IRFR9310

Vishay Siliconix IRFR9310

Part Number:
IRFR9310
Manufacturer:
Vishay Siliconix
Ventron No:
2853247-IRFR9310
Description:
MOSFET P-CH 400V 1.8A DPAK
ECAD Model:
Datasheet:
IRFR9310

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Specifications
Vishay Siliconix IRFR9310 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9310.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -400V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -1.8A
  • Number of Channels
    1
  • Power Dissipation-Max
    50W Tc
  • Element Configuration
    Single
  • Power Dissipation
    50W
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    7Ohm @ 1.1A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    270pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    24 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    1.8A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -400V
  • Input Capacitance
    270pF
  • Drain to Source Resistance
    7Ohm
  • Rds On Max
    7 Ω
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFR9310 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 270pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-400V. And this device has -400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 7Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFR9310 Features
a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of -400V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 7Ohm
a 400V drain to source voltage (Vdss)


IRFR9310 Applications
There are a lot of Vishay Siliconix
IRFR9310 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFR9310 More Descriptions
MOSFET, POWER; P-CHANNEL; /- 20 VOLTS (MAX.); -1.8 AMP (MAX.) DRAIN; 50W
Trans MOSFET P-CH 400V 1.8A 3-Pin(2 Tab) DPAK
MOSFET P-CHANNEL 400V
VISHAY TO-252-3
Product Comparison
The three parts on the right have similar specifications to IRFR9310.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Series
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFR9310
    IRFR9310
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    1.437803g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -400V
    MOSFET (Metal Oxide)
    -1.8A
    1
    50W Tc
    Single
    50W
    11 ns
    P-Channel
    7Ohm @ 1.1A, 10V
    4V @ 250μA
    270pF @ 25V
    1.8A Tc
    13nC @ 10V
    10ns
    400V
    10V
    ±20V
    24 ns
    25 ns
    1.8A
    20V
    -400V
    270pF
    7Ohm
    7 Ω
    2.39mm
    6.73mm
    6.22mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DTRPBF
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    144W Tc
    -
    -
    -
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR010TRR
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    25W Tc
    -
    -
    -
    N-Channel
    200m Ω @ 4.6A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    -
    50V
    10V
    ±20V
    -
    -
    8.2A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR13N15DTR
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    150V
    MOSFET (Metal Oxide)
    14A
    -
    86W Tc
    -
    -
    -
    N-Channel
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    26ns
    -
    10V
    ±30V
    -
    -
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    HEXFET®
    SILICON
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    0.18Ohm
    56A
    130 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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