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IRG4BC30S-STRLP

Infineon Technologies IRG4BC30S-STRLP

Part Number:
IRG4BC30S-STRLP
Manufacturer:
Infineon Technologies
Ventron No:
3587247-IRG4BC30S-STRLP
Description:
IGBT 600V 34A 100W D2PAK
ECAD Model:
Datasheet:
IRG4BC30S-STRLP

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Specifications
Infineon Technologies IRG4BC30S-STRLP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC30S-STRLP.
  • Factory Lead Time
    11 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2000
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Power Dissipation
    100W
  • Terminal Form
    GULL WING
  • Base Part Number
    IRG4BC30S-SPBF
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    100W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.6V
  • Max Collector Current
    34A
  • Collector Emitter Breakdown Voltage
    600V
  • Max Breakdown Voltage
    600V
  • Turn On Time
    40 ns
  • Test Condition
    480V, 18A, 23 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.6V @ 15V, 18A
  • Turn Off Time-Nom (toff)
    1550 ns
  • Gate Charge
    50nC
  • Current - Collector Pulsed (Icm)
    68A
  • Td (on/off) @ 25°C
    22ns/540ns
  • Switching Energy
    260μJ (on), 3.45mJ (off)
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRG4BC30S-STRLP Description
IRG4BC30S-STRLP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is optimized for minimum saturation voltage and low operating frequencies (< 1kHz). As a Generation 4 IGBT,  it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4BC30S-STRLP IGBT is supplied in the D2Pak package for the purpose of saving board space.

IRG4BC30S-STRLP Features
Industry-standard D2Pak packages Extremely tight Vce(on) distribution Tighter parameter distribution Highest efficiencies available

IRG4BC30S-STRLP Applications
Industrial motor drive Solar inverters Welding 
IRG4BC30S-STRLP More Descriptions
Trans IGBT Chip N-CH 600V 34A 3-Pin(2 Tab) D2PAK - Tape and Reel
IGBT Modules 600V DC-1 KHZ (STD) DISCRETE IGBT
FIXED IND 18NH 160MA 2.28 OHM
Product Comparison
The three parts on the right have similar specifications to IRG4BC30S-STRLP.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Power Dissipation
    Terminal Form
    Base Part Number
    JESD-30 Code
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Radiation Hardening
    RoHS Status
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Configuration
    Reverse Recovery Time
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Additional Feature
    JEDEC-95 Code
    Subcategory
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Turn-Off Delay Time
    Collector Emitter Saturation Voltage
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Lead Free
    View Compare
  • IRG4BC30S-STRLP
    IRG4BC30S-STRLP
    Infineon Technologies
    11 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    yes
    Obsolete
    1 (Unlimited)
    2
    EAR99
    100W
    GULL WING
    IRG4BC30S-SPBF
    R-PSSO-G2
    1
    Single
    COLLECTOR
    Standard
    100W
    POWER CONTROL
    N-CHANNEL
    1.6V
    34A
    600V
    600V
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC15UD-STRL
    IRG4BC15UD-STRL
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2001
    -
    Obsolete
    1 (Unlimited)
    2
    -
    -
    GULL WING
    -
    R-PSSO-G2
    1
    -
    COLLECTOR
    Standard
    49W
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    Non-RoHS Compliant
    YES
    e3
    MATTE TIN
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    28ns
    600V
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRG4BC30S-STRLP vs IRG4BC15UD-STRL
  • IRG4BC15UD
    IRG4BC15UD
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2001
    -
    Obsolete
    1 (Unlimited)
    3
    -
    -
    -
    -
    R-PSFM-T3
    1
    -
    COLLECTOR
    Standard
    49W
    POWER CONTROL
    N-CHANNEL
    -
    -
    -
    -
    37 ns
    480V, 7.8A, 75 Ω, 15V
    2.4V @ 15V, 7.8A
    400 ns
    23nC
    42A
    17ns/160ns
    240μJ (on), 260μJ (off)
    -
    Non-RoHS Compliant
    NO
    -
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    28ns
    600V
    14A
    ULTRA FAST SOFT RECOVERY
    TO-220AB
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRG4BC30S-STRLP vs IRG4BC15UD
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    8 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    -
    Last Time Buy
    1 (Unlimited)
    2
    EAR99
    160W
    GULL WING
    -
    R-PSSO-G2
    1
    Dual
    COLLECTOR
    Standard
    -
    POWER CONTROL
    N-CHANNEL
    2.5V
    40A
    600V
    -
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    No
    ROHS3 Compliant
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    260
    30
    -
    -
    -
    -
    -
    LOW CONDUCTION LOSS
    -
    Insulated Gate BIP Transistors
    600V
    40A
    160W
    27 ns
    23ns
    100 ns
    2.05V
    20V
    6V
    110ns
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    Lead Free
    IRG4BC30S-STRLP vs IRG4BC40W-SPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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