IRF1405ZSTRLPBF

Infineon Technologies IRF1405ZSTRLPBF

Part Number:
IRF1405ZSTRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2849778-IRF1405ZSTRLPBF
Description:
MOSFET N-CH 55V 75A D2PAK
ECAD Model:
Datasheet:
IRF1405Z(S,L)PbF

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Specifications
Infineon Technologies IRF1405ZSTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405ZSTRLPBF.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    230W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    230W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.9m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4780pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    180nC @ 10V
  • Rise Time
    110ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    82 ns
  • Turn-Off Delay Time
    48 ns
  • Continuous Drain Current (ID)
    75A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0049Ohm
  • Drain to Source Breakdown Voltage
    55V
  • Pulsed Drain Current-Max (IDM)
    600A
  • Avalanche Energy Rating (Eas)
    420 mJ
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF1405ZSTRLPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 420 mJ.A device's maximum input capacitance is 4780pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 48 ns.Its maximum pulsed drain current is 600A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF1405ZSTRLPBF Features
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.


IRF1405ZSTRLPBF Applications
There are a lot of Infineon Technologies
IRF1405ZSTRLPBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF1405ZSTRLPBF More Descriptions
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 55V 150A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Single N-Channel 55 V 4.9 mOhm 180 nC HEXFET® Power Mosfet - TO-262
N CH MOSFET, HEXFET AUTOMOTIVE, 55V 150A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF1405ZSTRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Surface Mount
    Terminal Position
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    View Compare
  • IRF1405ZSTRLPBF
    IRF1405ZSTRLPBF
    15 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2008
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    230W Tc
    Single
    ENHANCEMENT MODE
    230W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    4.9m Ω @ 75A, 10V
    4V @ 250μA
    4780pF @ 25V
    75A Tc
    180nC @ 10V
    110ns
    10V
    ±20V
    82 ns
    48 ns
    75A
    20V
    0.0049Ohm
    55V
    600A
    420 mJ
    4.826mm
    10.668mm
    9.65mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1310NSTRRPBF
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    3.8W Ta 160W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    56ns
    10V
    ±20V
    40 ns
    45 ns
    42A
    20V
    -
    100V
    -
    420 mJ
    4.826mm
    10.668mm
    9.65mm
    No
    ROHS3 Compliant
    -
    175°C
    -55°C
    -
    -
    -
    -
    -
    -
    -
  • IRF1405STRR
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    200W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    5.3m Ω @ 101A, 10V
    4V @ 250μA
    5480pF @ 25V
    131A Tc
    260nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    0.0053Ohm
    -
    680A
    590 mJ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    55V
    75A
    55V
  • IRF1010NSTRR
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    180W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    11m Ω @ 43A, 10V
    4V @ 250μA
    3210pF @ 25V
    85A Tc
    120nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    0.011Ohm
    -
    290A
    250 mJ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    55V
    75A
    55V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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