Infineon Technologies IRG4BC15UD-STRL
- Part Number:
- IRG4BC15UD-STRL
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587325-IRG4BC15UD-STRL
- Description:
- IGBT 600V 14A 49W D2PAK
- Datasheet:
- IRG4BC15UD-STRL
Infineon Technologies IRG4BC15UD-STRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC15UD-STRL.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max49W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time28ns
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)14A
- Turn On Time37 ns
- Test Condition480V, 7.8A, 75 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 7.8A
- Turn Off Time-Nom (toff)400 ns
- Gate Charge23nC
- Current - Collector Pulsed (Icm)42A
- Td (on/off) @ 25°C17ns/160ns
- Switching Energy240μJ (on), 260μJ (off)
- RoHS StatusNon-RoHS Compliant
IRG4BC15UD-STRL Description
As is a type of insulated gate bipolar transistor co-packaged with an ultrafast soft recovery diode, IRG4BC15UD-STRL is specifically designed to provide the best value for appliance and industrial applications. It is optimized for high frequencies from10 to 30 kHz in hard switching. It is embedded in the industry standard D2Pak package for the purpose of saving board space. The IRG4BC15UD-STRL IGBT requires little or no snubbing to ensure a low EMI design.
IRG4BC15UD-STRL Features
Industry-standard D2Pak package Compatible with high voltage Gate Driver IC's Allows simpler gate drive Ultra-soft-recovery antiparallel diode
IRG4BC15UD-STRL Applications
Bridge circuit applications Appliance and industrial applications
As is a type of insulated gate bipolar transistor co-packaged with an ultrafast soft recovery diode, IRG4BC15UD-STRL is specifically designed to provide the best value for appliance and industrial applications. It is optimized for high frequencies from10 to 30 kHz in hard switching. It is embedded in the industry standard D2Pak package for the purpose of saving board space. The IRG4BC15UD-STRL IGBT requires little or no snubbing to ensure a low EMI design.
IRG4BC15UD-STRL Features
Industry-standard D2Pak package Compatible with high voltage Gate Driver IC's Allows simpler gate drive Ultra-soft-recovery antiparallel diode
IRG4BC15UD-STRL Applications
Bridge circuit applications Appliance and industrial applications
IRG4BC15UD-STRL More Descriptions
IGBT 600V 14A 49W D2PAK
The three parts on the right have similar specifications to IRG4BC15UD-STRL.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusECCN CodeSubcategoryPower Dissipation-Max (Abs)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)Supplier Device PackageAdditional FeatureJEDEC-95 CodeView Compare
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IRG4BC15UD-STRLSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~150°C TJTape & Reel (TR)2001e3Obsolete1 (Unlimited)2MATTE TINSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard49WPOWER CONTROLN-CHANNEL28ns600V14A37 ns480V, 7.8A, 75 Ω, 15V2.4V @ 15V, 7.8A400 ns23nC42A17ns/160ns240μJ (on), 260μJ (off)Non-RoHS Compliant----------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~150°C TJTube2000e3Obsolete1 (Unlimited)2Matte Tin (Sn) - with Nickel (Ni) barrierSINGLEGULL WING26030R-PSSO-G2-1SINGLECOLLECTORStandard100WPOWER CONTROLN-CHANNEL-600V34A40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)Non-RoHS CompliantEAR99Insulated Gate BIP Transistors100W20V6V590ns---
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTube2000-Obsolete1 (Unlimited)-----------Standard60W---600V16A-480V, 9A, 50Ohm, 15V2.8V @ 15V, 9A-34nC32A28ns/150ns150μJ (on), 250μJ (off)Non-RoHS Compliant------D2PAK--
-
Through HoleTO-220-3NOSILICON-55°C~150°C TJTube2000-Obsolete1 (Unlimited)3-SINGLE-NOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODECOLLECTORStandard60WPOWER CONTROLN-CHANNEL37ns600V16A63 ns480V, 9A, 50 Ω, 15V2V @ 15V, 9A610 ns27nC64A43ns/240ns250μJ (on), 640μJ (off)Non-RoHS Compliant-------ULTRA FAST SOFT RECOVERYTO-220AB
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