Infineon Technologies IRFR220NPBF
- Part Number:
- IRFR220NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483301-IRFR220NPBF
- Description:
- MOSFET N-CH 200V 5A DPAK
- Datasheet:
- IRFR220NPBF
Infineon Technologies IRFR220NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR220NPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2000
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codenot_compliant
- Power Dissipation-Max43W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs600m Ω @ 2.9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5A Tc
- Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRFR220NPBF Description
IRFR220NPBF is an N-channel Power MOSFET transistor form the manufacturer Infineon Technologies with a drain to source voltage of 200V. The operating temperature of the IRFR220NPBF is -55??C~175??C TJ and its maximum power dissipation is 43W Tc. IRFR220NPBF has 2 pins and it is available in Tube packaging way.
IRFR220NPBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRFR220NPBF Applications
High frequency DC-DC converters
Lead-Free
IRFR220NPBF is an N-channel Power MOSFET transistor form the manufacturer Infineon Technologies with a drain to source voltage of 200V. The operating temperature of the IRFR220NPBF is -55??C~175??C TJ and its maximum power dissipation is 43W Tc. IRFR220NPBF has 2 pins and it is available in Tube packaging way.
IRFR220NPBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRFR220NPBF Applications
High frequency DC-DC converters
Lead-Free
IRFR220NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
Single N-Channel 200 V 6.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 200V, 5A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:43W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:DPAK; Power Dissipation Pd:43W; Power Dissipation Pd:43W; Pulse Current Idm:20A; SMD Marking:IRFR220N; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 200 V 6.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 200V, 5A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:43W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:DPAK; Power Dissipation Pd:43W; Power Dissipation Pd:43W; Pulse Current Idm:20A; SMD Marking:IRFR220N; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFR220NPBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyReach Compliance CodePower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFR220NPBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTubeHEXFET®2000Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)not_compliant43W TcN-Channel600m Ω @ 2.9A, 10V4V @ 250μA300pF @ 25V5A Tc23nC @ 10V200V10V±20VROHS3 Compliant--------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-Tape & Reel (TR)HEXFET®2004Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)not_compliant48W TcN-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Tc25nC @ 10V100V10V±20VROHS3 CompliantYESSILICONe32Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA9.4A0.21Ohm38A100V91 mJ
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V--------------------------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)-MOSFET (Metal Oxide)-144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V--------------------------
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