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IRFR4615TRLPBF

Infineon Technologies IRFR4615TRLPBF

Part Number:
IRFR4615TRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2478881-IRFR4615TRLPBF
Description:
MOSFET N-CH 150V 33A DPAK
ECAD Model:
Datasheet:
IRFR4615TRLPBF

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Specifications
Infineon Technologies IRFR4615TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR4615TRLPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    144W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    144W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    42m Ω @ 21A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1750pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    33A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 10V
  • Rise Time
    35ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    33A
  • Threshold Voltage
    5V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.042Ohm
  • Drain to Source Breakdown Voltage
    150V
  • Max Junction Temperature (Tj)
    175°C
  • Nominal Vgs
    5 V
  • Height
    2.52mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFR4615TRLPBF Description
IRFR4615TRLPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 150V. The operating temperature of the IRFR4615TRLPBF is -55°C~175°C TJ and its maximum power dissipation is 144W Tc. IRFR4615TRLPBF has 3 pins and it is available in Tape & Reel (TR) packaging way. The Drain to Source Breakdown Voltage of IRFR4615TRLPBF is 150V.

IRFR4615TRLPBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free

IRFR4615TRLPBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRFR4615TRLPBF More Descriptions
N CH POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Conti
Single N-Channel 150V 42 mOhm 26 nC HEXFET® Power Mosfet - TO-252-3
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
Trans MOSFET N-CH 150V 33A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 150V 33A DPAK
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Product Comparison
The three parts on the right have similar specifications to IRFR4615TRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Additional Feature
    Reach Compliance Code
    Qualification Status
    Operating Temperature (Max)
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRFR4615TRLPBF
    IRFR4615TRLPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    1
    144W Tc
    ENHANCEMENT MODE
    144W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    42m Ω @ 21A, 10V
    5V @ 100μA
    1750pF @ 50V
    33A Tc
    26nC @ 10V
    35ns
    10V
    ±20V
    20 ns
    25 ns
    33A
    5V
    TO-252AA
    20V
    0.042Ohm
    150V
    175°C
    5 V
    2.52mm
    6.7056mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR024NTRRPBF
    IRFR024NTRRPBF
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    -
    45W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    75m Ω @ 10A, 10V
    4V @ 250μA
    370pF @ 25V
    17A Tc
    20nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    TO-252AA
    -
    0.075Ohm
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    not_compliant
    Not Qualified
    175°C
    55V
    17A
    68A
    55V
    71 mJ
    -
    -
    IRFR4615TRLPBF vs IRFR024NTRRPBF
  • IRFR12N25DTRRP
    IRFR12N25DTRRP
    Infineon Technologies
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    N-Channel
    -
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    -
    -
    -
    -
    -
    -
    IRFR4615TRLPBF vs IRFR12N25DTRRP
  • IRFR13N15DTR
    IRFR13N15DTR
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    -
    86W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    26ns
    10V
    ±30V
    -
    -
    14A
    -
    TO-252AA
    -
    0.18Ohm
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    not_compliant
    Not Qualified
    -
    -
    -
    56A
    -
    130 mJ
    150V
    14A
    IRFR4615TRLPBF vs IRFR13N15DTR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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