Infineon Technologies IRF1407STRLPBF

Name: IRF1407STRLPBF
Brand: Infineon Technologies
SKU: 2848985-IRF1407STRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1407STRLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848985-IRF1407STRLPBF

Description:: MOSFET N-CH 75V 100A D2PAK

ECAD Model:

Datasheet:: IRF1407STRLPBF

Specifications

Infineon Technologies IRF1407STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1407STRLPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
7.8mOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 200W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.8W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.8m Ω @ 78A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
250nC @ 10V
Rise Time
150ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
140 ns
Turn-Off Delay Time
150 ns
Continuous Drain Current (ID)
100A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
75A
Drain to Source Breakdown Voltage
75V
Pulsed Drain Current-Max (IDM)
520A
Dual Supply Voltage
75V
Nominal Vgs
4 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF1407STRLPBF Description
IRF1407STRLPBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies based on advanced processing techniques. Due to its low on-state resistance, fast switching speed, and ruggedized device design, power MOSFET IRF1407STRLPBF is well suited for high-efficiency synchronous rectification in SMPS, uninterruptible power supply, and other applications.

IRF1407STRLPBF Features
Low on-state resistance
Fast switching speed
High avalanche ruggedness
Available in the D2PAK package
Advanced processing techniques

IRF1407STRLPBF Applications
Synchronous rectification
Uninterruptible power supplies
Power switching with high speed
Hard switched circuits with high frequency

IRF1407STRLPBF More Descriptions

Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
MOSFET, N, 75V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:70A; Cont Current Id @ 25°C:100A; Current Id Max:100A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:3.8W; Pulse Current Idm:520A; Rth:0.75; Termination Type:SMD; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Product Comparison

The three parts on the right have similar specifications to IRF1407STRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Qualification Status

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRF1407STRLPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Active

1 (Unlimited)

2

SMD/SMT

EAR99

7.8mOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 200W Tc

ENHANCEMENT MODE

3.8W

DRAIN

11 ns

N-Channel

SWITCHING

7.8m Ω @ 78A, 10V

4V @ 250μA

5600pF @ 25V

100A Tc

250nC @ 10V

150ns

10V

±20V

140 ns

150 ns

100A

4V

20V

75A

75V

520A

75V

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
IRF1010ESTRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

200W Tc

-

-

-

-

N-Channel

-

12mOhm @ 50A, 10V

4V @ 250μA

3210pF @ 25V

84A Tc

130nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

D2PAK

60V

-

-

-

-

-

IRF1407STRLPBF vs IRF1010ESTRR
IRF1010NSTRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

e3

Obsolete

1 (Unlimited)

2

-

EAR99

-

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

180W Tc

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

11m Ω @ 43A, 10V

4V @ 250μA

3210pF @ 25V

85A Tc

120nC @ 10V

-

10V

±20V

-

-

-

-

-

75A

-

290A

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

55V

YES

Not Qualified

0.011Ohm

55V

250 mJ

IRF1407STRLPBF vs IRF1010NSTRR
IRF1405SPBF

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

200W Tc

-

-

-

-

N-Channel

-

5.3mOhm @ 101A, 10V

4V @ 250μA

5.48pF @ 25V

131A Tc

260nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

D2PAK

55V

-

-

-

-

-

IRF1407STRLPBF vs IRF1405SPBF

Certification

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IRF1407STRLPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 100A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	240	1 $1.8441 10 $1.6354 25 $1.629 100 $1.3743 250 $1.2961
IRF1407STRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 75V 100A D2PAK RoHS: Compliant	1535	1 $2.96 10 $2.686 100 $2.1891
IRF1407STRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 75V 100A D2PAK RoHS: Compliant	1535	1 $2.96 10 $2.686 100 $2.1891
IRF1407STRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 75V 100A D2PAK RoHS: Compliant	800	800 $1.53758
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 100A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	3200	800 $0.8592
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 100A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	240	8 $1.8441 10 $1.6354 25 $1.629 100 $1.3743
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	14	1 $1.69 8 $1.59 20 $1.49 40 $1.49 100 $1.29 200 $1.19 400 $1.19
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	1600	800 $1.0709 1600 $0.8759 3200 $0.8029 4800 $0.7409 8000 $0.6879
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $0.9999 1600 $0.9969 3200 $0.9949 4800 $0.9919 8000 $0.9899
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 75V 100A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0
IRF1407STRLPBF DISTI #	Infineon Technologies AG	MOSFET Transistor, N Channel, 100 A, 75 V, 7.8 moh	3064	1 $2.48 10 $2.13 100 $1.74 500 $1.54
IRF1407STRLPBF. DISTI #	Infineon Technologies AG	Transistor Polarity:N Channel, Continuous Drain C	0
IRF1407STRLPBF DISTI #	Infineon Technologies AG	IRF1407STRLPBF N-channel MOSFET Transistor, 100 A RoHS: Compliant	0	800 $3.89
IRF1407STRLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 75V 100A 7.8mOhm 160nC RoHS: Compliant	528	1 $2.35 10 $2 100 $1.6 500 $1.4 800 $1.16
IRF1407STRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 75V 100A D2PAK, RL	1512	40 $0.623
IRF1407STRLPBF DISTI #	International Rectifier	INSTOCK	442
IRF1407STRLPBF DISTI #	INFINEON/IR	D2-PAK (TO-263) RoHS: Compliant	1152	800 $1.07 1152 $1
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 100A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	589	800 $1.07
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 100A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	240	10 $1.6354 25 $1.629 100 $1.3743
IRF1407STRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 100A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	3200	800 $1.26 1600 $0.968 2400 $0.898
IRF1407STRLPBF DISTI #	Infineon Technologies AG	MOSFET, N, 75V, D2-PAK RoHS: Compliant	3054	1 $3.72 10 $3.17 100 $2.54 500 $2.22 800 $1.84
IRF1407STRLPBF DISTI #	Infineon Technologies AG	MOSFET, N, 75V, D2-PAK RoHS: Compliant	3064	5 $1.55 25 $1.39 100 $1.23 250 $1.06 500 $0.894

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Infineon Technologies IRF1407STRLPBF

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