Vishay Siliconix IRFR9214
- Part Number:
- IRFR9214
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491606-IRFR9214
- Description:
- MOSFET P-CH 250V 2.7A DPAK
- Datasheet:
- IRFR9214
Vishay Siliconix IRFR9214 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9214.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-250V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-2.7A
- Number of Channels1
- Power Dissipation-Max50W Tc
- Element ConfigurationSingle
- Power Dissipation50W
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs3Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds220pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.7A Tc
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)250V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Forward Voltage-5.8V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)2.7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-250V
- Input Capacitance220pF
- Drain to Source Resistance3Ohm
- Rds On Max3 Ω
- Height2.39mm
- Length6.73mm
- Width6.22mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR9214 Overview
A device's maximum input capacitance is 220pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-250V, and this device has a drain-to-source breakdown voltage of -250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR9214 Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 3Ohm
a 250V drain to source voltage (Vdss)
IRFR9214 Applications
There are a lot of Vishay Siliconix
IRFR9214 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 220pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-250V, and this device has a drain-to-source breakdown voltage of -250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 20 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 3Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR9214 Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 3Ohm
a 250V drain to source voltage (Vdss)
IRFR9214 Applications
There are a lot of Vishay Siliconix
IRFR9214 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR9214 More Descriptions
MOSFET, POWER; P-CHANNEL; -250 V; 3 OHMS; 20 V; 50 W; -2.7 A; TO-251AA; 11 NS
Transistor PNP IRFR9214 INTERNATIONAL RECTIFIER Ampere=2.7 Volt=250 TO252/DPAKHalfin
TRANS MOSFET P-CH 250V 2.7A 3PIN DPAK
Transistor PNP IRFR9214 INTERNATIONAL RECTIFIER Ampere=2.7 Volt=250 TO252/DPAKHalfin
TRANS MOSFET P-CH 250V 2.7A 3PIN DPAK
The three parts on the right have similar specifications to IRFR9214.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Forward VoltageFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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IRFR9214Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTube1997Obsolete1 (Unlimited)150°C-55°C-250VMOSFET (Metal Oxide)-2.7A150W TcSingle50W11 nsP-Channel3Ohm @ 1.7A, 10V4V @ 250μA220pF @ 25V2.7A Tc14nC @ 10V14ns250V10V±20V-5.8V17 ns20 ns2.7A20V-250V220pF3Ohm3 Ω2.39mm6.73mm6.22mmNon-RoHS CompliantContains Lead------------------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc---N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V--------------HEXFET®----------------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-D-Pak--55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc---N-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V--------------HEXFET®----------------------
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)--150VMOSFET (Metal Oxide)14A-86W Tc---N-Channel180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V26ns-10V±30V---14A--------Non-RoHS CompliantContains LeadHEXFET®SILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA0.18Ohm56A130 mJ
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