Infineon Technologies IRFR9N20DTRLPBF

Name: IRFR9N20DTRLPBF
Brand: Infineon Technologies
SKU: 2850937-IRFR9N20DTRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR9N20DTRLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2850937-IRFR9N20DTRLPBF

Description:: MOSFET N-CH 200V 9.4A DPAK

ECAD Model:

Datasheet:: IRFR9N20DTRLPBF

Specifications

Infineon Technologies IRFR9N20DTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR9N20DTRLPBF.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2000
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
86W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
380m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
560pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9.4A Tc
Gate Charge (Qg) (Max) @ Vgs
27nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
9.4A
Drain-source On Resistance-Max
0.38Ohm
Pulsed Drain Current-Max (IDM)
38A
DS Breakdown Voltage-Min
200V
Avalanche Energy Rating (Eas)
100 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR9N20DTRLPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 560pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 9.4A.There is a peak drain current of 38A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFR9N20DTRLPBF Features
the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 38A.
a 200V drain to source voltage (Vdss)

IRFR9N20DTRLPBF Applications
There are a lot of Infineon Technologies
IRFR9N20DTRLPBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRFR9N20DTRLPBF More Descriptions

Single N-Channel 200 V 0.38 Ohm 18 nC HEXFET® Power Mosfet - TO-252AA
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):380mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Product Comparison

The three parts on the right have similar specifications to IRFR9N20DTRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Continuous Drain Current (ID)

View Compare
IRFR9N20DTRLPBF

Infineon Technologies

12 Weeks

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Not For New Designs

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

380m Ω @ 5.6A, 10V

5.5V @ 250μA

560pF @ 25V

9.4A Tc

27nC @ 10V

200V

10V

±30V

TO-252AA

9.4A

0.38Ohm

38A

200V

100 mJ

ROHS3 Compliant

-

-

-
IRFR120NCTRLPBF

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

48W Tc

-

-

N-Channel

-

210m Ω @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Ta

25nC @ 10V

100V

10V

±20V

-

-

-

-

-

-

-

-

-

IRFR9N20DTRLPBF vs IRFR120NCTRLPBF
IRFR12N25DTRPBF

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

-

-

IRFR9N20DTRLPBF vs IRFR12N25DTRPBF
IRFR010TRR

Vishay Siliconix

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Active

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

25W Tc

-

-

N-Channel

-

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

50V

10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

8.2A

IRFR9N20DTRLPBF vs IRFR010TRR

Certification

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IRFR9N2~~(7)~~
IRFR9N~~(7)~~
IRFR9~~(64)~~
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IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRFR9N20DTRLPBF DISTI #IRFR9N20DTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.4A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	6000	3000 $0.3994
IRFR9N20DTRLPBF DISTI #IRFR9N20DTRLPBF	Infineon Technologies AG	MOSFET N-CH 200V 9.4A DPAK RoHS: Compliant	0	3000 $0.48125
IRFR9N20DTRLPBF DISTI #IRFR9N20DTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.4A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	6000	3000 $0.517
IRFR9N20DTRLPBF DISTI #IRFR9N20DTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.4A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0
IRFR9N20DTRLPBF DISTI #IRFR9N20DTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.4A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0	3000 $0.3599 6000 $0.3469 12000 $0.3339 18000 $0.3229 30000 $0.3169
IRFR9N20DTRLPBF DISTI #IRFR9N20DTRLPBF	Infineon Technologies AG	MOSFET, 200V, 9.4A, 380 MOHM, 18 NC QG, D-PAK RoHS: Compliant	0	3000 $1.31 6000 $1.284 15000 $1.245 30000 $1.192 75000 $1.114
IRFR9N20DTRLPBF DISTI #IRFR9N20DTRLPBF	Infineon Technologies AG	MOSFET MOSFT 200V 9.4A 380mOhm 18nC RoHS: Compliant	1410	1 $1.03 10 $0.875 100 $0.672 500 $0.594 1000 $0.469

Infineon Technologies IRFR9N20DTRLPBF

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