Infineon Technologies IRF1405Z
- Part Number:
- IRF1405Z
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492812-IRF1405Z
- Description:
- MOSFET N-CH 55V 75A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF1405Z(S,L)
Infineon Technologies IRF1405Z technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405Z.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max230W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.9m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4780pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.0049Ohm
- Pulsed Drain Current-Max (IDM)600A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)420 mJ
- RoHS StatusNon-RoHS Compliant
IRF1405Z Description
The StrongIRFETTM power MOSFET family is designed for high current capability and low RDS(on). For low frequency applications that demand performance and robustness, the devices are perfect. A wide range of applications, such as DC motors, battery management systems, inverters, and DC-DC converters, are covered by the extensive portfolio.
IRF1405Z Features
High-current rating
Industry standard through-hole power package
Product qualification according to JEDEC standard
Optimized for broadest availability from distribution partners
IRF1405Z Applications
Automotive
Enterprise systems
Communications equipment
The StrongIRFETTM power MOSFET family is designed for high current capability and low RDS(on). For low frequency applications that demand performance and robustness, the devices are perfect. A wide range of applications, such as DC motors, battery management systems, inverters, and DC-DC converters, are covered by the extensive portfolio.
IRF1405Z Features
High-current rating
Industry standard through-hole power package
Product qualification according to JEDEC standard
Optimized for broadest availability from distribution partners
IRF1405Z Applications
Automotive
Enterprise systems
Communications equipment
The three parts on the right have similar specifications to IRF1405Z.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsJESD-609 CodeECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryTerminal FormElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningQualification StatusSupplier Device PackageView Compare
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IRF1405ZThrough HoleTO-220-3NOSILICON-55°C~175°C TJTubeHEXFET®2003Obsolete1 (Unlimited)3AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE230W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.9m Ω @ 75A, 10V4V @ 250μA4780pF @ 25V75A Tc180nC @ 10V55V10V±20VTO-220AB75A0.0049Ohm600A55V420 mJNon-RoHS Compliant------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---Tape & Reel (TR)HEXFET®2004Discontinued1 (Unlimited)2AVALANCHE RATED, HIGH RELIABILITYMOSFET (Metal Oxide)-26030R-PSSO-G21-3.8W Ta 160W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-10V±20V-----420 mJROHS3 CompliantSurface Mount3e3EAR99Matte Tin (Sn) - with Nickel (Ni) barrier175°C-55°CFET General Purpose PowerGULL WINGSingle3.8W11 ns56ns40 ns45 ns42A20V100V4.826mm10.668mm9.65mmNo--
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)2AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEMOSFET (Metal Oxide)SINGLE26030R-PSSO-G21SINGLE WITH BUILT-IN DIODE200W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5.3m Ω @ 101A, 10V4V @ 250μA5480pF @ 25V131A Tc260nC @ 10V55V10V±20V-75A0.0053Ohm680A55V590 mJNon-RoHS Compliant--e3EAR99Matte Tin (Sn) - with Nickel (Ni) barrier--FET General Purpose PowerGULL WING-------------Not Qualified-
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------200W Tc--N-Channel-12mOhm @ 50A, 10V4V @ 250μA3210pF @ 25V84A Tc130nC @ 10V60V10V±20V------Non-RoHS Compliant-----------------------D2PAK
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