Infineon Technologies IRF1310NPBF
- Part Number:
- IRF1310NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484989-IRF1310NPBF
- Description:
- MOSFET N-CH 100V 42A TO-220AB
- Datasheet:
- IRF1310NPBF
Infineon Technologies IRF1310NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1310NPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1998
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating42A
- Lead Pitch2.54mm
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max160W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation160W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs36m Ω @ 22A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C42A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time56ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)40 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)42A
- Threshold Voltage2V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Avalanche Energy Rating (Eas)420 mJ
- Recovery Time270 ns
- Max Junction Temperature (Tj)175°C
- Nominal Vgs4 V
- Height19.8mm
- Length10.5156mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRF1310NPBF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 420 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1900pF @ 25V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF1310NPBF Features
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
a threshold voltage of 2V
IRF1310NPBF Applications
There are a lot of Infineon Technologies
IRF1310NPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 420 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1900pF @ 25V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF1310NPBF Features
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 45 ns
a threshold voltage of 2V
IRF1310NPBF Applications
There are a lot of Infineon Technologies
IRF1310NPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF1310NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS /-20V
Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 100V 42A 36mΩ 150°C TO-220 IRF1310NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 100V 42A 36mΩ 150°C TO-220 IRF1310NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 42A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF1310NPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingLead PitchNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Recovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxJESD-609 CodeResistanceTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodePulsed Drain Current-Max (IDM)View Compare
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IRF1310NPBF12 WeeksTinThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®1998Active1 (Unlimited)3EAR99AVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power100VMOSFET (Metal Oxide)42A2.54mm11160W TcSingleENHANCEMENT MODE160WDRAIN11 nsN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V56ns10V±20V40 ns45 ns42A2VTO-220AB20V100V100V420 mJ270 ns175°C4 V19.8mm10.5156mm4.69mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free-----------------
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTubeHEXFET®2008Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--1-300W Tc--300W-17 nsN-Channel-1.65mOhm @ 195A, 10V4V @ 250μA7590pF @ 24V195A Tc240nC @ 10V190ns10V±20V120 ns83 ns340A4V-20V24V24V---4 V4.826mm10.668mm9.65mmNo SVHCNoRoHS Compliant-D2PAKSMD/SMT175°C-55°C24V7.59nF1.65mOhm1.65 mΩ--------
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTubeHEXFET®2003Discontinued1 (Unlimited)2EAR99AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEFET General Purpose Power-MOSFET (Metal Oxide)--1-230W TcSingleENHANCEMENT MODE230WDRAIN18 nsN-ChannelSWITCHING4.9m Ω @ 75A, 10V4V @ 250μA4780pF @ 25V75A Tc180nC @ 10V110ns10V±20V82 ns48 ns75A4V-20V55V-420 mJ--4 V4.826mm10.668mm9.65mmNo SVHCNoROHS3 CompliantLead Free--------e34.9MOhmMatte Tin (Sn) - with Nickel (Ni) barrierGULL WING26030R-PSSO-G2600A
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---Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----2.4W Ta 170W Tc-----N-Channel-9mOhm @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V-10V±20V-----------------Non-RoHS Compliant-D2PAK---40V-----------
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