Infineon Technologies IRG4BC30S-S
- Part Number:
- IRG4BC30S-S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3073893-IRG4BC30S-S
- Description:
- IGBT 600V 34A 100W D2PAK
- Datasheet:
- IRG4BC30S-S
Infineon Technologies IRG4BC30S-S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC30S-S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2000
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryInsulated Gate BIP Transistors
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max100W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)34A
- Power Dissipation-Max (Abs)100W
- Turn On Time40 ns
- Test Condition480V, 18A, 23 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.6V @ 15V, 18A
- Turn Off Time-Nom (toff)1550 ns
- Gate Charge50nC
- Current - Collector Pulsed (Icm)68A
- Td (on/off) @ 25°C22ns/540ns
- Switching Energy260μJ (on), 3.45mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- Fall Time-Max (tf)590ns
- RoHS StatusNon-RoHS Compliant
IRG4BC30S-S Description
The IRG4BC30S-S is a Standard Speed IGBT optimized for specified application conditions.
IRG4BC30S-S Features
Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz)
Generation 4 IGBT design provides tight parameter distribution and high efficiency
IRG4BC30S-S Applications
General Uses
The IRG4BC30S-S is a Standard Speed IGBT optimized for specified application conditions.
IRG4BC30S-S Features
Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz)
Generation 4 IGBT design provides tight parameter distribution and high efficiency
IRG4BC30S-S Applications
General Uses
IRG4BC30S-S More Descriptions
Trans IGBT Chip N-CH 600V 34A 3-Pin(2 Tab) D2PAK
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:34A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:100W; Package/Case:D2-PAK ;RoHS Compliant: No
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:34A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:100W; Package/Case:D2-PAK ;RoHS Compliant: No
The three parts on the right have similar specifications to IRG4BC30S-S.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Turn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)RoHS StatusFactory Lead TimeMountNumber of PinsAdditional FeatureVoltage - Rated DCMax Power DissipationCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageHeightLengthWidthREACH SVHCRadiation HardeningLead FreeSupplier Device PackageQualification StatusReverse Recovery TimeJEDEC-95 CodeView Compare
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IRG4BC30S-SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~150°C TJTube2000e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierInsulated Gate BIP TransistorsSINGLEGULL WING26030R-PSSO-G21SINGLECOLLECTORStandard100WPOWER CONTROLN-CHANNEL600V34A100W40 ns480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A1550 ns50nC68A22ns/540ns260μJ (on), 3.45mJ (off)20V6V590nsNon-RoHS Compliant---------------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTube2004e3Last Time Buy1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierInsulated Gate BIP TransistorsSINGLEGULL WING26030R-PSSO-G21-COLLECTORStandard-POWER CONTROLN-CHANNEL---48 ns480V, 20A, 10 Ω, 15V2.5V @ 15V, 20A294 ns98nC160A27ns/100ns110μJ (on), 230μJ (off)20V6V110nsROHS3 Compliant8 WeeksSurface Mount, Through Hole3LOW CONDUCTION LOSS600V160W40ADual160W27 ns23ns100 ns2.5V40A600V2.05V4.83mm10.668mm4.826mmNo SVHCNoLead Free----
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTube2000-Obsolete1 (Unlimited)------------Standard60W--600V16A--480V, 9A, 50Ohm, 15V2.8V @ 15V, 9A-34nC32A28ns/150ns150μJ (on), 250μJ (off)---Non-RoHS Compliant----------------------D2PAK---
-
Through HoleTO-220-3NOSILICON-55°C~150°C TJTube2000-Obsolete1 (Unlimited)3---SINGLE-NOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODECOLLECTORStandard60WPOWER CONTROLN-CHANNEL600V16A-63 ns480V, 9A, 50 Ω, 15V2V @ 15V, 9A610 ns27nC64A43ns/240ns250μJ (on), 640μJ (off)---Non-RoHS Compliant---ULTRA FAST SOFT RECOVERY-------------------Not Qualified37nsTO-220AB
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