Infineon Technologies IRFR024NTRPBF

Name: IRFR024NTRPBF
Brand: Infineon Technologies
SKU: 2482547-IRFR024NTRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR024NTRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2482547-IRFR024NTRPBF

Description:: MOSFET N-CH 55V 17A DPAK

ECAD Model:

Datasheet:: IRFR024NTRPBF

Specifications

Infineon Technologies IRFR024NTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR024NTRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
75mOhm
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
17A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
38W
Case Connection
DRAIN
Turn On Delay Time
4.9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
370pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
34ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
27 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
4V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
68A
Dual Supply Voltage
55V
Recovery Time
83 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
2.52mm
Length
6.7056mm
Width
6.22mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRFR024NTRPBF Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide the lowest on-resistance per silicon area feasible. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient device that can be used in a wide range of applications. Surface mounting via vapor phase, infrared, or wave soldering processes is possible with the D-PAK. For through-hole mounting applications, the straight lead version (IRFU senes) is used. In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.

IRFR024NTRPBF Features
?On-Resista nee nee nee nee nee nee nee n
?Surface Installation (IRFR024N)
?Standard Lead (IRFU024N)
?Process Technology (advanced)
?Quick Switching
?Avalanche-Resistant
?Lead-Free

IRFR024NTRPBF Applications
Switching applications

IRFR024NTRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
INFINEON SMD MOSFET NFET 55V 17A 75mΩ 175°C TO-252 IRFR024NTRPBF
Single N-Channel 55 V 0.075 Ohm 20nC HEXFET® Power Mosfet - TO-252AA
MOSFET N-CH 55V 17A DPAK / Trans MOSFET N-CH Si 55V 17A 3-Pin(2 Tab) DPAK T/R
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 55V, 17A, D-Pak; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR024NTRPBF.
MOSFET, N CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 17 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 27 / Rise Time ns = 34 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 45

Product Comparison

The three parts on the right have similar specifications to IRFR024NTRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

View Compare
IRFR024NTRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Active

1 (Unlimited)

2

SMD/SMT

EAR99

75mOhm

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET General Purpose Power

55V

MOSFET (Metal Oxide)

GULL WING

17A

R-PSSO-G2

1

1

45W Tc

Single

ENHANCEMENT MODE

38W

DRAIN

4.9 ns

N-Channel

SWITCHING

75m Ω @ 10A, 10V

4V @ 250μA

370pF @ 25V

17A Tc

20nC @ 10V

34ns

10V

±20V

27 ns

19 ns

17A

4V

TO-252AA

20V

55V

68A

55V

83 ns

175°C

4 V

2.52mm

6.7056mm

6.22mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-
IRFR120NCTRLPBF

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

48W Tc

-

-

-

-

-

N-Channel

-

210m Ω @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Ta

25nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

100V

-

-

-

-

-

-

-

-

-

IRFR024NTRPBF vs IRFR120NCTRLPBF
IRFR12N25DTRPBF

Infineon Technologies

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

144W Tc

-

-

-

-

-

N-Channel

-

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

250V

-

-

-

-

-

-

-

-

-

IRFR024NTRPBF vs IRFR12N25DTRPBF
IRFR13N15DTR

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

-

EAR99

-

-

FET General Purpose Power

150V

MOSFET (Metal Oxide)

GULL WING

14A

R-PSSO-G2

1

-

86W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

26ns

10V

±30V

-

-

14A

-

TO-252AA

-

-

56A

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

260

not_compliant

30

Not Qualified

SINGLE WITH BUILT-IN DIODE

0.18Ohm

130 mJ

IRFR024NTRPBF vs IRFR13N15DTR

Certification

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IRFR12N25DTRPBF

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IRFR024NTRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(2 Tab) DPAK T/R	126000	2000 $0.2352 4000 $0.2256
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(2 Tab) DPAK T/R	2000	25 $1.0289 50 $0.6859 100 $0.561 500 $0.4743 1000 $0.4182
IRFR024NTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 17A DPAK RoHS: Compliant	7329	1 $1 10 $0.885 100 $0.6917 500 $0.52312 1000 $0.42682
IRFR024NTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 17A DPAK RoHS: Compliant	7329	1 $1 10 $0.885 100 $0.6917 500 $0.52312 1000 $0.42682
IRFR024NTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 17A DPAK RoHS: Compliant	6000	2000 $0.37932
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	2000	10 $0.807 50 $0.538 100 $0.44
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	1258	10 $0.318 50 $0.278
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(2 Tab) DPAK T/R	730	1 $0.5804 10 $0.5071 25 $0.5048 100 $0.3656 250 $0.3646 500 $0.3216
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(2 Tab) DPAK T/R - RoHS: Compliant	0	2000 $0.2619 4000 $0.2619 8000 $0.2609 12000 $0.2599 20000 $0.2599
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(2 Tab) DPAK T/R (A RoHS: Compliant	0
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(2 Tab) DPAK T/R (A RoHS: Compliant	0	2000 $0.2729 4000 $0.2229 8000 $0.2049 12000 $0.1889 20000 $0.1749
IRFR024NTRPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 17A, D-PAK, Transistor Pol	363	1 $0.8 10 $0.659 25 $0.581 50 $0.503 100 $0.425 250 $0.397 500 $0.368 1000 $0.34
IRFR024NTRPBF. DISTI #	Infineon Technologies AG	PLANAR_MOSFETS ROHS COMPLIANT: YES	0	1 $0.287 2000 $0.287
IRFR024NTRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.075Oh RoHS: Compliant	0	2000 $0.414
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Single N-Channel 55 V 0.075 Ohm 20nC HEXFET Power RoHS: Compliant	1948	1 $0.41 100 $0.335 250 $0.32 500 $0.31 1000 $0.295
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Single N-Channel 55 V 0.075 Ohm 20nC HEXFET Power RoHS: Compliant	18000	2000 $0.265
IRFR024NTRPBF DISTI #	International Rectifier	RoHS: Not Compliant	35	1 $0.34 25 $0.32 100 $0.3 500 $0.29 1000 $0.28
IRFR024NTRPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 55V 16A 75mOhm 13.3nC RoHS: Compliant	7012	1 $0.8 10 $0.659 100 $0.425 1000 $0.34 2000 $0.287
IRFR024NTRPBF DISTI #	International Rectifier		901
IRFR024NTRPBF DISTI #	Infineon Technologies AG	HEXFET N-CH MOSFET 17A 55V DPAK, RL	300	100 $0.308 500 $0.277 1000 $0.246 2000 $0.208
IRFR024NTRPBF DISTI #	International Rectifier		867	1 $2 51 $1 201 $0.8
IRFR024NTRPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 55V, 16A, 38W,	1974	1 $0.6131 3 $0.3763 10 $0.3035 100 $0.2626
IRFR024NTRPBF DISTI #	International Rectifier	RoHS: Compliant	1995
IRFR024NTRPBF DISTI #	International Rectifier	INSTOCK	250
IRFR024NTRPBF DISTI #		INSTOCK	2135
IRFR024NTRPBF DISTI #	Infineon Technologies AG	INSTOCK	1735
IRFR024NTRPBF DISTI #	International Rectifier	INSTOCK	1303
IRFR024NTRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 55V, 17A, TO-252AA-3 RoHS: Compliant	3581	5 $0.521 25 $0.418 100 $0.314 250 $0.299 500 $0.283
IRFR024NTRPBF DISTI #	Infineon Technologies AG	55V,75m,17A,N-Channel Power MOSFET	1600	1 $0.5 100 $0.41 500 $0.37 1000 $0.36
IRFR024NTRPBF DISTI #	International Rectifier	RoHS (ship within 1day)	1084	1 $1.79 10 $1.03 50 $0.69 100 $0.52 500 $0.45 1000 $0.4
IRFR024NTRPBF DISTI #	INF	RoHS: Compliant	2880	2000 $0.4 2880 $0.3667
IRFR024NTRPBF DISTI #	INFINEON/IR	D-PAK (TO-252) RoHS: Compliant	7200	4000 $0.22 7200 $0.21
IRFR024NTRPBF DISTI #	Infineon Technologies AG	RoHS: Compliant	227439	2000 $0.82 227439 $0.7455
IRFR024NTRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 55V, 17A, TO-252AA-3 RoHS: Compliant	0	1 $1.28 10 $1.05 100 $0.672 1000 $0.538 2000 $0.455
IRFR024NTRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 55V, 17A, TO-252AA-3 RoHS: Compliant	1431	1 $1.28 10 $1.05 100 $0.672 1000 $0.538 2000 $0.455

IRFR024~~(18)~~
IRFR02~~(28)~~
IRFR0~~(54)~~
IRFR~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFR024NTRPBF

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