IRF1405ZL-7PPBF

Infineon Technologies IRF1405ZL-7PPBF

Part Number:
IRF1405ZL-7PPBF
Manufacturer:
Infineon Technologies
Ventron No:
2493793-IRF1405ZL-7PPBF
Description:
MOSFET N-CH 55V 150A TO263CA-7
ECAD Model:
Datasheet:
IRF1405ZL-7PPBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRF1405ZL-7PPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405ZL-7PPBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-263-7 (Straight Leads)
  • Number of Pins
    7
  • Supplier Device Package
    TO-263CA-7
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2013
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    230W Tc
  • Power Dissipation
    230W
  • Turn On Delay Time
    16 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    4.9mOhm @ 88A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 150μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5360pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    230nC @ 10V
  • Rise Time
    110ns
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    82 ns
  • Turn-Off Delay Time
    48 ns
  • Continuous Drain Current (ID)
    120A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    55V
  • Input Capacitance
    5.36nF
  • Drain to Source Resistance
    4.9mOhm
  • Rds On Max
    4.9 mΩ
  • Length
    10.668mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRF1405ZL-7PPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5360pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120A.With a drain-source breakdown voltage of 55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 48 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 4.9mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF1405ZL-7PPBF Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
single MOSFETs transistor is 4.9mOhm
a 55V drain to source voltage (Vdss)


IRF1405ZL-7PPBF Applications
There are a lot of Infineon Technologies
IRF1405ZL-7PPBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF1405ZL-7PPBF More Descriptions
Murata Electronics Multilayer Ceramic Capacitors MLCC - SMDSMT 0805 330pF 250volts C0G 5%
Transistor MOSFET N-Ch. 120A/55V TO263CA-7 IRF1405ZL-7PPBF
55V Single N-Channel HEXFET Power MOSFET in a 7-Lead TO-262 package
Product Comparison
The three parts on the right have similar specifications to IRF1405ZL-7PPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Length
    Radiation Hardening
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRF1405ZL-7PPBF
    IRF1405ZL-7PPBF
    Through Hole
    Through Hole
    TO-263-7 (Straight Leads)
    7
    TO-263CA-7
    -55°C~175°C TJ
    Tube
    HEXFET®
    2013
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    230W Tc
    230W
    16 ns
    N-Channel
    4.9mOhm @ 88A, 10V
    4V @ 150μA
    5360pF @ 25V
    120A Tc
    230nC @ 10V
    110ns
    55V
    10V
    ±20V
    82 ns
    48 ns
    120A
    20V
    55V
    5.36nF
    4.9mOhm
    4.9 mΩ
    10.668mm
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1104STRL
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    2.4W Ta 170W Tc
    -
    -
    N-Channel
    9mOhm @ 60A, 10V
    4V @ 250μA
    2900pF @ 25V
    100A Tc
    93nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1405STRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    200W Tc
    -
    -
    N-Channel
    5.3m Ω @ 101A, 10V
    4V @ 250μA
    5480pF @ 25V
    131A Tc
    260nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    YES
    SILICON
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    75A
    0.0053Ohm
    680A
    55V
    590 mJ
  • IRF1310NSTRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    3.8W Ta 160W Tc
    -
    -
    N-Channel
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    YES
    SILICON
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    42A
    0.036Ohm
    140A
    100V
    420 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.