Infineon Technologies IRF1010Z
- Part Number:
- IRF1010Z
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492668-IRF1010Z
- Description:
- MOSFET N-CH 55V 75A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRF1010Z
Infineon Technologies IRF1010Z technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010Z.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2003
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max140W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2840pF @ 25V
- Current - Continuous Drain (Id) @ 25°C75A Tc
- Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.0075Ohm
- Pulsed Drain Current-Max (IDM)360A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)130 mJ
- RoHS StatusNon-RoHS Compliant
IRF1010Z Description
IRF1010Z is a kind of HEXFET? power MOSFET that is designed based on advanced processing technology for the purpose of making extremely low on-resistance per silicon area possible. Moreover, Power MOSFET IRF1010Z is capable of providing a fast switching speed, improved repetitive avalanche rating, and a 175??C junction operating temperature. All of these make the device more efficient and reliable for use in a wide range of applications.
IRF1010Z Features
Ultra-low on-resistance
Advanced processing techniques
Fast switching speed
Ruggedized device design
Available in the D2Pak package
IRF1010Z Applications
Synchronous rectification
Uninterruptible power supply
High-speed switching
IRF1010Z is a kind of HEXFET? power MOSFET that is designed based on advanced processing technology for the purpose of making extremely low on-resistance per silicon area possible. Moreover, Power MOSFET IRF1010Z is capable of providing a fast switching speed, improved repetitive avalanche rating, and a 175??C junction operating temperature. All of these make the device more efficient and reliable for use in a wide range of applications.
IRF1010Z Features
Ultra-low on-resistance
Advanced processing techniques
Fast switching speed
Ruggedized device design
Available in the D2Pak package
IRF1010Z Applications
Synchronous rectification
Uninterruptible power supply
High-speed switching
The three parts on the right have similar specifications to IRF1010Z.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusSupplier Device PackageJESD-609 CodeECCN CodeTerminal FinishSubcategoryTerminal FormQualification StatusView Compare
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IRF1010ZThrough HoleTO-220-3NOSILICON-55°C~175°C TJTubeHEXFET®2003Obsolete1 (Unlimited)3AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEMOSFET (Metal Oxide)SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODE140W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING7.5m Ω @ 75A, 10V4V @ 250μA2840pF @ 25V75A Tc95nC @ 10V55V10V±20VTO-220AB75A0.0075Ohm360A55V130 mJNon-RoHS Compliant-------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)--MOSFET (Metal Oxide)------2.4W Ta 170W Tc--N-Channel-9mOhm @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V40V10V±20V------Non-RoHS CompliantD2PAK------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)2AVALANCHE RATED, HIGH RELIABILITYMOSFET (Metal Oxide)SINGLE26030R-PSSO-G21SINGLE WITH BUILT-IN DIODE3.8W Ta 160W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V100V10V±20V-42A0.036Ohm140A100V420 mJNon-RoHS Compliant-e3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerGULL WINGNot Qualified
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)2AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEMOSFET (Metal Oxide)SINGLE26030R-PSSO-G21SINGLE WITH BUILT-IN DIODE180W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V55V10V±20V-75A0.011Ohm290A55V250 mJNon-RoHS Compliant-e3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerGULL WINGNot Qualified
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