IRFR420TR

Vishay Siliconix IRFR420TR

Part Number:
IRFR420TR
Manufacturer:
Vishay Siliconix
Ventron No:
2491656-IRFR420TR
Description:
MOSFET N-CH 500V 2.4A DPAK
ECAD Model:
Datasheet:
IRFR420TR

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Specifications
Vishay Siliconix IRFR420TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR420TR.
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Mounting Type
    Surface Mount
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Weight
    1.437803g
  • Published
    2016
  • Packaging
    Tape & Reel (TR)
  • Operating Temperature
    -55°C~150°C TJ
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    2.4A
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 42W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3Ohm @ 1.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    360pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Rise Time
    8.6ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    2.4A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    360pF
  • Drain to Source Resistance
    3Ohm
  • Rds On Max
    3 Ω
  • Width
    6.22mm
  • Length
    6.73mm
  • Height
    2.39mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFR420TR Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFR420TR Features
a continuous drain current (ID) of 2.4A
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)


IRFR420TR Applications
There are a lot of Vishay Siliconix
IRFR420TR applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFR420TR More Descriptions
500V 2.4A SINGLE N-CHANNEL HEXFET POWER MOSFET IN A D-Trans MOSFET N-CH 500V 2.4A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Product Comparison
The three parts on the right have similar specifications to IRFR420TR.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Mounting Type
    Mount
    Number of Pins
    Supplier Device Package
    Weight
    Published
    Packaging
    Operating Temperature
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Width
    Length
    Height
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFR420TR
    IRFR420TR
    TO-252-3, DPak (2 Leads Tab), SC-63
    Surface Mount
    Surface Mount
    3
    D-Pak
    1.437803g
    2016
    Tape & Reel (TR)
    -55°C~150°C TJ
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    2.4A
    1
    2.5W Ta 42W Tc
    Single
    8 ns
    N-Channel
    3Ohm @ 1.4A, 10V
    4V @ 250μA
    360pF @ 25V
    2.4A Tc
    19nC @ 10V
    8.6ns
    500V
    10V
    ±20V
    16 ns
    33 ns
    2.4A
    20V
    360pF
    3Ohm
    3 Ω
    6.22mm
    6.73mm
    2.39mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR024NTRRPBF
    TO-252-3, DPak (2 Leads Tab), SC-63
    Surface Mount
    -
    -
    -
    -
    2004
    Tape & Reel (TR)
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    45W Tc
    -
    -
    N-Channel
    75m Ω @ 10A, 10V
    4V @ 250μA
    370pF @ 25V
    17A Tc
    20nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    HEXFET®
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    FET General Purpose Power
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    175°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    17A
    0.075Ohm
    68A
    55V
    71 mJ
  • IRFR120NCTRLPBF
    TO-252-3, DPak (2 Leads Tab), SC-63
    Surface Mount
    -
    -
    -
    -
    2004
    Tape & Reel (TR)
    -55°C~175°C TJ
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    48W Tc
    -
    -
    N-Channel
    210m Ω @ 5.6A, 10V
    4V @ 250μA
    330pF @ 25V
    9.4A Ta
    25nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DTRRP
    TO-252-3, DPak (2 Leads Tab), SC-63
    Surface Mount
    -
    -
    -
    -
    2004
    Tape & Reel (TR)
    -55°C~175°C TJ
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    144W Tc
    -
    -
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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