Infineon Technologies IRF1104L
- Part Number:
- IRF1104L
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071654-IRF1104L
- Description:
- MOSFET N-CH 40V 100A TO-262
- Datasheet:
- IRF1104L
Infineon Technologies IRF1104L technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1104L.
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1998
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)225
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.4W Ta 170W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)100A
- Drain-source On Resistance-Max0.009Ohm
- Pulsed Drain Current-Max (IDM)400A
- DS Breakdown Voltage-Min40V
- Avalanche Energy Rating (Eas)350 mJ
- RoHS StatusNon-RoHS Compliant
IRF1104L Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 100A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF1104L Features
the avalanche energy rating (Eas) is 350 mJ
based on its rated peak drain current 400A.
a 40V drain to source voltage (Vdss)
IRF1104L Applications
There are a lot of Infineon Technologies
IRF1104L applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2900pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 100A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF1104L Features
the avalanche energy rating (Eas) is 350 mJ
based on its rated peak drain current 400A.
a 40V drain to source voltage (Vdss)
IRF1104L Applications
There are a lot of Infineon Technologies
IRF1104L applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The three parts on the right have similar specifications to IRF1104L.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageSubcategoryTerminal FormView Compare
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IRF1104LThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AANOSILICON-55°C~175°C TJTubeHEXFET®1998e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE8541.29.00.95MOSFET (Metal Oxide)SINGLE22530R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE2.4W Ta 170W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING9m Ω @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V40V10V±20V100A0.009Ohm400A40V350 mJNon-RoHS Compliant----
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2002-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-------200W Tc--N-Channel-12mOhm @ 50A, 10V4V @ 250μA3210pF @ 25V84A Tc130nC @ 10V60V10V±20V-----Non-RoHS CompliantD2PAK--
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY-MOSFET (Metal Oxide)SINGLE26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.8W Ta 160W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V100V10V±20V42A0.036Ohm140A100V420 mJNon-RoHS Compliant-FET General Purpose PowerGULL WING
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-------200W Tc--N-Channel-5.3mOhm @ 101A, 10V4V @ 250μA5.48pF @ 25V131A Tc260nC @ 10V55V10V±20V-----ROHS3 CompliantD2PAK--
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