Infineon Technologies IRF1503SPBF

Name: IRF1503SPBF
Brand: Infineon Technologies
SKU: 3586701-IRF1503SPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1503SPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3586701-IRF1503SPBF

Description:: MOSFET N-CH 30V 75A D2PAK

ECAD Model:

Datasheet:: IRF1503SPbF, IRF1503LPbF

Specifications

Infineon Technologies IRF1503SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1503SPBF.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2010
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Resistance
3.3MOhm
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Current Rating
75A
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Power Dissipation
200W
Turn On Delay Time
17 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.3m Ω @ 140A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5730pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
200nC @ 10V
Rise Time
130ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Forward Voltage
1.3V
Fall Time (Typ)
48 ns
Turn-Off Delay Time
59 ns
Continuous Drain Current (ID)
75A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Nominal Vgs
4 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF1503SPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5730pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 59 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF1503SPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 59 ns

IRF1503SPBF Applications
There are a lot of Infineon Technologies
IRF1503SPBF applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IRF1503SPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 75A;D2Pak;PD 200W;VGS /-20
Single N-Channel 30 V 3.3 mOhm 200 nC HEXFET® Power Mosfet - D2PAK
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 30V, 190A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:190A; Resistance, Rds On:0.0033ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:960A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0033ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:4V

Product Comparison

The three parts on the right have similar specifications to IRF1503SPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Resistance

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Forward Voltage

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Number of Terminations

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Operating Mode

Case Connection

Transistor Application

Avalanche Energy Rating (Eas)

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Transistor Element Material

Terminal Position

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
IRF1503SPBF

Infineon Technologies

14 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-55°C~175°C TJ

Tube

HEXFET®

2010

Discontinued

1 (Unlimited)

EAR99

3.3MOhm

30V

MOSFET (Metal Oxide)

75A

1

200W Tc

Single

200W

17 ns

N-Channel

3.3m Ω @ 140A, 10V

4V @ 250μA

5730pF @ 25V

75A Tc

200nC @ 10V

130ns

10V

±20V

1.3V

48 ns

59 ns

75A

20V

30V

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1310NSTRRPBF

Infineon Technologies

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

Tape & Reel (TR)

HEXFET®

2004

Discontinued

1 (Unlimited)

EAR99

-

-

MOSFET (Metal Oxide)

-

1

3.8W Ta 160W Tc

Single

3.8W

11 ns

N-Channel

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

56ns

10V

±20V

-

40 ns

45 ns

42A

20V

100V

-

4.826mm

10.668mm

9.65mm

-

No

ROHS3 Compliant

-

e3

2

Matte Tin (Sn) - with Nickel (Ni) barrier

175°C

-55°C

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

GULL WING

260

30

R-PSSO-G2

ENHANCEMENT MODE

DRAIN

SWITCHING

420 mJ

-

-

-

-

-

-

-

-

-

-

-

IRF1503SPBF vs IRF1310NSTRRPBF
IRF1010ESTRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

200W Tc

-

-

-

N-Channel

12mOhm @ 50A, 10V

4V @ 250μA

3210pF @ 25V

84A Tc

130nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK

60V

-

-

-

-

-

-

-

-

-

IRF1503SPBF vs IRF1010ESTRR
IRF1310NSTRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

Obsolete

1 (Unlimited)

EAR99

-

-

MOSFET (Metal Oxide)

-

1

3.8W Ta 160W Tc

-

-

-

N-Channel

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

e3

2

Matte Tin (Sn) - with Nickel (Ni) barrier

-

-

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

GULL WING

260

30

R-PSSO-G2

ENHANCEMENT MODE

DRAIN

SWITCHING

420 mJ

-

100V

YES

SILICON

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

42A

0.036Ohm

140A

100V

IRF1503SPBF vs IRF1310NSTRR

Certification

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IRF1503~~(8)~~
IRF150~~(15)~~
IRF15~~(22)~~
IRF1~~(69)~~
IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRF1503SPBF DISTI #IRF1503SPBF	Infineon Technologies AG	MOSFET N-CH 30V 75A D2PAK RoHS: Compliant	0
IRF1503SPBF DISTI #IRF1503SPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 190A 3-Pin(2 Tab) D2PAK (Alt RoHS: Compliant	1230	1 $1.89 10 $1.49 25 $1.39 50 $1.29 100 $1.29 500 $1.29 1000 $1.29
IRF1503SPBF DISTI #IRF1503SPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 2.6 Mil RoHS: Compliant	0	3200 $3.65 6400 $3.577 16000 $3.468 32000 $3.322 80000 $3.103
IRF1503SPBF DISTI #IRF1503SPBF	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC RoHS: Compliant	0
IRF1503SPBF DISTI #IRF1503SPBF	International Rectifier	RoHS: Compliant	700
IRF1503SPBF DISTI #IRF1503SPBF	Infineon Technologies AG	RoHS: Compliant	1230	1000 $2.14 1230 $1.99

Infineon Technologies IRF1503SPBF

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