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IRF1010ZSPBF

Infineon Technologies IRF1010ZSPBF

Part Number:
IRF1010ZSPBF
Manufacturer:
Infineon Technologies
Ventron No:
2492676-IRF1010ZSPBF
Description:
MOSFET N-CH 55V 75A D2PAK
ECAD Model:
Datasheet:
IRF1010ZSPBF

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Specifications
Infineon Technologies IRF1010ZSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010ZSPBF.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Supplier Device Package
    D2PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    140W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    7.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2.84pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    75A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    95nC @ 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
IRF1010ZSPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.84pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF1010ZSPBF Features
a 55V drain to source voltage (Vdss)


IRF1010ZSPBF Applications
There are a lot of Rochester Electronics, LLC
IRF1010ZSPBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF1010ZSPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 75A;D2Pak;PD 140W;VGS /-20
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
IRF1010ZSPBF,MOSFET, 55V, 94A, 7.5 MOHM, 63 NC QG, D2-PAKN CHANNEL MOSFET, 55V, 75A, D2-PAK; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:7.5mohm; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:360A; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to IRF1010ZSPBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Surface Mount
    Transistor Element Material
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRF1010ZSPBF
    IRF1010ZSPBF
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    D2PAK
    -55°C~175°C TJ
    Tube
    HEXFET®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    140W Tc
    N-Channel
    7.5mOhm @ 75A, 10V
    4V @ 250μA
    2.84pF @ 25V
    75A Tc
    95nC @ 10V
    55V
    10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1405STRR
    IRF1405STRR
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    200W Tc
    N-Channel
    5.3m Ω @ 101A, 10V
    4V @ 250μA
    5480pF @ 25V
    131A Tc
    260nC @ 10V
    55V
    10V
    ±20V
    Non-RoHS Compliant
    YES
    SILICON
    2004
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    75A
    0.0053Ohm
    680A
    55V
    590 mJ
    IRF1010ZSPBF vs IRF1405STRR
  • IRF1010ESTRR
    IRF1010ESTRR
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    200W Tc
    N-Channel
    12mOhm @ 50A, 10V
    4V @ 250μA
    3210pF @ 25V
    84A Tc
    130nC @ 10V
    60V
    10V
    ±20V
    Non-RoHS Compliant
    -
    -
    2002
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF1010ZSPBF vs IRF1010ESTRR
  • IRF1010NSTRR
    IRF1010NSTRR
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    180W Tc
    N-Channel
    11m Ω @ 43A, 10V
    4V @ 250μA
    3210pF @ 25V
    85A Tc
    120nC @ 10V
    55V
    10V
    ±20V
    Non-RoHS Compliant
    YES
    SILICON
    2002
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    75A
    0.011Ohm
    290A
    55V
    250 mJ
    IRF1010ZSPBF vs IRF1010NSTRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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