Infineon Technologies IRG4BC20K-S
- Part Number:
- IRG4BC20K-S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3072218-IRG4BC20K-S
- Description:
- IGBT 600V 16A 60W D2PAK
- Datasheet:
- IRG4BC20K-S
Infineon Technologies IRG4BC20K-S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC20K-S.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2000
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Input TypeStandard
- Power - Max60W
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)16A
- Test Condition480V, 9A, 50Ohm, 15V
- Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 9A
- Gate Charge34nC
- Current - Collector Pulsed (Icm)32A
- Td (on/off) @ 25°C28ns/150ns
- Switching Energy150μJ (on), 250μJ (off)
- RoHS StatusNon-RoHS Compliant
IRG4BC20K-S Description
IRG4BC20K-S is a 600V insulated gate bipolar transistor. As a Freewheeling Diode, we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT. The latest generation 4 IGBTs offer the highest power density motor controls possible. The Operating and Storage Temperature Range is between -55 and 150℃. And the Switch IRG4BC20K-S is in the TO-220A package with 60W power dissipation.
IRG4BC20K-S Features
High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with a high switching speed The latest generation design provides tighter parameter distribution and higher efficiency than the previous generation Continuous Collector Current: 16A Short Circuit Withstand Time: 10μs Gate-to-Emitter Voltage: ±20V
IRG4BC20K-S Applications
Automotive Advanced driver assistance systems (ADAS) Enterprise systems Enterprise projectors Personal electronics Home theater & entertainment
IRG4BC20K-S is a 600V insulated gate bipolar transistor. As a Freewheeling Diode, we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT. The latest generation 4 IGBTs offer the highest power density motor controls possible. The Operating and Storage Temperature Range is between -55 and 150℃. And the Switch IRG4BC20K-S is in the TO-220A package with 60W power dissipation.
IRG4BC20K-S Features
High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with a high switching speed The latest generation design provides tighter parameter distribution and higher efficiency than the previous generation Continuous Collector Current: 16A Short Circuit Withstand Time: 10μs Gate-to-Emitter Voltage: ±20V
IRG4BC20K-S Applications
Automotive Advanced driver assistance systems (ADAS) Enterprise systems Enterprise projectors Personal electronics Home theater & entertainment
IRG4BC20K-S More Descriptions
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
IGBT 600V 16A 60W D2PAK
IGBT, D2-PAK; Transistor type:IGBT; Current, Ic continuous a max:16A; Voltage, Vce sat max:2.8V; Power dissipation:60W; Case style:TO-263 (D2-Pak); Current, Icm pulsed:32A; Power, Pd:60W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Time, fall max:150ns; Time, rise:27ns; Time, short circuit withstand min:10µs; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:600V
IGBT 600V 16A 60W D2PAK
IGBT, D2-PAK; Transistor type:IGBT; Current, Ic continuous a max:16A; Voltage, Vce sat max:2.8V; Power dissipation:60W; Case style:TO-263 (D2-Pak); Current, Icm pulsed:32A; Power, Pd:60W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Time, fall max:150ns; Time, rise:27ns; Time, short circuit withstand min:10µs; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:600V
The three parts on the right have similar specifications to IRG4BC20K-S.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Input TypePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Test ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusFactory Lead TimeMountNumber of PinsTransistor Element MaterialPbfree CodeNumber of TerminationsECCN CodeMax Power DissipationTerminal FormBase Part NumberJESD-30 CodeNumber of ElementsElement ConfigurationCase ConnectionTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageTurn On TimeTurn Off Time-Nom (toff)Radiation HardeningSurface MountJESD-609 CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusConfigurationReverse Recovery TimeAdditional FeatureSubcategoryVoltage - Rated DCCurrent RatingPower DissipationTurn On Delay TimeRise TimeTurn-Off Delay TimeCollector Emitter Saturation VoltageGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCLead FreeView Compare
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IRG4BC20K-SSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~150°C TJTube2000Obsolete1 (Unlimited)Standard60W600V16A480V, 9A, 50Ohm, 15V2.8V @ 15V, 9A34nC32A28ns/150ns150μJ (on), 250μJ (off)Non-RoHS Compliant--------------------------------------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)Standard100W--480V, 18A, 23 Ω, 15V1.6V @ 15V, 18A50nC68A22ns/540ns260μJ (on), 3.45mJ (off)RoHS Compliant11 WeeksSurface Mount3SILICONyes2EAR99100WGULL WINGIRG4BC30S-SPBFR-PSSO-G21SingleCOLLECTORPOWER CONTROLN-CHANNEL1.6V34A600V600V40 ns1550 nsNo--------------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)Standard60W600V16A480V, 9A, 50 Ω, 15V2V @ 15V, 9A27nC64A43ns/240ns250μJ (on), 640μJ (off)Non-RoHS Compliant---SILICON-2--GULL WING-R-PSSO-G21-COLLECTORPOWER CONTROLN-CHANNEL----63 ns610 ns-YESe3MATTE TIN OVER NICKELSINGLE26030Not QualifiedSINGLE WITH BUILT-IN DIODE37ns-----------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~150°C TJTube2004Last Time Buy1 (Unlimited)Standard---480V, 20A, 10 Ω, 15V2.5V @ 15V, 20A98nC160A27ns/100ns110μJ (on), 230μJ (off)ROHS3 Compliant8 WeeksSurface Mount, Through Hole3SILICON-2EAR99160WGULL WING-R-PSSO-G21DualCOLLECTORPOWER CONTROLN-CHANNEL2.5V40A600V-48 ns294 nsNo-e3Matte Tin (Sn) - with Nickel (Ni) barrierSINGLE26030---LOW CONDUCTION LOSSInsulated Gate BIP Transistors600V40A160W27 ns23ns100 ns2.05V20V6V110ns4.83mm10.668mm4.826mmNo SVHCLead Free
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