IRFR014

Vishay Siliconix IRFR014

Part Number:
IRFR014
Manufacturer:
Vishay Siliconix
Ventron No:
2488257-IRFR014
Description:
MOSFET N-CH 60V 7.7A DPAK
ECAD Model:
Datasheet:
IRFR014

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix IRFR014 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR014.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Supplier Device Package
    D-Pak
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    7.7A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 25W Tc
  • Element Configuration
    Single
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    200mOhm @ 4.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    7.7A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 10V
  • Rise Time
    50ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    7.7A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance
    300pF
  • Drain to Source Resistance
    200mOhm
  • Rds On Max
    200 mΩ
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFR014 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 300pF @ 25V.This device has a continuous drain current (ID) of [7.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 13 ns.MOSFETs have 200mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFR014 Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)


IRFR014 Applications
There are a lot of Vishay Siliconix
IRFR014 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFR014 More Descriptions
MOSFET; N-CHANNEL; 0.20 OHMS (MAX.); 60 V (MIN.); 7.7 A (MAX.) @ 25C DRAIN
Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) | MOSFET N-CH 60V 7.7A DPAK
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:7.7A; On-Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK; Drain Source On Resistance @ 10V:200mohm RoHS Compliant: No
MOSFET, N D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:7.7A; Resistance, Rds On:0.2ohm; Case Style:TO-252 (D-Pak); Termination Type:SMD; Current, Idm Pulse:31A; External Depth:10.5mm; External Length / Height:2.55mm; Power Dissipation:25W; Power, Pd:25W; SMD Marking:IRFR014; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:6.8mm
Product Comparison
The three parts on the right have similar specifications to IRFR014.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFR014
    IRFR014
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    D-Pak
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    7.7A
    1
    1
    2.5W Ta 25W Tc
    Single
    2.5W
    10 ns
    N-Channel
    200mOhm @ 4.6A, 10V
    4V @ 250μA
    300pF @ 25V
    7.7A Tc
    11nC @ 10V
    50ns
    60V
    10V
    ±20V
    19 ns
    13 ns
    7.7A
    20V
    60V
    300pF
    200mOhm
    200 mΩ
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR024NTRRPBF
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -
    Tape & Reel (TR)
    2004
    Discontinued
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    45W Tc
    -
    -
    -
    N-Channel
    75m Ω @ 10A, 10V
    4V @ 250μA
    370pF @ 25V
    17A Tc
    20nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SILICON
    HEXFET®
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, ULTRA LOW RESISTANCE
    FET General Purpose Power
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    175°C
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    17A
    0.075Ohm
    68A
    55V
    71 mJ
  • IRFR12N25DTRPBF
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    144W Tc
    -
    -
    -
    N-Channel
    260m Ω @ 8.4A, 10V
    5V @ 250μA
    810pF @ 25V
    14A Tc
    35nC @ 10V
    -
    250V
    10V
    ±30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFR13N15DTR
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    150V
    MOSFET (Metal Oxide)
    14A
    1
    -
    86W Tc
    -
    -
    -
    N-Channel
    180m Ω @ 8.3A, 10V
    5.5V @ 250μA
    620pF @ 25V
    14A Tc
    29nC @ 10V
    26ns
    -
    10V
    ±30V
    -
    -
    14A
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    SILICON
    HEXFET®
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    not_compliant
    30
    R-PSSO-G2
    Not Qualified
    -
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    TO-252AA
    -
    0.18Ohm
    56A
    -
    130 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.