Infineon Technologies IRF1404LPBF
- Part Number:
- IRF1404LPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2848880-IRF1404LPBF
- Description:
- MOSFET N-CH 40V 162A TO-262
- Datasheet:
- IRF1404LPBF
Infineon Technologies IRF1404LPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404LPBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance4mOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC40V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Current Rating162A
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max3.8W Ta 200W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation200W
- Case ConnectionDRAIN
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4m Ω @ 95A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C162A Tc
- Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
- Rise Time140ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)26 ns
- Turn-Off Delay Time72 ns
- Continuous Drain Current (ID)162A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)75A
- Drain to Source Breakdown Voltage40V
- Pulsed Drain Current-Max (IDM)650A
- Nominal Vgs4 V
- Height9.652mm
- Length10.668mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF1404LPBF Overview
The maximum input capacitance of this device is 7360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 162A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.As shown in the table below, the drain current of this device is 75A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 72 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 650A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRF1404LPBF Features
a continuous drain current (ID) of 162A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 650A.
a threshold voltage of 4V
IRF1404LPBF Applications
There are a lot of Infineon Technologies
IRF1404LPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 7360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 162A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.As shown in the table below, the drain current of this device is 75A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 72 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 650A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRF1404LPBF Features
a continuous drain current (ID) of 162A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 650A.
a threshold voltage of 4V
IRF1404LPBF Applications
There are a lot of Infineon Technologies
IRF1404LPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF1404LPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;TO-262;PD 200W;VGS /-20V
Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 40V, 162A, TO-262; Tra; N CHANNEL MOSFET, 40V, 162A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 40V, 162A, TO-262; Tra; N CHANNEL MOSFET, 40V, 162A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
The three parts on the right have similar specifications to IRF1404LPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeMax Operating TemperatureMin Operating TemperatureTerminal FormJESD-30 CodeAvalanche Energy Rating (Eas)Supplier Device PackageDrain to Source Voltage (Vdss)Surface MountTerminal PositionQualification StatusConfigurationDrain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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IRF1404LPBF12 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~175°C TJTubeHEXFET®2004e3Active1 (Unlimited)3EAR994mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose Power40VMOSFET (Metal Oxide)260162A30113.8W Ta 200W TcSingleENHANCEMENT MODE200WDRAIN17 nsN-ChannelSWITCHING4m Ω @ 95A, 10V4V @ 250μA7360pF @ 25V162A Tc200nC @ 10V140ns10V±20V26 ns72 ns162A4V20V75A40V650A4 V9.652mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free--------------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--Tape & Reel (TR)HEXFET®2004e3Discontinued1 (Unlimited)2EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power-MOSFET (Metal Oxide)260-301-3.8W Ta 160W TcSingleENHANCEMENT MODE3.8WDRAIN11 nsN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V56ns10V±20V40 ns45 ns42A-20V-100V--4.826mm10.668mm9.65mm-NoROHS3 Compliant-175°C-55°CGULL WINGR-PSSO-G2420 mJ--------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2002-Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)-----200W Tc-----N-Channel-12mOhm @ 50A, 10V4V @ 250μA3210pF @ 25V84A Tc130nC @ 10V-10V±20V--------------Non-RoHS Compliant------D2PAK60V------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2002e3Obsolete1 (Unlimited)2EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose Power-MOSFET (Metal Oxide)260-301-180W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V-10V±20V-----75A-290A------Non-RoHS Compliant---GULL WINGR-PSSO-G2250 mJ-55VYESSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE0.011Ohm55V
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