Infineon Technologies IRF1404STRR
- Part Number:
- IRF1404STRR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492561-IRF1404STRR
- Description:
- MOSFET N-CH 40V 162A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF1404STRR
Infineon Technologies IRF1404STRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404STRR.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2001
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMATTE TIN OVER NICKEL
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 200W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4m Ω @ 95A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C162A Tc
- Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.004Ohm
- Pulsed Drain Current-Max (IDM)650A
- DS Breakdown Voltage-Min40V
- Avalanche Energy Rating (Eas)519 mJ
- RoHS StatusNon-RoHS Compliant
IRF1404STRR Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 519 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7360pF @ 25V.75A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 650A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF1404STRR Features
the avalanche energy rating (Eas) is 519 mJ
based on its rated peak drain current 650A.
a 40V drain to source voltage (Vdss)
IRF1404STRR Applications
There are a lot of Infineon Technologies
IRF1404STRR applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 519 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 7360pF @ 25V.75A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 650A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 40V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF1404STRR Features
the avalanche energy rating (Eas) is 519 mJ
based on its rated peak drain current 650A.
a 40V drain to source voltage (Vdss)
IRF1404STRR Applications
There are a lot of Infineon Technologies
IRF1404STRR applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF1404STRR More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET N-CH 40V 162A D2PAK
MOSFET N-CH 40V 162A D2PAK
The three parts on the right have similar specifications to IRF1404STRR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageView Compare
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IRF1404STRRSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2001e3Obsolete1 (Unlimited)2EAR99MATTE TIN OVER NICKELAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 200W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4m Ω @ 95A, 10V4V @ 250μA7360pF @ 25V162A Tc200nC @ 10V40V10V±20V75A0.004Ohm650A40V519 mJNon-RoHS Compliant-- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®1998-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--------2.4W Ta 170W Tc--N-Channel-9mOhm @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V40V10V±20V-----Non-RoHS CompliantD2PAK
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2004e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE200W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING5.3m Ω @ 101A, 10V4V @ 250μA5480pF @ 25V131A Tc260nC @ 10V55V10V±20V75A0.0053Ohm680A55V590 mJNon-RoHS Compliant-
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2002e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V55V10V±20V75A0.011Ohm290A55V250 mJNon-RoHS Compliant-
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