Vishay Siliconix IRFR014
- Part Number:
- IRFR014
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488257-IRFR014
- Description:
- MOSFET N-CH 60V 7.7A DPAK
- Datasheet:
- IRFR014
Vishay Siliconix IRFR014 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR014.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating7.7A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 25W Tc
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs200mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.7A Tc
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time50ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)7.7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Input Capacitance300pF
- Drain to Source Resistance200mOhm
- Rds On Max200 mΩ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFR014 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 300pF @ 25V.This device has a continuous drain current (ID) of [7.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 13 ns.MOSFETs have 200mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFR014 Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFR014 Applications
There are a lot of Vishay Siliconix
IRFR014 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 300pF @ 25V.This device has a continuous drain current (ID) of [7.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 13 ns.MOSFETs have 200mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFR014 Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFR014 Applications
There are a lot of Vishay Siliconix
IRFR014 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFR014 More Descriptions
MOSFET; N-CHANNEL; 0.20 OHMS (MAX.); 60 V (MIN.); 7.7 A (MAX.) @ 25C DRAIN
Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) | MOSFET N-CH 60V 7.7A DPAK
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:7.7A; On-Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK; Drain Source On Resistance @ 10V:200mohm RoHS Compliant: No
MOSFET, N D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:7.7A; Resistance, Rds On:0.2ohm; Case Style:TO-252 (D-Pak); Termination Type:SMD; Current, Idm Pulse:31A; External Depth:10.5mm; External Length / Height:2.55mm; Power Dissipation:25W; Power, Pd:25W; SMD Marking:IRFR014; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:6.8mm
Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) | MOSFET N-CH 60V 7.7A DPAK
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:7.7A; On-Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK; Drain Source On Resistance @ 10V:200mohm RoHS Compliant: No
MOSFET, N D-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:7.7A; Resistance, Rds On:0.2ohm; Case Style:TO-252 (D-Pak); Termination Type:SMD; Current, Idm Pulse:31A; External Depth:10.5mm; External Length / Height:2.55mm; Power Dissipation:25W; Power, Pd:25W; SMD Marking:IRFR014; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:6.8mm
The three parts on the right have similar specifications to IRFR014.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)ConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFR014Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C60VMOSFET (Metal Oxide)7.7A112.5W Ta 25W TcSingle2.5W10 nsN-Channel200mOhm @ 4.6A, 10V4V @ 250μA300pF @ 25V7.7A Tc11nC @ 10V50ns60V10V±20V19 ns13 ns7.7A20V60V300pF200mOhm200 mΩNon-RoHS CompliantContains Lead----------------------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---Tape & Reel (TR)2004Discontinued1 (Unlimited)---MOSFET (Metal Oxide)-1-45W Tc---N-Channel75m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V-55V10V±20V--------ROHS3 Compliant-YESSILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G2Not Qualified175°CSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA17A0.075Ohm68A55V71 mJ
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---144W Tc---N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V------------HEXFET®------------------------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)--150VMOSFET (Metal Oxide)14A1-86W Tc---N-Channel180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V26ns-10V±30V--14A-----Non-RoHS CompliantContains Lead-SILICONHEXFET®e32EAR99Matte Tin (Sn) - with Nickel (Ni) barrier-FET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified-SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA-0.18Ohm56A-130 mJ
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