Infineon Technologies IRFR220NTRR
- Part Number:
- IRFR220NTRR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586844-IRFR220NTRR
- Description:
- MOSFET N-CH 200V 5A DPAK
- Datasheet:
- IRFR220N, IRFU220N
Infineon Technologies IRFR220NTRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR220NTRR.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2000
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max43W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs600m Ω @ 2.9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-252AA
- Drain Current-Max (Abs) (ID)5A
- Drain-source On Resistance-Max0.6Ohm
- Pulsed Drain Current-Max (IDM)20A
- DS Breakdown Voltage-Min200V
- Avalanche Energy Rating (Eas)46 mJ
- RoHS StatusNon-RoHS Compliant
IRFR220NTRR Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 46 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 5A.Pulsed drain current is maximum rated peak drain current 20A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR220NTRR Features
the avalanche energy rating (Eas) is 46 mJ
based on its rated peak drain current 20A.
a 200V drain to source voltage (Vdss)
IRFR220NTRR Applications
There are a lot of Infineon Technologies
IRFR220NTRR applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 46 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 5A.Pulsed drain current is maximum rated peak drain current 20A.A normal operation of the DS requires keeping the breakdown voltage above 200V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR220NTRR Features
the avalanche energy rating (Eas) is 46 mJ
based on its rated peak drain current 20A.
a 200V drain to source voltage (Vdss)
IRFR220NTRR Applications
There are a lot of Infineon Technologies
IRFR220NTRR applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFR220NTRR More Descriptions
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
MOSFET, 200V, 5A, 600 mOhm, 15 nC Qg, D-Pak
MOSFET N-CH 200V 5A DPAK
MOSFET, 200V, 5A, 600 mOhm, 15 nC Qg, D-Pak
MOSFET N-CH 200V 5A DPAK
The three parts on the right have similar specifications to IRFR220NTRR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusAdditional FeatureOperating Temperature (Max)Supplier Device PackageView Compare
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IRFR220NTRRSurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE43W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING600m Ω @ 2.9A, 10V4V @ 250μA300pF @ 25V5A Tc23nC @ 10V200V10V±20VTO-252AA5A0.6Ohm20A200V46 mJNon-RoHS Compliant----
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-Tape & Reel (TR)HEXFET®2004e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE45W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V55V10V±20VTO-252AA17A0.075Ohm68A55V71 mJROHS3 CompliantAVALANCHE RATED, ULTRA LOW RESISTANCE175°C-
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2001-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---------144W Tc--N-Channel-260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V---------D-Pak
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)HEXFET®2004-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---------48W Tc--N-Channel-210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V100V10V±20V----------
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