Infineon Technologies IRF1405ZSTRLPBF
- Part Number:
- IRF1405ZSTRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849778-IRF1405ZSTRLPBF
- Description:
- MOSFET N-CH 55V 75A D2PAK
- Datasheet:
- IRF1405Z(S,L)PbF
Infineon Technologies IRF1405ZSTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405ZSTRLPBF.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2008
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max230W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation230W
- Case ConnectionDRAIN
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.9m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4780pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Rise Time110ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)82 ns
- Turn-Off Delay Time48 ns
- Continuous Drain Current (ID)75A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0049Ohm
- Drain to Source Breakdown Voltage55V
- Pulsed Drain Current-Max (IDM)600A
- Avalanche Energy Rating (Eas)420 mJ
- Height4.826mm
- Length10.668mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF1405ZSTRLPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 420 mJ.A device's maximum input capacitance is 4780pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 48 ns.Its maximum pulsed drain current is 600A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF1405ZSTRLPBF Features
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.
IRF1405ZSTRLPBF Applications
There are a lot of Infineon Technologies
IRF1405ZSTRLPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 420 mJ.A device's maximum input capacitance is 4780pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 48 ns.Its maximum pulsed drain current is 600A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF1405ZSTRLPBF Features
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.
IRF1405ZSTRLPBF Applications
There are a lot of Infineon Technologies
IRF1405ZSTRLPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF1405ZSTRLPBF More Descriptions
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 55V 150A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Single N-Channel 55 V 4.9 mOhm 180 nC HEXFET® Power Mosfet - TO-262
N CH MOSFET, HEXFET AUTOMOTIVE, 55V 150A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 55V 150A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Single N-Channel 55 V 4.9 mOhm 180 nC HEXFET® Power Mosfet - TO-262
N CH MOSFET, HEXFET AUTOMOTIVE, 55V 150A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF1405ZSTRLPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureSurface MountTerminal PositionQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
-
IRF1405ZSTRLPBF15 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2008e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)GULL WING26030R-PSSO-G21230W TcSingleENHANCEMENT MODE230WDRAIN18 nsN-ChannelSWITCHING4.9m Ω @ 75A, 10V4V @ 250μA4780pF @ 25V75A Tc180nC @ 10V110ns10V±20V82 ns48 ns75A20V0.0049Ohm55V600A420 mJ4.826mm10.668mm9.65mmNoROHS3 CompliantLead Free----------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--Tape & Reel (TR)HEXFET®2004e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)GULL WING26030R-PSSO-G213.8W Ta 160W TcSingleENHANCEMENT MODE3.8WDRAIN11 nsN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V56ns10V±20V40 ns45 ns42A20V-100V-420 mJ4.826mm10.668mm9.65mmNoROHS3 Compliant-175°C-55°C-------
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2004e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)GULL WING26030R-PSSO-G21200W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING5.3m Ω @ 101A, 10V4V @ 250μA5480pF @ 25V131A Tc260nC @ 10V-10V±20V----0.0053Ohm-680A590 mJ----Non-RoHS Compliant---YESSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE55V75A55V
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2002e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)GULL WING26030R-PSSO-G21180W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V-10V±20V----0.011Ohm-290A250 mJ----Non-RoHS Compliant---YESSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE55V75A55V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
18 February 2024
L6599DTR Technical Parameters, Working Principle, Characteristics and L6599DTR vs L6599D
Ⅰ. Introduction to L6599DTRⅡ. Technical parameters of L6599DTRⅢ. Working principle of L6599DTRⅣ. Block diagram of L6599DTRⅤ. What are the characteristics of L6599DTR?Ⅵ. How does the output current protection... -
18 February 2024
LNK364PN Manufacturer, Package, Applications and Specifications
Ⅰ. What is LNK364PN?Ⅱ. Manufacturer of LNK364PNⅢ. Package of LNK364PNⅣ. How to measure the quality of LNK364PN?Ⅴ. Pins and functions of LNK364PNⅥ. Applications of LNK364PNⅦ. Specifications of LNK364PNⅧ.... -
19 February 2024
SG3525AN Controller: Specifications, Application Circuit and Other Details
Ⅰ. Overview of SG3525ANⅡ. Specifications of SG3525ANⅢ. Application circuit of SG3525ANⅣ. How to evaluate the efficiency of SG3525AN controller?Ⅴ. Recommended operating conditions for SG3525ANⅥ. What are the advantages... -
19 February 2024
SS14 Schottky Power Diode Function, Applications, Working Principle and Features
Ⅰ. What is a Schottky diode?Ⅱ. SS14 overviewⅢ. Common brands of SS14 diodeⅣ. Typical performance characteristics of SS14 diodeⅤ. The function of SS14 diodeⅥ. What are the applications...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.