Infineon Technologies IRF1010NPBF

Name: IRF1010NPBF
Brand: Infineon Technologies
SKU: 2479368-IRF1010NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1010NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479368-IRF1010NPBF

Description:: MOSFET N-CH 55V 85A TO-220AB

ECAD Model:

Datasheet:: IRF1010NPBF

Specifications

Infineon Technologies IRF1010NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010NPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2001
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
11MOhm
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Current Rating
85A
Lead Pitch
2.54mm
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
180W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
180W
Case Connection
DRAIN
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11m Ω @ 43A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3210pF @ 25V
Current - Continuous Drain (Id) @ 25°C
85A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
76ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
48 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
85A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
290A
Dual Supply Voltage
55V
Avalanche Energy Rating (Eas)
250 mJ
Recovery Time
100 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
19.8mm
Length
10.6426mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRF1010NPBF Description
International Rectifier's innovative HEXFET? Power MOSFETs use cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This feature offers the designer a highly efficient and dependable device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are widely known for. For all commercial and industrial applications with power dissipation levels up to about 50 watts, the TO-220 package is always favored. The TO-220 is widely used in the industry due to its low thermal resistance and affordable packaging.

IRF1010NPBF Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

IRF1010NPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRF1010NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;TO-220AB;PD 180W;gFS 32S
Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 55V 85A 11mΩ 175°C TO-220 IRF1010NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 84A/55V TO220 IRF 1010 N PBF
Trans MOSFET N-CH 55V 85A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 180 W
Power Field-Effect Transistor, 85A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
MOSFET, N, 55V, 72A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:115W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:85A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:11mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:115W; Power Dissipation Pd:115W; Pulse Current Idm:270A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRF1010NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Terminal Finish

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

View Compare
IRF1010NPBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2001

e3

Active

1 (Unlimited)

3

Through Hole

EAR99

11MOhm

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET General Purpose Power

55V

MOSFET (Metal Oxide)

85A

2.54mm

1

1

180W Tc

Single

ENHANCEMENT MODE

180W

DRAIN

13 ns

N-Channel

SWITCHING

11m Ω @ 43A, 10V

4V @ 250μA

3210pF @ 25V

85A Tc

120nC @ 10V

76ns

10V

±20V

48 ns

39 ns

85A

4V

TO-220AB

20V

55V

290A

55V

250 mJ

100 ns

175°C

4 V

19.8mm

10.6426mm

4.82mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1324SPBF

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

HEXFET®

2008

-

Obsolete

1 (Unlimited)

-

SMD/SMT

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

1

-

300W Tc

-

-

300W

-

17 ns

N-Channel

-

1.65mOhm @ 195A, 10V

4V @ 250μA

7590pF @ 24V

195A Tc

240nC @ 10V

190ns

10V

±20V

120 ns

83 ns

340A

4V

-

20V

24V

-

24V

-

-

-

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

RoHS Compliant

-

D2PAK

175°C

-55°C

24V

7.59nF

1.65mOhm

1.65 mΩ

-

-

-

-

-

IRF1010NPBF vs IRF1324SPBF
IRF1405ZSPBF

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2003

e3

Discontinued

1 (Unlimited)

2

-

EAR99

4.9MOhm

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

1

-

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

18 ns

N-Channel

SWITCHING

4.9m Ω @ 75A, 10V

4V @ 250μA

4780pF @ 25V

75A Tc

180nC @ 10V

110ns

10V

±20V

82 ns

48 ns

75A

4V

-

20V

55V

600A

-

420 mJ

-

-

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G2

IRF1010NPBF vs IRF1405ZSPBF
IRF1310NSTRRPBF

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-

Tape & Reel (TR)

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

-

EAR99

-

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

1

-

3.8W Ta 160W Tc

Single

ENHANCEMENT MODE

3.8W

DRAIN

11 ns

N-Channel

SWITCHING

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

56ns

10V

±20V

40 ns

45 ns

42A

-

-

20V

100V

-

-

420 mJ

-

-

-

4.826mm

10.668mm

9.65mm

-

No

ROHS3 Compliant

-

-

175°C

-55°C

-

-

-

-

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G2

IRF1010NPBF vs IRF1310NSTRRPBF

Certification

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IRF1010NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF1010NPBF DISTI #33142737	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 85A 3-Pin(3 Tab) TO-220AB	7100	50 $0.7875
IRF1010NPBF DISTI #21115445	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 85A 3-Pin(3 Tab) TO-220AB	4625	25 $0.4144
IRF1010NPBF DISTI #33706334	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 85A 3-Pin(3 Tab) TO-220AB	1000	35 $0.7162
IRF1010NPBF DISTI #IRF1010NPBF-ND	Infineon Technologies AG	MOSFET N-CH 55V 85A TO-220AB RoHS: Compliant	774	1 $1.52 10 $1.355 25 $1.2864 100 $1.0566 1000 $0.68906 3000 $0.64313 5000 $0.61097
IRF1010NPBF DISTI #V99:2348_13891252	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 85A 3-Pin(3 Tab) TO-220AB	0	1000 $0.7809 10000 $0.7563 100000 $0.6163 500000 $0.5483 1000000 $0.5479
IRF1010NPBF DISTI #IRF1010NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 85A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	1000 $0.50432 2000 $0.48611 4000 $0.46854 6000 $0.45278 10000 $0.44473
IRF1010NPBF DISTI #IRF1010NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 85A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	0	1000 $0.432 2000 $0.42 3000 $0.40865 5000 $0.39789 10000 $0.39273 25000 $0.38769 50000 $0.38278
IRF1010NPBF DISTI #63J7171	Infineon Technologies AG	Trans MOSFET N-CH 55V 85A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0
IRF1010NPBF DISTI #SP001563032	Infineon Technologies AG	Trans MOSFET N-CH 55V 85A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	0	50 $0.5999 100 $0.4909 200 $0.4499 300 $0.4149 500 $0.3849
IRF1010NPBF DISTI #63J7171	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 85A TO-220AB, Transistor P	83	1 $1.54 10 $1.31 100 $1 500 $0.887 1000 $0.7 2500 $0.621 10000 $0.598
IRF1010NPBF. DISTI #26AC0571	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 85A TO-220AB, Transistor P	0	1 $1.58 10 $1.34 100 $1.02 500 $0.887 1000 $0.7 2500 $0.621 10000 $0.598
IRF1010NPBF DISTI #70016936	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 11 Mill RoHS: Compliant	0	1 $1.56 10 $1.38 100 $1.2 500 $1.04 1000 $0.92
IRF1010NPBF DISTI #	Infineon Technologies AG	Single N-Channel 55 V 11 mOhm 120 nC HEXFET Power RoHS: Compliant	11794	25 $0.755 250 $0.54 1000 $0.5 2000 $0.48
IRF1010NPBF DISTI #942-IRF1010NPBF	Infineon Technologies AG	MOSFET MOSFT 55V 72A 11mOhm 80nC RoHS: Compliant	0	1 $1.52 10 $1.3 100 $0.994 500 $0.878 1000 $0.693 2000 $0.615 10000 $0.592
IRF1010N DISTI #N/A	Infineon Technologies AG	MOSFET MOSFET, 55V, 72A, 11 mOhm, 80 nC Qg, TO-220	0
IRF1010NPBF DISTI #	Infineon Technologies AG	85 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFE	31	1 $2 4 $1.6 14 $1
IRF1010NPBF DISTI #	Infineon Technologies AG		39	4 $1.5 15 $0.975
IRF1010NPBF DISTI #5410777	Infineon Technologies AG	MOSFET N-CHANNEL 55V 85A TO220AB, EA	674	1 $1.98 10 $0.77 25 $0.7
IRF1010NPBF DISTI #IRF1010NPBF	Infineon Technologies AG	N-Ch 55V 75A 180W 0,011R TO220AB RoHS: Compliant	780	10 $0.6215 50 $0.4415 200 $0.3815 500 $0.3675
IRF1010NPBF DISTI #TMOSP11684	Infineon Technologies AG	N-CH 55V 72A 11mOhm TO220-3 RoHS: Compliant	0	1000 $0.4804
IRF1010NPBF DISTI #XSFP00000002579	Infineon Technologies AG	RoHS: Compliant	6369	186 $0.7714 6369 $0.72
IRF1010NPBF DISTI #8647976	Infineon Technologies AG	MOSFET, N, 55V, 72A, TO-220 RoHS: Compliant	6	1 $2.29 10 $2.05 25 $1.94 100 $1.6 1000 $1.04 3000 $0.97 5000 $0.923
IRF1010NPBF DISTI #8647976	Infineon Technologies AG	MOSFET, N, 55V, 72A, TO-220	137	1 $1.35 10 $1.07 100 $0.773 250 $0.728 500 $0.683

IRF1010~~(41)~~
IRF101~~(51)~~
IRF10~~(56)~~
IRF1~~(69)~~
IRF~~(69)~~

Infineon Technologies IRF1010NPBF

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