IRFR220NPBF

Infineon Technologies IRFR220NPBF

Part Number:
IRFR220NPBF
Manufacturer:
Infineon Technologies
Ventron No:
2483301-IRFR220NPBF
Description:
MOSFET N-CH 200V 5A DPAK
ECAD Model:
Datasheet:
IRFR220NPBF

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Specifications
Infineon Technologies IRFR220NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR220NPBF.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2000
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Reach Compliance Code
    not_compliant
  • Power Dissipation-Max
    43W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    600m Ω @ 2.9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
IRFR220NPBF Description
IRFR220NPBF is an N-channel Power MOSFET transistor form the manufacturer Infineon Technologies with a drain to source voltage of 200V. The operating temperature of the IRFR220NPBF is -55??C~175??C TJ and its maximum power dissipation is 43W Tc. IRFR220NPBF has 2 pins and it is available in Tube packaging way.

IRFR220NPBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current

IRFR220NPBF Applications
High frequency DC-DC converters
Lead-Free
IRFR220NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W
Single N-Channel 200 V 6.8 mOhm 23 nC HEXFET® Power Mosfet - TO-252-3
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 200V, 5A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:43W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:3.5°C/W; Package / Case:DPAK; Power Dissipation Pd:43W; Power Dissipation Pd:43W; Pulse Current Idm:20A; SMD Marking:IRFR220N; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFR220NPBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Technology
    Reach Compliance Code
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFR220NPBF
    IRFR220NPBF
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    Discontinued
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    not_compliant
    43W Tc
    N-Channel
    600m Ω @ 2.9A, 10V
    4V @ 250μA
    300pF @ 25V
    5A Tc
    23nC @ 10V
    200V
    10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR120NTRRPBF
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    Discontinued
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    not_compliant
    48W Tc
    N-Channel
    210m Ω @ 5.6A, 10V
    4V @ 250μA
    330pF @ 25V
    9.4A Tc
    25nC @ 10V
    100V
    10V
    ±20V
    ROHS3 Compliant
    YES
    SILICON
    e3
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    175°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    9.4A
    0.21Ohm
    38A
    100V
    91 mJ
  • IRFR12N25DTRPBF
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    144W Tc
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR12N25DTRRP
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    144W Tc
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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