides tighter parameter distribution and higher efficiency than generation 3. The IGBT IRG4BC20FDPBF is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED? diodes are optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.

IRG4BC20FD Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency   than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry-standard TO-220AB package
Lead-Free
IRG4BC20FD Applications
HVAC
Lighting
Consumer Electronics
telephones
televisions
calculators
Power Management
Product Comparison
The three parts on the right have similar specifications to IRG4BC20FD.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Reverse Recovery Time
    JEDEC-95 Code
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    JESD-609 Code
    Terminal Finish
    Terminal Form
    Factory Lead Time
    Mount
    Number of Pins
    Pbfree Code
    ECCN Code
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Radiation Hardening
    View Compare
  • IRG4BC20FD
    IRG4BC20FD
    Infineon Technologies
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    ULTRA FAST SOFT RECOVERY
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    60W
    POWER CONTROL
    N-CHANNEL
    37ns
    TO-220AB
    600V
    16A
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD-STRL
    IRG4BC15UD-STRL
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    Obsolete
    1 (Unlimited)
    2
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    49W
    POWER CONTROL
    N-CHANNEL
    28ns
    -
    600V
    14A
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    Non-RoHS Compliant
    e3
    MATTE TIN
    GULL WING
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRG4BC20FD vs IRG4BC15UD-STRL
  • IRG4BC30S-STRLP
    IRG4BC30S-STRLP
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    R-PSSO-G2
    -
    1
    -
    COLLECTOR
    Standard
    100W
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    RoHS Compliant
    -
    -
    GULL WING
    11 Weeks
    Surface Mount
    3
    yes
    EAR99
    100W
    IRG4BC30S-SPBF
    Single
    1.6V
    34A
    600V
    600V
    No
    IRG4BC20FD vs IRG4BC30S-STRLP
  • IRG4BC15UD
    IRG4BC15UD
    Infineon Technologies
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    2001
    Obsolete
    1 (Unlimited)
    3
    ULTRA FAST SOFT RECOVERY
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    49W
    POWER CONTROL
    N-CHANNEL
    28ns
    TO-220AB
    600V
    14A
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRG4BC20FD vs IRG4BC15UD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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