Infineon Technologies IRF1324LPBF

Name: IRF1324LPBF
Brand: Infineon Technologies
SKU: 2493662-IRF1324LPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1324LPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2493662-IRF1324LPBF

Description:: MOSFET N-CH 24V 195A TO262

ECAD Model:

Datasheet:: IRF1324(L,S)PBF

Specifications

Infineon Technologies IRF1324LPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1324LPBF.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins
3
Supplier Device Package
TO-262
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2009
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
300W Tc
Power Dissipation
300W
Turn On Delay Time
17 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.65mOhm @ 195A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7590pF @ 24V
Current - Continuous Drain (Id) @ 25°C
195A Tc
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V
Rise Time
190ns
Drain to Source Voltage (Vdss)
24V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
120 ns
Turn-Off Delay Time
83 ns
Continuous Drain Current (ID)
340A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
24V
Input Capacitance
7.59nF
Drain to Source Resistance
1.65mOhm
Rds On Max
1.65 mΩ
Nominal Vgs
4 V
Height
9.65mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

IRF1324LPBF Overview
A device's maximal input capacitance is 7590pF @ 24V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 340A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 24V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 83 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.65mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 24V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF1324LPBF Features
a continuous drain current (ID) of 340A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 83 ns
single MOSFETs transistor is 1.65mOhm
a 24V drain to source voltage (Vdss)

IRF1324LPBF Applications
There are a lot of Infineon Technologies
IRF1324LPBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRF1324LPBF More Descriptions

24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package
Trans MOSFET N-CH 24V 340A 3-Pin (3 Tab) TO-262
MOSFET, 24V, 340A, 1.65 MOHM, 160 NC QG, TO-262
N CHANNEL MOSFET, 24V, 340A, TO-262
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:340A; Drain Source Voltage, Vds:24V; On Resistance, Rds(on):1.3mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:300W ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRF1324LPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRF1324LPBF

Infineon Technologies

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

TO-262

-55°C~175°C TJ

Tube

HEXFET®

2009

Obsolete

1 (Unlimited)

175°C

-55°C

MOSFET (Metal Oxide)

300W Tc

300W

17 ns

N-Channel

1.65mOhm @ 195A, 10V

4V @ 250μA

7590pF @ 24V

195A Tc

240nC @ 10V

190ns

24V

10V

±20V

120 ns

83 ns

340A

20V

24V

7.59nF

1.65mOhm

1.65 mΩ

4 V

9.65mm

10.668mm

4.826mm

No SVHC

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1010ESTRR

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

D2PAK

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

200W Tc

-

-

N-Channel

12mOhm @ 50A, 10V

4V @ 250μA

3210pF @ 25V

84A Tc

130nC @ 10V

-

60V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF1324LPBF vs IRF1010ESTRR
IRF1310NSTRR

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

3.8W Ta 160W Tc

-

-

N-Channel

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

-

100V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

YES

SILICON

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

42A

0.036Ohm

140A

100V

420 mJ

IRF1324LPBF vs IRF1310NSTRR
IRF1405SPBF

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

D2PAK

-55°C~175°C TJ

Tube

HEXFET®

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

200W Tc

-

-

N-Channel

5.3mOhm @ 101A, 10V

4V @ 250μA

5.48pF @ 25V

131A Tc

260nC @ 10V

-

55V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF1324LPBF vs IRF1405SPBF