Infineon Technologies IRFR2407TRPBF
- Part Number:
- IRFR2407TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484493-IRFR2407TRPBF
- Description:
- MOSFET N-CH 75V 42A DPAK
- Datasheet:
- IRFR2407TRPBF
Infineon Technologies IRFR2407TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR2407TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2000
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance26mOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC75V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating42A
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max110W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation110W
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs26m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C42A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time90ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)66 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)42A
- Threshold Voltage4V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage75V
- Dual Supply Voltage75V
- Recovery Time150 ns
- Nominal Vgs4 V
- Height2.3876mm
- Length6.7056mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFR2407TRPBF Description
IRFR2407TRPBF belongs to the family of seven-generation HEXFET? power MOSFET provided by Infineon Technologies based on advanced processing techniques. The resulting device is able to provide extremely low on-resistance per silicon area, fast switching speed, and ruggedized device design, making it highly efficient and reliable for electronic engineers to use in a wide range of applications.
IRFR2407TRPBF Features
Fast switching speed
Ruggedized device design
Dynamic dv/dt rating
Low on-resistance per silicon area
Available in the D-Pak package
IRFR2407TRPBF Applications
High-frequency DC-DC converters
IRFR2407TRPBF belongs to the family of seven-generation HEXFET? power MOSFET provided by Infineon Technologies based on advanced processing techniques. The resulting device is able to provide extremely low on-resistance per silicon area, fast switching speed, and ruggedized device design, making it highly efficient and reliable for electronic engineers to use in a wide range of applications.
IRFR2407TRPBF Features
Fast switching speed
Ruggedized device design
Dynamic dv/dt rating
Low on-resistance per silicon area
Available in the D-Pak package
IRFR2407TRPBF Applications
High-frequency DC-DC converters
IRFR2407TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0218Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Single N-Channel 75 V 0.026 Ohm 74 nC HEXFET® Power Mosfet - TO-252AA
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N-CH, 75V, 42A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Source Voltage Vds:75V; On Resistance
Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:42A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak; Power Dissipation, Pd:110W ;RoHS Compliant: Yes
MOSFET, N-CH, 75V, 42A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0218ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 26 / Gate-Source Voltage V = 20 / Fall Time ns = 66 / Rise Time ns = 90 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Single N-Channel 75 V 0.026 Ohm 74 nC HEXFET® Power Mosfet - TO-252AA
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N-CH, 75V, 42A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Source Voltage Vds:75V; On Resistance
Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:42A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak; Power Dissipation, Pd:110W ;RoHS Compliant: Yes
MOSFET, N-CH, 75V, 42A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0218ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 26 / Gate-Source Voltage V = 20 / Fall Time ns = 66 / Rise Time ns = 90 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
The three parts on the right have similar specifications to IRFR2407TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeDrain to Source Voltage (Vdss)Supplier Device PackageTerminal PositionReach Compliance CodeQualification StatusConfigurationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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IRFR2407TRPBF12 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Active1 (Unlimited)2SMD/SMTEAR9926mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power75VMOSFET (Metal Oxide)GULL WING26042A30R-PSSO-G21110W TcSingleENHANCEMENT MODE110WDRAIN16 nsN-ChannelSWITCHING26m Ω @ 25A, 10V4V @ 250μA2400pF @ 25V42A Tc110nC @ 10V90ns10V±20V66 ns65 ns42A4VTO-252AA20V75V75V150 ns4 V2.3876mm6.7056mm6.22mmNo SVHCNoROHS3 CompliantLead Free----------
-
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)--------MOSFET (Metal Oxide)------48W Tc-----N-Channel-210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V-10V±20V-----------------100V--------
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--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2001-Obsolete1 (Unlimited)--------MOSFET (Metal Oxide)------144W Tc-----N-Channel-260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-10V±30V-----------------250VD-Pak-------
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-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Obsolete1 (Unlimited)2-EAR99-Matte Tin (Sn) - with Nickel (Ni) barrier-FET General Purpose Power150VMOSFET (Metal Oxide)GULL WING26014A30R-PSSO-G2186W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V26ns10V±30V--14A-TO-252AA----------Non-RoHS CompliantContains Lead--SINGLEnot_compliantNot QualifiedSINGLE WITH BUILT-IN DIODE0.18Ohm56A130 mJ
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