Infineon Technologies IRF1018ESLPBF
- Part Number:
- IRF1018ESLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071751-IRF1018ESLPBF
- Description:
- MOSFET N-CH 60V 79A TO-262
- Datasheet:
- IRF1018ESLPBF
Infineon Technologies IRF1018ESLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1018ESLPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max110W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation110W
- Case ConnectionDRAIN
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.4m Ω @ 47A, 10V
- Vgs(th) (Max) @ Id4V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2290pF @ 50V
- Current - Continuous Drain (Id) @ 25°C79A Tc
- Gate Charge (Qg) (Max) @ Vgs69nC @ 10V
- Rise Time35ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)46 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)79A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0084Ohm
- Drain to Source Breakdown Voltage60V
- Avalanche Energy Rating (Eas)88 mJ
- Recovery Time39 ns
- Height9.65mm
- Length10.668mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRF1018ESLPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 88 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2290pF @ 50V.This device has a continuous drain current (ID) of [79A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).
IRF1018ESLPBF Features
the avalanche energy rating (Eas) is 88 mJ
a continuous drain current (ID) of 79A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
a threshold voltage of 4V
IRF1018ESLPBF Applications
There are a lot of Infineon Technologies
IRF1018ESLPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 88 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2290pF @ 50V.This device has a continuous drain current (ID) of [79A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).
IRF1018ESLPBF Features
the avalanche energy rating (Eas) is 88 mJ
a continuous drain current (ID) of 79A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
a threshold voltage of 4V
IRF1018ESLPBF Applications
There are a lot of Infineon Technologies
IRF1018ESLPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF1018ESLPBF More Descriptions
Trans MOSFET N-CH 60V 79A 3-Pin(3 Tab) TO-262 Tube / MOSFET N-CH 60V 79A TO-262
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHSInfineon SCT
MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-262; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHSInfineon SCT
MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-262; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF1018ESLPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Recovery TimeHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusMax Operating TemperatureMin Operating TemperatureAdditional FeatureTerminal FormJESD-30 CodeElement ConfigurationSurface MountQualification StatusDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinView Compare
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IRF1018ESLPBFThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~175°C TJTubeHEXFET®2004e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)SINGLE260401SINGLE WITH BUILT-IN DIODE110W TcENHANCEMENT MODE110WDRAIN13 nsN-ChannelSWITCHING8.4m Ω @ 47A, 10V4V @ 100μA2290pF @ 50V79A Tc69nC @ 10V35ns10V±20V46 ns55 ns79A4V20V0.0084Ohm60V88 mJ39 ns9.65mm10.668mm4.826mmNo SVHCNoRoHS Compliant-------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--Tape & Reel (TR)HEXFET®2004e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)-260301-3.8W Ta 160W TcENHANCEMENT MODE3.8WDRAIN11 nsN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V56ns10V±20V40 ns45 ns42A-20V-100V420 mJ-4.826mm10.668mm9.65mm-NoROHS3 Compliant175°C-55°CAVALANCHE RATED, HIGH RELIABILITYGULL WINGR-PSSO-G2Single------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)SINGLE260301SINGLE WITH BUILT-IN DIODE3.8W Ta 160W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-10V±20V-----0.036Ohm-420 mJ------Non-RoHS Compliant--AVALANCHE RATED, HIGH RELIABILITYGULL WINGR-PSSO-G2-YESNot Qualified100V42A140A100V
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2002e3Obsolete1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)SINGLE260301SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V-10V±20V-----0.011Ohm-250 mJ------Non-RoHS Compliant--AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEGULL WINGR-PSSO-G2-YESNot Qualified55V75A290A55V
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