IRG4BC30S-S

Infineon Technologies IRG4BC30S-S

Part Number:
IRG4BC30S-S
Manufacturer:
Infineon Technologies
Ventron No:
3073893-IRG4BC30S-S
Description:
IGBT 600V 34A 100W D2PAK
ECAD Model:
Datasheet:
IRG4BC30S-S

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Specifications
Infineon Technologies IRG4BC30S-S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC30S-S.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    Insulated Gate BIP Transistors
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    100W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Current - Collector (Ic) (Max)
    34A
  • Power Dissipation-Max (Abs)
    100W
  • Turn On Time
    40 ns
  • Test Condition
    480V, 18A, 23 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.6V @ 15V, 18A
  • Turn Off Time-Nom (toff)
    1550 ns
  • Gate Charge
    50nC
  • Current - Collector Pulsed (Icm)
    68A
  • Td (on/off) @ 25°C
    22ns/540ns
  • Switching Energy
    260μJ (on), 3.45mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Fall Time-Max (tf)
    590ns
  • RoHS Status
    Non-RoHS Compliant
Description
IRG4BC30S-S Description
The IRG4BC30S-S is a Standard Speed IGBT optimized for specified application conditions.

IRG4BC30S-S Features
Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz)
Generation 4 IGBT design provides tight parameter distribution and high efficiency

IRG4BC30S-S Applications
General Uses

IRG4BC30S-S More Descriptions
Trans IGBT Chip N-CH 600V 34A 3-Pin(2 Tab) D2PAK
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:34A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:100W; Package/Case:D2-PAK ;RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to IRG4BC30S-S.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Factory Lead Time
    Mount
    Number of Pins
    Additional Feature
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Supplier Device Package
    Qualification Status
    Reverse Recovery Time
    JEDEC-95 Code
    View Compare
  • IRG4BC30S-S
    IRG4BC30S-S
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Insulated Gate BIP Transistors
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    1
    SINGLE
    COLLECTOR
    Standard
    100W
    POWER CONTROL
    N-CHANNEL
    600V
    34A
    100W
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    20V
    6V
    590ns
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC40W-SPBF
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    Last Time Buy
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    Insulated Gate BIP Transistors
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    1
    -
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    20V
    6V
    110ns
    ROHS3 Compliant
    8 Weeks
    Surface Mount, Through Hole
    3
    LOW CONDUCTION LOSS
    600V
    160W
    40A
    Dual
    160W
    27 ns
    23ns
    100 ns
    2.5V
    40A
    600V
    2.05V
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
  • IRG4BC20K-S
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    60W
    -
    -
    600V
    16A
    -
    -
    480V, 9A, 50Ohm, 15V
    2.8V @ 15V, 9A
    -
    34nC
    32A
    28ns/150ns
    150μJ (on), 250μJ (off)
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D2PAK
    -
    -
    -
  • IRG4BC20FD
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    SINGLE
    -
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    Standard
    60W
    POWER CONTROL
    N-CHANNEL
    600V
    16A
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    ULTRA FAST SOFT RECOVERY
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Not Qualified
    37ns
    TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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