Vishay Siliconix IRFR110TR
- Part Number:
- IRFR110TR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3071462-IRFR110TR
- Description:
- MOSFET N-CH 100V 4.3A DPAK
- Datasheet:
- IRFR110TR
Vishay Siliconix IRFR110TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR110TR.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating4.3A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 25W Tc
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time6.9 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs540mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds180pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.3A Tc
- Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
- Rise Time16ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)9.4 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)4.3A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance180pF
- Drain to Source Resistance540mOhm
- Rds On Max540 mΩ
- Height2.39mm
- Length6.73mm
- Width6.22mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR110TR Overview
A device's maximum input capacitance is 180pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 540mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR110TR Features
a continuous drain current (ID) of 4.3A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRFR110TR Applications
There are a lot of Vishay Siliconix
IRFR110TR applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 180pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 540mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFR110TR Features
a continuous drain current (ID) of 4.3A
the turn-off delay time is 15 ns
single MOSFETs transistor is 540mOhm
a 100V drain to source voltage (Vdss)
IRFR110TR Applications
There are a lot of Vishay Siliconix
IRFR110TR applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFR110TR More Descriptions
Trans MOSFET N-CH 100V 4.3A 3-Pin (2 Tab) DPAK T/R
100V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A D-PAK PACFrench Electronic Distributor since 1988
100V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A D-PAK PAC
The three parts on the right have similar specifications to IRFR110TR.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesView Compare
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IRFR110TRSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)150°C-55°C100VMOSFET (Metal Oxide)4.3A112.5W Ta 25W TcSingle2.5W6.9 nsN-Channel540mOhm @ 2.6A, 10V4V @ 250μA180pF @ 25V4.3A Tc8.3nC @ 10V16ns100V10V±20V9.4 ns15 ns4.3A20V180pF540mOhm540 mΩ2.39mm6.73mm6.22mmNon-RoHS CompliantContains Lead--
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---144W Tc---N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V------------HEXFET®
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---144W Tc---N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V------------HEXFET®
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)---MOSFET (Metal Oxide)---25W Tc---N-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-50V10V±20V--8.2A-------Non-RoHS Compliant--
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