Infineon Technologies IRF1404ZSTRR
- Part Number:
- IRF1404ZSTRR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492667-IRF1404ZSTRR
- Description:
- MOSFET N-CH 40V 75A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF1404ZSTRR
Infineon Technologies IRF1404ZSTRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404ZSTRR.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max220W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.7m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4340pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs150nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusNon-RoHS Compliant
IRF1404ZSTRR Overview
A device's maximal input capacitance is 4340pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF1404ZSTRR Features
a 40V drain to source voltage (Vdss)
IRF1404ZSTRR Applications
There are a lot of Infineon Technologies
IRF1404ZSTRR applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 4340pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF1404ZSTRR Features
a 40V drain to source voltage (Vdss)
IRF1404ZSTRR Applications
There are a lot of Infineon Technologies
IRF1404ZSTRR applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRF1404ZSTRR More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75A I(D) 40V 0.0037ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET
MOSFET, 40V, 190A, 3.7 mOhm, 100 nC Qg, D2-Pak
Compliant Surface Mount Contains Lead 110 ns 3.7 mΩ TO-263-3 75 A 4.34 nF
75A I(D) 40V 0.0037ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET
MOSFET, 40V, 190A, 3.7 mOhm, 100 nC Qg, D2-Pak
Compliant Surface Mount Contains Lead 110 ns 3.7 mΩ TO-263-3 75 A 4.34 nF
The three parts on the right have similar specifications to IRF1404ZSTRR.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageView Compare
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IRF1404ZSTRRSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®2011Obsolete1 (Unlimited)MOSFET (Metal Oxide)220W TcN-Channel3.7m Ω @ 75A, 10V4V @ 250μA4340pF @ 25V180A Tc150nC @ 10V40V10V±20VNon-RoHS Compliant-------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)200W TcN-Channel5.3m Ω @ 101A, 10V4V @ 250μA5480pF @ 25V131A Tc260nC @ 10V55V10V±20VNon-RoHS CompliantYESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING75A0.0053Ohm680A55V590 mJ-
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)MOSFET (Metal Oxide)200W TcN-Channel12mOhm @ 50A, 10V4V @ 250μA3210pF @ 25V84A Tc130nC @ 10V60V10V±20VNon-RoHS Compliant------------------------D2PAK
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 160W TcN-Channel36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V100V10V±20VNon-RoHS CompliantYESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING42A0.036Ohm140A100V420 mJ-
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