IRFR2407TRPBF

Infineon Technologies IRFR2407TRPBF

Part Number:
IRFR2407TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2484493-IRFR2407TRPBF
Description:
MOSFET N-CH 75V 42A DPAK
ECAD Model:
Datasheet:
IRFR2407TRPBF

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Specifications
Infineon Technologies IRFR2407TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR2407TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2000
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    26mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    75V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    42A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    26m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    42A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    90ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    66 ns
  • Turn-Off Delay Time
    65 ns
  • Continuous Drain Current (ID)
    42A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    75V
  • Dual Supply Voltage
    75V
  • Recovery Time
    150 ns
  • Nominal Vgs
    4 V
  • Height
    2.3876mm
  • Length
    6.7056mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFR2407TRPBF Description
IRFR2407TRPBF belongs to the family of seven-generation HEXFET? power MOSFET provided by Infineon Technologies based on advanced processing techniques. The resulting device is able to provide extremely low on-resistance per silicon area, fast switching speed, and ruggedized device design, making it highly efficient and reliable for electronic engineers to use in a wide range of applications.

IRFR2407TRPBF Features
Fast switching speed
Ruggedized device design
Dynamic dv/dt rating
Low on-resistance per silicon area
Available in the D-Pak package

IRFR2407TRPBF Applications
High-frequency DC-DC converters

IRFR2407TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 0.0218Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Single N-Channel 75 V 0.026 Ohm 74 nC HEXFET® Power Mosfet - TO-252AA
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
MOSFET, N-CH, 75V, 42A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Source Voltage Vds:75V; On Resistance
Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:42A; On Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak; Power Dissipation, Pd:110W ;RoHS Compliant: Yes
MOSFET, N-CH, 75V, 42A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 42A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0218ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 26 / Gate-Source Voltage V = 20 / Fall Time ns = 66 / Rise Time ns = 90 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Product Comparison
The three parts on the right have similar specifications to IRFR2407TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Voltage (Vdss)
    Supplier Device Package
    Terminal Position
    Reach Compliance Code
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFR2407TRPBF
    IRFR2407TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    26mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    75V
    MOSFET (Metal Oxide)
    GULL WING
    260
    42A
    30
    R-PSSO-G2
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    16 ns
    N-Channel
    SWITCHING
    26m Ω @ 25A, 10V
    4V @ 250μA
    2400pF @ 25V
    42A Tc
    110nC @ 10V
    90ns
    10V
    ±20V
    66 ns
    65 ns
    42A
    4V
    TO-252AA
    20V
    75V
    75V
    150 ns
    4 V
    2.3876mm
    6.7056mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR120NCTRLPBF
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    48W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    210m Ω @ 5.6A, 10V
    4V @ 250μA
    330pF @ 25V
    9.4A Ta
    25nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100V
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DCTRRP
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2001
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    144W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    260mOhm @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    D-Pak
    -
    -
    -
    -
    -
    -
    -
  • IRFR13N15DTR
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    GULL WING
    260
    14A
    30
    R-PSSO-G2
    1
    86W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    26ns
    10V
    ±30V
    -
    -
    14A
    -
    TO-252AA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    SINGLE
    not_compliant
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    0.18Ohm
    56A
    130 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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