Infineon Technologies IRF1404PBF

Name: IRF1404PBF
Brand: Infineon Technologies
SKU: 2479375-IRF1404PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1404PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479375-IRF1404PBF

Description:: MOSFET N-CH 40V 202A TO-220AB

ECAD Model:

Datasheet:: IRF1404PBF

Specifications

Infineon Technologies IRF1404PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404PBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2003
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
4mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
40V
Technology
MOSFET (Metal Oxide)
Current Rating
162A
Lead Pitch
2.54mm
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
333W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
333W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 121A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5669pF @ 25V
Current - Continuous Drain (Id) @ 25°C
202A Tc
Gate Charge (Qg) (Max) @ Vgs
196nC @ 10V
Rise Time
190ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
33 ns
Turn-Off Delay Time
46 ns
Continuous Drain Current (ID)
202A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
75A
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
808A
Dual Supply Voltage
40V
Avalanche Energy Rating (Eas)
620 mJ
Recovery Time
117 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
19.8mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF1404PBF Features

Fast Switching
Fully Avalanche Rated
Lead-Free
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature

International Rectifier's seventh generation HEXFET power MOSFET IRF1404PBF uses advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. TO-220 packages are generally suitable for all commercial and industrial applications with a power consumption of about 50 watts. TO-220 is widely accepted throughout the industry because of its low thermal resistance and low packaging cost.

device

IRF1404PBF applications

Commercial applications
industrial applications
switching speed and rugged applications

IRF1404PBF More Descriptions

Single N-Channel 40 V 0.004 Ohm 196 nC HEXFET® Power Mosfet - TO-220-3
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 333 W
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 40V, 162A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:202A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:4mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:650A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Product Comparison

The three parts on the right have similar specifications to IRF1404PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

JESD-609 Code

Terminal Finish

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

View Compare
IRF1404PBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2003

Active

1 (Unlimited)

3

Through Hole

EAR99

4mOhm

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

40V

MOSFET (Metal Oxide)

162A

2.54mm

1

1

333W Tc

Single

ENHANCEMENT MODE

333W

DRAIN

17 ns

N-Channel

SWITCHING

4m Ω @ 121A, 10V

4V @ 250μA

5669pF @ 25V

202A Tc

196nC @ 10V

190ns

10V

±20V

33 ns

46 ns

202A

4V

TO-220AB

20V

75A

40V

808A

40V

620 mJ

117 ns

175°C

4 V

19.8mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1324SPBF

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

HEXFET®

2008

Obsolete

1 (Unlimited)

-

SMD/SMT

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

1

-

300W Tc

-

-

300W

-

17 ns

N-Channel

-

1.65mOhm @ 195A, 10V

4V @ 250μA

7590pF @ 24V

195A Tc

240nC @ 10V

190ns

10V

±20V

120 ns

83 ns

340A

4V

-

20V

-

24V

-

24V

-

-

-

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

RoHS Compliant

-

D2PAK

175°C

-55°C

24V

7.59nF

1.65mOhm

1.65 mΩ

-

-

-

-

-

-

IRF1404PBF vs IRF1324SPBF
IRF1405ZSPBF

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2003

Discontinued

1 (Unlimited)

2

-

EAR99

4.9MOhm

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

1

-

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

18 ns

N-Channel

SWITCHING

4.9m Ω @ 75A, 10V

4V @ 250μA

4780pF @ 25V

75A Tc

180nC @ 10V

110ns

10V

±20V

82 ns

48 ns

75A

4V

-

20V

-

55V

600A

-

420 mJ

-

-

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G2

IRF1404PBF vs IRF1405ZSPBF
IRF1104STRL

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

2.4W Ta 170W Tc

-

-

-

-

-

N-Channel

-

9mOhm @ 60A, 10V

4V @ 250μA

2900pF @ 25V

100A Tc

93nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

D2PAK

-

-

40V

-

-

-

-

-

-

-

-

-

IRF1404PBF vs IRF1104STRL