IRFR9214

Vishay Siliconix IRFR9214

Part Number:
IRFR9214
Manufacturer:
Vishay Siliconix
Ventron No:
2491606-IRFR9214
Description:
MOSFET P-CH 250V 2.7A DPAK
ECAD Model:
Datasheet:
IRFR9214

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Specifications
Vishay Siliconix IRFR9214 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9214.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1997
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -250V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -2.7A
  • Number of Channels
    1
  • Power Dissipation-Max
    50W Tc
  • Element Configuration
    Single
  • Power Dissipation
    50W
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    3Ohm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    220pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    14nC @ 10V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    250V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Forward Voltage
    -5.8V
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    2.7A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -250V
  • Input Capacitance
    220pF
  • Drain to Source Resistance
    3Ohm
  • Rds On Max
    3 Ω
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFR9214 Overview
A device's maximum input capacitance is 220pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-250V, and this device has a drain-to-source breakdown voltage of -250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFR9214 Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 3Ohm
a 250V drain to source voltage (Vdss)


IRFR9214 Applications
There are a lot of Vishay Siliconix
IRFR9214 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR9214 More Descriptions
MOSFET, POWER; P-CHANNEL; -250 V; 3 OHMS; 20 V; 50 W; -2.7 A; TO-251AA; 11 NS
Transistor PNP IRFR9214 INTERNATIONAL RECTIFIER Ampere=2.7 Volt=250 TO252/DPAKHalfin
TRANS MOSFET P-CH 250V 2.7A 3PIN DPAK
Product Comparison
The three parts on the right have similar specifications to IRFR9214.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Forward Voltage
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Series
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFR9214
    IRFR9214
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    1.437803g
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -250V
    MOSFET (Metal Oxide)
    -2.7A
    1
    50W Tc
    Single
    50W
    11 ns
    P-Channel
    3Ohm @ 1.7A, 10V
    4V @ 250μA
    220pF @ 25V
    2.7A Tc
    14nC @ 10V
    14ns
    250V
    10V
    ±20V
    -5.8V
    17 ns
    20 ns
    2.7A
    20V
    -250V
    220pF
    3Ohm
    3 Ω
    2.39mm
    6.73mm
    6.22mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DTRPBF
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    144W Tc
    -
    -
    -
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DCTRRP
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    D-Pak
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    144W Tc
    -
    -
    -
    N-Channel
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR13N15DTR
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    150V
    MOSFET (Metal Oxide)
    14A
    -
    86W Tc
    -
    -
    -
    N-Channel
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    26ns
    -
    10V
    ±30V
    -
    -
    -
    14A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    HEXFET®
    SILICON
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    0.18Ohm
    56A
    130 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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