Infineon Technologies IRF1404ZPBF

Name: IRF1404ZPBF
Brand: Infineon Technologies
SKU: 2479965-IRF1404ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1404ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479965-IRF1404ZPBF

Description:: MOSFET N-CH 40V 75A TO-220AB

ECAD Model:

Datasheet:: IRF1404ZPBF

Specifications

Infineon Technologies IRF1404ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404ZPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2003
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.7Ohm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
40V
Technology
MOSFET (Metal Oxide)
Current Rating
75A
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
220W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.7m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4340pF @ 25V
Current - Continuous Drain (Id) @ 25°C
180A Tc
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V
Rise Time
110ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
58 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
190A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
750A
Dual Supply Voltage
40V
Avalanche Energy Rating (Eas)
480 mJ
Recovery Time
42 ns
Nominal Vgs
4 V
Height
8.77mm
Length
10.54mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF1404ZPBF Description
The exceptionally low onresistance per silicon area of this HEXFET? Power MOSFET is made possible by the use of cutting-edge manufacturing processes. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.

IRF1404ZPBF Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free

IRF1404ZPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRF1404ZPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.7Milliohms;ID 190A;TO-220AB;PD 220W;-55de
Single N-Channel 40 V 3.7 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 40V 190A 3-Pin(3 Tab) TO-220AB - Rail/Tube
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull
N CH MOSFET, 40V, 190A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:220W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:190A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:3.7ohm; Package / Case:TO-220AB; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulse Current Idm:750A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRF1404ZPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Termination

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Surface Mount

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
IRF1404ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2003

e3

Active

1 (Unlimited)

3

EAR99

3.7Ohm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

40V

MOSFET (Metal Oxide)

75A

1

200W Tc

Single

ENHANCEMENT MODE

220W

DRAIN

18 ns

N-Channel

SWITCHING

3.7m Ω @ 75A, 10V

4V @ 250μA

4340pF @ 25V

180A Tc

150nC @ 10V

110ns

10V

±20V

58 ns

36 ns

190A

4V

TO-220AB

20V

40V

750A

40V

480 mJ

42 ns

4 V

8.77mm

10.54mm

4.69mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1324SPBF

Infineon Technologies

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

HEXFET®

2008

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

1

300W Tc

-

-

300W

-

17 ns

N-Channel

-

1.65mOhm @ 195A, 10V

4V @ 250μA

7590pF @ 24V

195A Tc

240nC @ 10V

190ns

10V

±20V

120 ns

83 ns

340A

4V

-

20V

24V

-

24V

-

-

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

RoHS Compliant

-

D2PAK

SMD/SMT

175°C

-55°C

24V

7.59nF

1.65mOhm

1.65 mΩ

-

-

-

-

-

-

-

-

-

-

-

IRF1404ZPBF vs IRF1324SPBF
IRF1104STRL

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

2.4W Ta 170W Tc

-

-

-

-

-

N-Channel

-

9mOhm @ 60A, 10V

4V @ 250μA

2900pF @ 25V

100A Tc

93nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

D2PAK

-

-

-

40V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF1404ZPBF vs IRF1104STRL
IRF1310NSTRR

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

1

3.8W Ta 160W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

140A

-

420 mJ

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

100V

-

-

-

YES

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

42A

0.036Ohm

100V

IRF1404ZPBF vs IRF1310NSTRR

Certification

Related parts for IRF1404ZPBF

IRF1324STRLPBF

Infineon Technologies

MOSFET N-CH 24V 195A D2PAK
IRF1324SPBF

Infineon Technologies

MOSFET N-CH 24V 195A D2-PAK
IRF1405ZSPBF

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK
IRF1310NSTRRPBF

Infineon Technologies

MOSFET N-CH 100V 42A D2PAK
IRF1104STRL

Infineon Technologies

MOSFET N-CH 40V 100A D2PAK
IRF1405STRR

Infineon Technologies

MOSFET N-CH 55V 131A D2PAK
IRF1010ESTRR

Infineon Technologies

MOSFET N-CH 60V 84A D2PAK
IRF1310NSTRR

Infineon Technologies

MOSFET N-CH 100V 42A D2PAK
IRF1010NSTRR

Infineon Technologies

MOSFET N-CH 55V 85A D2PAK
IRF1405SPBF

Infineon Technologies

MOSFET N-CH 55V 131A D2PAK

Popular Search Part Number Related Keywords Search Tags

IRF1404ZPBF Price
IRF1404ZPBF Picture
IRF1404ZPBF Buy
IRF1404ZPBF Distributor
IRF1404ZPBF Image
IRF1404ZPBF Inquiry
IRF1404ZPBF Manufacturer
IRF1404ZPBF Part
IRF1404ZPBF Description
IRF1404ZPBF Technical Data
IRF1404ZPBF Stock
IRF1404ZPBF Wholesales
IRF1404ZPBF PDF
IRF1404ZPBF Inventory
IRF1404ZPBF Supplier
IRF1404ZPBF Datasheet
IRF1404ZPBF Rfq
IRF1404ZPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 190A 3-Pin(3 Tab) TO-220A	985	1 $1.389 10 $1.2114 100 $1.0051 500 $0.9143 1000 $0.7725 2000 $0.7221 5000 $0.65 10000 $0.585
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	MOSFET N-CH 40V 180A TO-220AB RoHS: Compliant	3386	1 $1.92 10 $1.733 100 $1.3922 500 $1.08282 1000 $0.89719
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 190A 3-Pin(3 Tab) TO-220A	39664	16 $0.7772 100 $0.7521 250 $0.7286 500 $0.7065 1000 $0.6857 2500 $0.6661 5000 $0.6476 10000 $0.6301 25000 $0.6136
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 190A 3-Pin(3 Tab) TO-220A	985	11 $1.381
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 190A 3-Pin(3 Tab) TO-220A	100	10 $1.428 50 $1.1067 100 $1.0634
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 190A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	1000 $0.6479 2000 $0.6249 4000 $0.6019 6000 $0.5819 10000 $0.5709
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	N CHANNEL MOSFET, 40V, 190A, TO-220AB, Transistor	512	1 $1.83 10 $1.57 100 $1.28 500 $1.15 1000 $0.968 2500 $0.911 5000 $0.883
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 2.7 Mil RoHS: Compliant	0	2 $3.23
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	Power Field-Effect Transistor, 75A I(D), 40V, 0.00 RoHS: Compliant	88	1 $0.91 25 $0.84 100 $0.81 500 $0.78 1000 $0.74
IRF1404ZPBF DISTI #IRF1404ZPBF	International Rectifier	Power Field-Effect Transistor, 75A I(D), 40V, 0.00 RoHS: Compliant	30542	1 $0.91 25 $0.84 100 $0.81 500 $0.78 1000 $0.74
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg RoHS: Compliant	6959	1 $1.77 10 $1.5 100 $1.2 500 $1.06 1000 $0.87 2000 $0.811
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	MOSFET N-CHANNEL 40V 190A HEXFET TO220AB, PK	170	2 $1.99 10 $1.125 20 $1.095 40 $1.055 100 $0.9
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	MOSFET N-CHANNEL 40V 190A HEXFET TO220AB, TU	1004	10 $1.125 20 $1.095 40 $1.055 100 $0.9
IRF1404ZPBF DISTI #IRF1404ZPBF	International Rectifier		1968
IRF1404ZPBF DISTI #IRF1404ZPBF	International Rectifier	75A, 40V, 0.0037OHM, N-CHANNEL, SI, POWER, MOSFET,	277	1 $1.56 73 $0.78 193 $0.702
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 40V, 190A, 220	298	1 $1.31 3 $1.17 10 $0.98 100 $0.85
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	N-Ch 40V 120A 200W 0,0037R TO220AB RoHS: Compliant	210	10 $1.08 50 $0.809 200 $0.719 500 $0.692
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	MOSFET, N, 40V, 190A, TO-220 RoHS: Compliant	1243	5 $1.12 25 $1.08 100 $0.918 250 $0.868 500 $0.818
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	MOSFET, N, 40V, 190A, TO-220 RoHS: Compliant	1238	1 $2.81 10 $2.38 100 $1.91 500 $1.68 1000 $1.38 2000 $1.29 5000 $1.24 10000 $1.2
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 190A 3-Pin(3 Tab) TO-220A RoHS: Compliant	1000	5 $1.1 25 $0.952 100 $0.747 500 $0.686 1000 $0.628
IRF1404ZPBF DISTI #IRF1404ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 190A 3-Pin(3 Tab) TO-220A RoHS: Compliant	100	1 $2.21 10 $1.14 50 $0.884 100 $0.834

IRF1404~~(21)~~
IRF140~~(62)~~
IRF14~~(62)~~
IRF1~~(69)~~
IRF~~(69)~~

Infineon Technologies IRF1404ZPBF

Quick Request Quote

TPS92662AQPHPRQ1 Alternatives, Characteristics, Functions and Other Details

BCM89811B1AWMLG Manufacturer, Characteristics, Specifications and Purchase Guide

NCP1377BDR2G Symbol, Operating Principle, Technical Parameters and More

ADS1248IPWR Specifications, Characteristics, Applications and Market Trends