Infineon Technologies IRF1405ZL-7PPBF
- Part Number:
- IRF1405ZL-7PPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493793-IRF1405ZL-7PPBF
- Description:
- MOSFET N-CH 55V 150A TO263CA-7
- Datasheet:
- IRF1405ZL-7PPBF
Infineon Technologies IRF1405ZL-7PPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405ZL-7PPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-263-7 (Straight Leads)
- Number of Pins7
- Supplier Device PackageTO-263CA-7
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max230W Tc
- Power Dissipation230W
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4.9mOhm @ 88A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds5360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs230nC @ 10V
- Rise Time110ns
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)82 ns
- Turn-Off Delay Time48 ns
- Continuous Drain Current (ID)120A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Input Capacitance5.36nF
- Drain to Source Resistance4.9mOhm
- Rds On Max4.9 mΩ
- Length10.668mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRF1405ZL-7PPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5360pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120A.With a drain-source breakdown voltage of 55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 48 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 4.9mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF1405ZL-7PPBF Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
single MOSFETs transistor is 4.9mOhm
a 55V drain to source voltage (Vdss)
IRF1405ZL-7PPBF Applications
There are a lot of Infineon Technologies
IRF1405ZL-7PPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5360pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 120A.With a drain-source breakdown voltage of 55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 48 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 4.9mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF1405ZL-7PPBF Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
single MOSFETs transistor is 4.9mOhm
a 55V drain to source voltage (Vdss)
IRF1405ZL-7PPBF Applications
There are a lot of Infineon Technologies
IRF1405ZL-7PPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF1405ZL-7PPBF More Descriptions
Murata Electronics Multilayer Ceramic Capacitors MLCC - SMDSMT 0805 330pF 250volts C0G 5%
Transistor MOSFET N-Ch. 120A/55V TO263CA-7 IRF1405ZL-7PPBF
55V Single N-Channel HEXFET Power MOSFET in a 7-Lead TO-262 package
Transistor MOSFET N-Ch. 120A/55V TO263CA-7 IRF1405ZL-7PPBF
55V Single N-Channel HEXFET Power MOSFET in a 7-Lead TO-262 package
The three parts on the right have similar specifications to IRF1405ZL-7PPBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxLengthRadiation HardeningRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
-
IRF1405ZL-7PPBFThrough HoleThrough HoleTO-263-7 (Straight Leads)7TO-263CA-7-55°C~175°C TJTubeHEXFET®2013Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)230W Tc230W16 nsN-Channel4.9mOhm @ 88A, 10V4V @ 150μA5360pF @ 25V120A Tc230nC @ 10V110ns55V10V±20V82 ns48 ns120A20V55V5.36nF4.9mOhm4.9 mΩ10.668mmNoRoHS Compliant-------------------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)--MOSFET (Metal Oxide)2.4W Ta 170W Tc--N-Channel9mOhm @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V-40V10V±20V----------Non-RoHS Compliant------------------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)--MOSFET (Metal Oxide)200W Tc--N-Channel5.3m Ω @ 101A, 10V4V @ 250μA5480pF @ 25V131A Tc260nC @ 10V-55V10V±20V----------Non-RoHS CompliantYESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING75A0.0053Ohm680A55V590 mJ
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)--MOSFET (Metal Oxide)3.8W Ta 160W Tc--N-Channel36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-100V10V±20V----------Non-RoHS CompliantYESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING42A0.036Ohm140A100V420 mJ
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
06 March 2024
LIS3DHTR Alternatives, Specifications, Dimensions and Package
Ⅰ. What is LIS3DHTR?Ⅱ. Specifications of LIS3DHTRⅢ. Schematic diagram and working principle of LIS3DHTRⅣ. How to use LIS3DHTR?Ⅴ. Electrical characteristics of LIS3DHTRⅥ. What is the function of FIFO... -
07 March 2024
AMS1117-3.3 Voltage Regulator Instructions for Use: From Principle to Application
Ⅰ. Introduction to AMS1117-3.3Ⅱ. Symbol, footprint and pin configuration of AMS1117-3.3Ⅲ. What are the characteristics of AMS1117-3.3?Ⅳ. How does AMS1117-3.3 work?Ⅴ. Application cases of AMS1117-3.3Ⅵ. How to wire... -
07 March 2024
BTS50085-1TMA Alternatives, Advantages, Usage and Other Details
Ⅰ. Overview of BTS50085-1TMAⅡ. Technical parameters of BTS50085-1TMAⅢ. BTS50085-1TMA input circuitⅣ. What are the advantages of BTS50085-1TMA compared with other similar products?Ⅴ. Usage of BTS50085-1TMAⅥ. How to install... -
08 March 2024
A Complete Guide to the TP4056 Battery Charger Module
Ⅰ. What is TP4056?Ⅱ. Block diagram of TP4056Ⅲ. Main parameters of TP4056Ⅳ. Pins and functions of TP4056Ⅴ. TP4056 charging circuit diagram explanationⅥ. Battery charging process of TP4056Ⅶ. Application...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.