Vishay Siliconix IRFR420TR
- Part Number:
- IRFR420TR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491656-IRFR420TR
- Description:
- MOSFET N-CH 500V 2.4A DPAK
- Datasheet:
- IRFR420TR
Vishay Siliconix IRFR420TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR420TR.
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Mounting TypeSurface Mount
- MountSurface Mount
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Published2016
- PackagingTape & Reel (TR)
- Operating Temperature-55°C~150°C TJ
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating2.4A
- Number of Channels1
- Power Dissipation-Max2.5W Ta 42W Tc
- Element ConfigurationSingle
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3Ohm @ 1.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.4A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time8.6ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)2.4A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance360pF
- Drain to Source Resistance3Ohm
- Rds On Max3 Ω
- Width6.22mm
- Length6.73mm
- Height2.39mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR420TR Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFR420TR Features
a continuous drain current (ID) of 2.4A
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)
IRFR420TR Applications
There are a lot of Vishay Siliconix
IRFR420TR applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFR420TR Features
a continuous drain current (ID) of 2.4A
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a 500V drain to source voltage (Vdss)
IRFR420TR Applications
There are a lot of Vishay Siliconix
IRFR420TR applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFR420TR More Descriptions
500V 2.4A SINGLE N-CHANNEL HEXFET POWER MOSFET IN A D-Trans MOSFET N-CH 500V 2.4A 3-Pin(2 Tab) DPAK T/R
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
The three parts on the right have similar specifications to IRFR420TR.
-
ImagePart NumberManufacturerPackage / CaseMounting TypeMountNumber of PinsSupplier Device PackageWeightPublishedPackagingOperating TemperaturePart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxWidthLengthHeightRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
-
IRFR420TRTO-252-3, DPak (2 Leads Tab), SC-63Surface MountSurface Mount3D-Pak1.437803g2016Tape & Reel (TR)-55°C~150°C TJObsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)2.4A12.5W Ta 42W TcSingle8 nsN-Channel3Ohm @ 1.4A, 10V4V @ 250μA360pF @ 25V2.4A Tc19nC @ 10V8.6ns500V10V±20V16 ns33 ns2.4A20V360pF3Ohm3 Ω6.22mm6.73mm2.39mmNon-RoHS CompliantContains Lead-----------------------------
-
TO-252-3, DPak (2 Leads Tab), SC-63Surface Mount----2004Tape & Reel (TR)-Discontinued1 (Unlimited)---MOSFET (Metal Oxide)--45W Tc--N-Channel75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V-55V10V±20V----------ROHS3 Compliant-YESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA17A0.075Ohm68A55V71 mJ
-
TO-252-3, DPak (2 Leads Tab), SC-63Surface Mount----2004Tape & Reel (TR)-55°C~175°C TJObsolete1 (Unlimited)---MOSFET (Metal Oxide)--48W Tc--N-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V-100V10V±20V--------------HEXFET®-------------------------
-
TO-252-3, DPak (2 Leads Tab), SC-63Surface Mount----2004Tape & Reel (TR)-55°C~175°C TJObsolete1 (Unlimited)---MOSFET (Metal Oxide)--144W Tc--N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V--------------HEXFET®-------------------------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
08 December 2023
AT89C51 Microcontroller Structure, Features, Function, AT89C51 vs AT89C52 and Applications
Ⅰ. What is AT89C51?Ⅱ. Pin configuration of AT89C51 microcontrollerⅢ. Structure of AT89C51 microcontrollerⅣ. What are the features of AT89C51 microcontroller?Ⅴ. Function of AT89C51 microcontrollerⅥ. Block diagram of AT89C51... -
11 December 2023
STM32F030F4P6 32-bit Microcontroller Features, Advantages and disadvantages, Dimension and Applications
Ⅰ. What is STM32F030F4P6?Ⅱ. Symbol, footprint and pin configuration of STM32F030F4P6 microcontrollerⅢ. What are the features of STM32F030F4P6 microcontroller?Ⅳ. Advantages and disadvantages of STM32F030F4P6 microcontrollerⅤ. Technical parameters of... -
11 December 2023
CR2032 vs CR2450: What is the Difference?
Ⅰ. What is a button battery?Ⅱ. CR2032 vs CR2450: OverviewⅢ. CR2032 vs CR2450: Symbol and footprintⅣ. CR2032 vs CR2450: FeaturesⅤ. CR2032 vs CR2450: Technical parametersⅥ. CR2450 vs CR2032:... -
12 December 2023
What is 74LS74 Dual D Flip Flop?
Ⅰ. What is a D flip-flop?Ⅱ. Overview of 74LS74Ⅲ. Pin configuration and functions of 74LS74Ⅳ. What are the features of 74LS74?Ⅴ. Structure and working principle of 74LS74Ⅵ. Technical...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.