IRF1404ZSTRRPBF

Infineon Technologies IRF1404ZSTRRPBF

Part Number:
IRF1404ZSTRRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2493117-IRF1404ZSTRRPBF
Description:
MOSFET N-CH 40V 75A D2PAK
ECAD Model:
Datasheet:
IRF1404ZSTRRPBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRF1404ZSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404ZSTRRPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2012
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    200W Tc
  • Power Dissipation
    200W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3.7mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 150μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4340pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    180A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    150nC @ 10V
  • Rise Time
    110ns
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    58 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    190A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    40V
  • Input Capacitance
    4.34nF
  • Drain to Source Resistance
    3.7mOhm
  • Rds On Max
    3.7 mΩ
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRF1404ZSTRRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4340pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 190A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 36 ns.This device has a drain-to-source resistance of 3.7mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 40V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF1404ZSTRRPBF Features
a continuous drain current (ID) of 190A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 36 ns
single MOSFETs transistor is 3.7mOhm
a 40V drain to source voltage (Vdss)


IRF1404ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF1404ZSTRRPBF applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF1404ZSTRRPBF More Descriptions
Trans MOSFET N-CH 40V 190A 3-Pin(2 Tab) D2PAK T/R
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 40V, 190A, 3.7 MOHM, 100 NC QG, D2-PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:190A; On Resistance, Rds(on):3.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF1404ZSTRRPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Element Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    REACH SVHC
    Lead Free
    Surface Mount
    Terminal Position
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRF1404ZSTRRPBF
    IRF1404ZSTRRPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2012
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    200W Tc
    200W
    18 ns
    N-Channel
    3.7mOhm @ 75A, 10V
    4V @ 150μA
    4340pF @ 25V
    180A Tc
    150nC @ 10V
    110ns
    40V
    10V
    ±20V
    58 ns
    36 ns
    190A
    20V
    40V
    4.34nF
    3.7mOhm
    3.7 mΩ
    4.826mm
    10.668mm
    9.65mm
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1405ZSPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Discontinued
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    230W Tc
    230W
    18 ns
    N-Channel
    4.9m Ω @ 75A, 10V
    4V @ 250μA
    4780pF @ 25V
    75A Tc
    180nC @ 10V
    110ns
    -
    10V
    ±20V
    82 ns
    48 ns
    75A
    20V
    55V
    -
    -
    -
    4.826mm
    10.668mm
    9.65mm
    No
    ROHS3 Compliant
    SILICON
    e3
    2
    EAR99
    4.9MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    GULL WING
    260
    30
    R-PSSO-G2
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    4V
    600A
    420 mJ
    4 V
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • IRF1104STRL
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    2.4W Ta 170W Tc
    -
    -
    N-Channel
    9mOhm @ 60A, 10V
    4V @ 250μA
    2900pF @ 25V
    100A Tc
    93nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1010NSTRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    180W Tc
    -
    -
    N-Channel
    11m Ω @ 43A, 10V
    4V @ 250μA
    3210pF @ 25V
    85A Tc
    120nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    SILICON
    e3
    2
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    GULL WING
    260
    30
    R-PSSO-G2
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    290A
    250 mJ
    -
    -
    -
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    75A
    0.011Ohm
    55V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.