IRF1404LPBF

Infineon Technologies IRF1404LPBF

Part Number:
IRF1404LPBF
Manufacturer:
Infineon Technologies
Ventron No:
2848880-IRF1404LPBF
Description:
MOSFET N-CH 40V 162A TO-262
ECAD Model:
Datasheet:
IRF1404LPBF

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Specifications
Infineon Technologies IRF1404LPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1404LPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    4mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    40V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    162A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.8W Ta 200W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    200W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4m Ω @ 95A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7360pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    162A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    200nC @ 10V
  • Rise Time
    140ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    26 ns
  • Turn-Off Delay Time
    72 ns
  • Continuous Drain Current (ID)
    162A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    75A
  • Drain to Source Breakdown Voltage
    40V
  • Pulsed Drain Current-Max (IDM)
    650A
  • Nominal Vgs
    4 V
  • Height
    9.652mm
  • Length
    10.668mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF1404LPBF Overview
The maximum input capacitance of this device is 7360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 162A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.As shown in the table below, the drain current of this device is 75A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 72 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 650A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRF1404LPBF Features
a continuous drain current (ID) of 162A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 650A.
a threshold voltage of 4V


IRF1404LPBF Applications
There are a lot of Infineon Technologies
IRF1404LPBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF1404LPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;TO-262;PD 200W;VGS /-20V
Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 40V, 162A, TO-262; Tra; N CHANNEL MOSFET, 40V, 162A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
Product Comparison
The three parts on the right have similar specifications to IRF1404LPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Operating Temperature
    Min Operating Temperature
    Terminal Form
    JESD-30 Code
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Surface Mount
    Terminal Position
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRF1404LPBF
    IRF1404LPBF
    12 Weeks
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    4mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    40V
    MOSFET (Metal Oxide)
    260
    162A
    30
    1
    1
    3.8W Ta 200W Tc
    Single
    ENHANCEMENT MODE
    200W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    4m Ω @ 95A, 10V
    4V @ 250μA
    7360pF @ 25V
    162A Tc
    200nC @ 10V
    140ns
    10V
    ±20V
    26 ns
    72 ns
    162A
    4V
    20V
    75A
    40V
    650A
    4 V
    9.652mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1310NSTRRPBF
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    260
    -
    30
    1
    -
    3.8W Ta 160W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    56ns
    10V
    ±20V
    40 ns
    45 ns
    42A
    -
    20V
    -
    100V
    -
    -
    4.826mm
    10.668mm
    9.65mm
    -
    No
    ROHS3 Compliant
    -
    175°C
    -55°C
    GULL WING
    R-PSSO-G2
    420 mJ
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1010ESTRR
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    200W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    12mOhm @ 50A, 10V
    4V @ 250μA
    3210pF @ 25V
    84A Tc
    130nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    D2PAK
    60V
    -
    -
    -
    -
    -
    -
  • IRF1010NSTRR
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    260
    -
    30
    1
    -
    180W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    11m Ω @ 43A, 10V
    4V @ 250μA
    3210pF @ 25V
    85A Tc
    120nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    75A
    -
    290A
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    GULL WING
    R-PSSO-G2
    250 mJ
    -
    55V
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    0.011Ohm
    55V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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