Infineon Technologies IRF1404ZSTRRPBF
- Part Number:
- IRF1404ZSTRRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493117-IRF1404ZSTRRPBF
- Description:
- MOSFET N-CH 40V 75A D2PAK
- Datasheet:
- IRF1404ZSTRRPBF
Infineon Technologies IRF1404ZSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404ZSTRRPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max200W Tc
- Power Dissipation200W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.7mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds4340pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Rise Time110ns
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)58 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)190A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage40V
- Input Capacitance4.34nF
- Drain to Source Resistance3.7mOhm
- Rds On Max3.7 mΩ
- Height4.826mm
- Length10.668mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRF1404ZSTRRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4340pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 190A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.This device has a drain-to-source resistance of 3.7mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF1404ZSTRRPBF Features
a continuous drain current (ID) of 190A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 36 ns
single MOSFETs transistor is 3.7mOhm
a 40V drain to source voltage (Vdss)
IRF1404ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF1404ZSTRRPBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4340pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 190A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.This device has a drain-to-source resistance of 3.7mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF1404ZSTRRPBF Features
a continuous drain current (ID) of 190A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 36 ns
single MOSFETs transistor is 3.7mOhm
a 40V drain to source voltage (Vdss)
IRF1404ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF1404ZSTRRPBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF1404ZSTRRPBF More Descriptions
Trans MOSFET N-CH 40V 190A 3-Pin(2 Tab) D2PAK T/R
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 40V, 190A, 3.7 MOHM, 100 NC QG, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:190A; On Resistance, Rds(on):3.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 40V, 190A, 3.7 MOHM, 100 NC QG, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:190A; On Resistance, Rds(on):3.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF1404ZSTRRPBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeElement ConfigurationOperating ModeCase ConnectionTransistor ApplicationThreshold VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsREACH SVHCLead FreeSurface MountTerminal PositionQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
-
IRF1404ZSTRRPBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2012Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)1200W Tc200W18 nsN-Channel3.7mOhm @ 75A, 10V4V @ 150μA4340pF @ 25V180A Tc150nC @ 10V110ns40V10V±20V58 ns36 ns190A20V40V4.34nF3.7mOhm3.7 mΩ4.826mm10.668mm9.65mmNoRoHS Compliant------------------------------
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTubeHEXFET®2003Discontinued1 (Unlimited)--MOSFET (Metal Oxide)1230W Tc230W18 nsN-Channel4.9m Ω @ 75A, 10V4V @ 250μA4780pF @ 25V75A Tc180nC @ 10V110ns-10V±20V82 ns48 ns75A20V55V---4.826mm10.668mm9.65mmNoROHS3 CompliantSILICONe32EAR994.9MOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEFET General Purpose PowerGULL WING26030R-PSSO-G2SingleENHANCEMENT MODEDRAINSWITCHING4V600A420 mJ4 VNo SVHCLead Free-------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-2.4W Ta 170W Tc--N-Channel9mOhm @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V-40V10V±20V------------Non-RoHS Compliant-----------------------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)--MOSFET (Metal Oxide)1180W Tc--N-Channel11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V-55V10V±20V------------Non-RoHS CompliantSILICONe32EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerGULL WING26030R-PSSO-G2-ENHANCEMENT MODEDRAINSWITCHING-290A250 mJ---YESSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE75A0.011Ohm55V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
13 October 2023
Universal Logic Gate Chip SN7406N: Equivalent, Working Principle and Package
Ⅰ. What is SN7406N?Ⅱ. Symbol, footprint and pinout of SN7406NⅢ. Technical parameters of SN7406NⅣ. Features of SN7406NⅤ. Working principle of SN7406NⅥ. Dimensions and package of SN7406NⅦ. Manufacturer of... -
13 October 2023
LM3481MM NOPB Converter Features, Pin Configuraiton and Other Details
Ⅰ. Overview of LM3481MM/NOPBⅡ. Symbol and footprint of LM3481MM/NOPBⅢ. Technical parameters of LM3481MM/NOPBⅣ. Features of LM3481MM/NOPBⅤ. Pin configuration of LM3481MM/NOPBⅥ. Application of LM3481MM/NOPBⅦ. How to improve the efficiency... -
16 October 2023
What Is H1102N Pulse Ethernet Transformer?
Ⅰ. What is a transformer?Ⅱ. Overview of H1102NLⅢ. Pin configuration, symbol and footprint of H1102NLⅣ. Technical parameters of H1102NLⅤ. Features of H1102NLⅥ. Working principle of H1102NLⅦ. Dimensions and... -
16 October 2023
BD139 Transistor Equivalent, Technical Parameters and Applications
Ⅰ. Overview of BD139Ⅱ. BD139 symbol, footprint and pin configurationⅢ. Technical parameters of BD139Ⅳ. Features of BD139Ⅴ. Working principle of BD139 transistorⅥ. Circuit of BD139 transistor power amplifierⅦ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.