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IRF1405PBF

Infineon Technologies IRF1405PBF

Part Number:
IRF1405PBF
Manufacturer:
Infineon Technologies
Ventron No:
2483251-IRF1405PBF
Description:
MOSFET N-CH 55V 169A TO-220AB
ECAD Model:
Datasheet:
IRF1405PBF

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Specifications
Infineon Technologies IRF1405PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Resistance
    5.3mOhm
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    169A
  • Lead Pitch
    2.54mm
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    330W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    330W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.3m Ω @ 101A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5480pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    169A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    260nC @ 10V
  • Rise Time
    190ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    110 ns
  • Turn-Off Delay Time
    130 ns
  • Continuous Drain Current (ID)
    169A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    75A
  • Drain to Source Breakdown Voltage
    55V
  • Pulsed Drain Current-Max (IDM)
    680A
  • Dual Supply Voltage
    55V
  • Avalanche Energy Rating (Eas)
    560 mJ
  • Recovery Time
    130 ns
  • Max Junction Temperature (Tj)
    175°C
  • Nominal Vgs
    4 V
  • Height
    19.8mm
  • Length
    10.668mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF1405PBF Description
Modern processing methods are used in this Stripe Planar design of HEXFET? Power MOSFETs to produce extraordinarily low on-resistance per silicon area. This HEXFET power MOSFET also has increased repeating avalanche rating, a rapid switching speed, and a junction operating temperature of 175??C. These advantages work together to make this design a very effective and dependable tool for usage in a range of applications.

IRF1405PBF Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175??C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

IRF1405PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
Product Comparison
The three parts on the right have similar specifications to IRF1405PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Lead Pitch
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRF1405PBF
    IRF1405PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    5.3mOhm
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    169A
    2.54mm
    1
    1
    330W Tc
    Single
    ENHANCEMENT MODE
    330W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    5.3m Ω @ 101A, 10V
    4V @ 250μA
    5480pF @ 25V
    169A Tc
    260nC @ 10V
    190ns
    10V
    ±20V
    110 ns
    130 ns
    169A
    4V
    TO-220AB
    20V
    75A
    55V
    680A
    55V
    560 mJ
    130 ns
    175°C
    4 V
    19.8mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1010ESTRR
    IRF1010ESTRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    200W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    12mOhm @ 50A, 10V
    4V @ 250μA
    3210pF @ 25V
    84A Tc
    130nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    D2PAK
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF1405PBF vs IRF1010ESTRR
  • IRF1310NSTRR
    IRF1310NSTRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    -
    3.8W Ta 160W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    42A
    -
    140A
    -
    420 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    100V
    YES
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    0.036Ohm
    100V
    IRF1405PBF vs IRF1310NSTRR
  • IRF1010NSTRR
    IRF1010NSTRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    -
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    -
    180W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    11m Ω @ 43A, 10V
    4V @ 250μA
    3210pF @ 25V
    85A Tc
    120nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    75A
    -
    290A
    -
    250 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    55V
    YES
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    0.011Ohm
    55V
    IRF1405PBF vs IRF1010NSTRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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