Vishay Siliconix IRFR9310
- Part Number:
- IRFR9310
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853247-IRFR9310
- Description:
- MOSFET P-CH 400V 1.8A DPAK
- Datasheet:
- IRFR9310
Vishay Siliconix IRFR9310 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9310.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-1.8A
- Number of Channels1
- Power Dissipation-Max50W Tc
- Element ConfigurationSingle
- Power Dissipation50W
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs7Ohm @ 1.1A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.8A Tc
- Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
- Rise Time10ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)24 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)1.8A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-400V
- Input Capacitance270pF
- Drain to Source Resistance7Ohm
- Rds On Max7 Ω
- Height2.39mm
- Length6.73mm
- Width6.22mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR9310 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 270pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-400V. And this device has -400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 7Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFR9310 Features
a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of -400V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 7Ohm
a 400V drain to source voltage (Vdss)
IRFR9310 Applications
There are a lot of Vishay Siliconix
IRFR9310 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 270pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 1.8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-400V. And this device has -400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 7Ohm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFR9310 Features
a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of -400V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 7Ohm
a 400V drain to source voltage (Vdss)
IRFR9310 Applications
There are a lot of Vishay Siliconix
IRFR9310 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFR9310 More Descriptions
MOSFET, POWER; P-CHANNEL; /- 20 VOLTS (MAX.); -1.8 AMP (MAX.) DRAIN; 50W
Trans MOSFET P-CH 400V 1.8A 3-Pin(2 Tab) DPAK
MOSFET P-CHANNEL 400V
VISHAY TO-252-3
Trans MOSFET P-CH 400V 1.8A 3-Pin(2 Tab) DPAK
MOSFET P-CHANNEL 400V
VISHAY TO-252-3
The three parts on the right have similar specifications to IRFR9310.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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IRFR9310Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C-400VMOSFET (Metal Oxide)-1.8A150W TcSingle50W11 nsP-Channel7Ohm @ 1.1A, 10V4V @ 250μA270pF @ 25V1.8A Tc13nC @ 10V10ns400V10V±20V24 ns25 ns1.8A20V-400V270pF7Ohm7 Ω2.39mm6.73mm6.22mmNon-RoHS CompliantContains Lead------------------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc---N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V-------------HEXFET®----------------------
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)---MOSFET (Metal Oxide)--25W Tc---N-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-50V10V±20V--8.2A--------Non-RoHS Compliant------------------------
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)--150VMOSFET (Metal Oxide)14A-86W Tc---N-Channel180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V26ns-10V±30V--14A--------Non-RoHS CompliantContains LeadHEXFET®SILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA0.18Ohm56A130 mJ
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