Vishay Siliconix IRFR9120TRPBF
- Part Number:
- IRFR9120TRPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848915-IRFR9120TRPBF
- Description:
- MOSFET P-CH 100V 5.6A DPAK
- Datasheet:
- IRFR9120TRPBF
Vishay Siliconix IRFR9120TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR9120TRPBF.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1998
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance600mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Voltage100V
- Power Dissipation-Max2.5W Ta 42W Tc
- Element ConfigurationSingle
- Current56A
- Power Dissipation2.5W
- Turn On Delay Time9.5 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs600mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds390pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.6A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
- Rise Time29ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)5.6A
- Threshold Voltage-2V
- Gate to Source Voltage (Vgs)20V
- Input Capacitance390pF
- Drain to Source Resistance600mOhm
- Rds On Max600 mΩ
- Nominal Vgs-2 V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFR9120TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 390pF @ 25V.This device conducts a continuous drain current (ID) of 5.6A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 600mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR9120TRPBF Features
a continuous drain current (ID) of 5.6A
the turn-off delay time is 21 ns
single MOSFETs transistor is 600mOhm
a threshold voltage of -2V
a 100V drain to source voltage (Vdss)
IRFR9120TRPBF Applications
There are a lot of Vishay Siliconix
IRFR9120TRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 390pF @ 25V.This device conducts a continuous drain current (ID) of 5.6A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 21 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 600mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -2V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR9120TRPBF Features
a continuous drain current (ID) of 5.6A
the turn-off delay time is 21 ns
single MOSFETs transistor is 600mOhm
a threshold voltage of -2V
a 100V drain to source voltage (Vdss)
IRFR9120TRPBF Applications
There are a lot of Vishay Siliconix
IRFR9120TRPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFR9120TRPBF More Descriptions
Single P-Channel 100 V 0.6 Ohms Surface Mount Power Mosfet - TO-252
IRFR9120TRPBF P-channel MOSFET Transistor, 5.6 A, 100 V, 3-Pin TO-252 | Siliconix / Vishay IRFR9120TRPBF
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IRFR9120TRPBF P-channel MOSFET Transistor, 5.6 A, 100 V, 3-Pin TO-252 | Siliconix / Vishay IRFR9120TRPBF
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
The three parts on the right have similar specifications to IRFR9120TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFR9120TRPBF8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTape & Reel (TR)1998Active1 (Unlimited)600mOhm150°C-55°CMOSFET (Metal Oxide)11100V2.5W Ta 42W TcSingle56A2.5W9.5 nsP-Channel600mOhm @ 3.4A, 10V4V @ 250μA390pF @ 25V5.6A Tc18nC @ 10V29ns100V10V±20V25 ns21 ns5.6A-2V20V390pF600mOhm600 mΩ-2 V2.39mm6.73mm6.22mmUnknownNoROHS3 CompliantLead Free----------------------------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----Tape & Reel (TR)2004Discontinued1 (Unlimited)---MOSFET (Metal Oxide)1--45W Tc----N-Channel75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V-55V10V±20V--------------ROHS3 Compliant-YESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified175°CSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA17A0.075Ohm68A55V71 mJ
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-D-Pak--55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---144W Tc----N-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V------------------HEXFET®------------------------
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-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)---MOSFET (Metal Oxide)---25W Tc----N-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-50V10V±20V--8.2A-----------Non-RoHS Compliant----------------------------
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