Infineon Technologies IRF1010EPBF

Name: IRF1010EPBF
Brand: Infineon Technologies
SKU: 2848818-IRF1010EPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1010EPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848818-IRF1010EPBF

Description:: MOSFET N-CH 60V 84A TO-220AB

ECAD Model:

Datasheet:: IRF1010EPBF

Specifications

Infineon Technologies IRF1010EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010EPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2001
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
12mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
84A
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
170W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3210pF @ 25V
Current - Continuous Drain (Id) @ 25°C
84A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Rise Time
78ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
53 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
84A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
75A
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Nominal Vgs
4 V
Height
16.51mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF1010EPBF Description
International Rectifier's IRF1010EPBF MOSFETs use innovative processing techniques to achieve extraordinarily low on-resistance per silicon area. This benefit, when paired with the high switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.

IRF1010EPBF Features
Technology for Advanced Processes
On-Resistance is really low.
Rating for Dynamic dv/dt
Operating Temperature: 175°C
Quick Switching
Avalanche-Resistant
Lead-Free

IRF1010EPBF Applications
IRF1010EPBF is intended for general use and can be used in a variety of situations.

IRF1010EPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 60V 84A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 60V, 84A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF1010EPBF.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRF1010EPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Terminal Finish

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Position

Qualification Status

Configuration

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
IRF1010EPBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2001

Active

1 (Unlimited)

3

Through Hole

EAR99

12mOhm

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

60V

MOSFET (Metal Oxide)

84A

2.54mm

1

200W Tc

Single

ENHANCEMENT MODE

170W

DRAIN

12 ns

N-Channel

SWITCHING

12m Ω @ 50A, 10V

4V @ 250μA

3210pF @ 25V

84A Tc

130nC @ 10V

78ns

10V

±20V

53 ns

48 ns

84A

4V

TO-220AB

20V

75A

60V

60V

4 V

16.51mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1405ZSPBF

Infineon Technologies

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2003

Discontinued

1 (Unlimited)

2

-

EAR99

4.9MOhm

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

1

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

18 ns

N-Channel

SWITCHING

4.9m Ω @ 75A, 10V

4V @ 250μA

4780pF @ 25V

75A Tc

180nC @ 10V

110ns

10V

±20V

82 ns

48 ns

75A

4V

-

20V

-

55V

-

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G2

600A

420 mJ

-

-

-

-

-

-

-

-

IRF1010EPBF vs IRF1405ZSPBF
IRF1104STRL

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

2.4W Ta 170W Tc

-

-

-

-

-

N-Channel

-

9mOhm @ 60A, 10V

4V @ 250μA

2900pF @ 25V

100A Tc

93nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

D2PAK

40V

-

-

-

-

-

-

IRF1010EPBF vs IRF1104STRL
IRF1310NSTRR

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

Obsolete

1 (Unlimited)

2

-

EAR99

-

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

1

3.8W Ta 160W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

-

10V

±20V

-

-

-

-

-

-

42A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G2

140A

420 mJ

-

100V

YES

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

0.036Ohm

100V

IRF1010EPBF vs IRF1310NSTRR

Certification

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IRF1010EPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF1010EPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 84A 3-Pin(3 Tab) TO-220AB	900	1 $1.0636 10 $0.9509 100 $0.7784 500 $0.7062 1000 $0.5847
IRF1010EPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 60V 84A TO-220AB RoHS: Compliant	1280	1 $1.71 10 $1.52 100 $1.2187 500 $0.96308 1000 $0.77722
IRF1010EPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 84A 3-Pin(3 Tab) TO-220AB	4672	26 $0.5424 200 $0.5088 1000 $0.4608
IRF1010EPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 84A 3-Pin(3 Tab) TO-220AB	980	10 $1.428 50 $1.2597 100 $1.0646 200 $0.9805
IRF1010EPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 84A 3-Pin(3 Tab) TO-220AB	900	14 $0.9509 100 $0.7784 500 $0.7062
IRF1010EPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 60V 84A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	166	1 $1.0229 10 $0.9199 25 $0.9179 50 $0.9149 100 $0.7509 500 $0.6809 1000 $0.6139
IRF1010EPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 60V 84A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	1850	1 $2.2199 10 $2.2139 25 $0.9619 50 $0.9599 100 $0.7099 500 $0.6479 1000 $0.6459
IRF1010EPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 60V 84A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	0
IRF1010EPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 60V, 84A TO-220AB, Transistor P	189	1 $1.57 10 $1.35 100 $1.05 500 $0.942 1000 $0.762 2500 $0.686 10000 $0.664
IRF1010EPBF. DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 60V, 84A TO-220AB, Transistor P	0	1 $1.6 10 $1.38 100 $1.07 500 $0.942 1000 $0.762 2500 $0.686 10000 $0.664
IRF1010EPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 12 Mill RoHS: Compliant	197	1 $1.314 10 $1.159 100 $1.011 500 $0.876 1000 $0.773
IRF1010EPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 60V 81A 12mOhm 86.6nC RoHS: Compliant	1883	1 $1.39 10 $1.19 100 $0.909 500 $0.803 1000 $0.634 2000 $0.562 10000 $0.541
IRF1010EPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 60V 84A TO220AB, EA	897	1 $2 25 $0.71 100 $0.55 250 $0.52 500 $0.48
IRF1010EPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 60V, 81A, 170W	1063	1 $0.81 5 $0.74 25 $0.61 100 $0.52
IRF1010EPBF DISTI #	Infineon Technologies AG	INSTOCK	909
IRF1010EPBF DISTI #	Infineon Technologies AG	MOSFET, N, 60V, 81A, TO-220 RoHS: Compliant	670	1 $2.2 10 $1.88 100 $1.44 500 $1.28 1000 $1.01 2000 $0.89 10000 $0.856
IRF1010EPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 84A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	980	1 $2.17 10 $1.12 50 $0.988 100 $0.835 200 $0.769 500 $0.748
IRF1010EPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 84A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	4672	5 $1.39 25 $1.01 50 $0.903 100 $0.759 500 $0.682 1000 $0.63
IRF1010EPBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	18792	1550 $0.4571 18792 $0.4267
IRF1010EPBF DISTI #	Infineon Technologies AG	60V,12m,84A,N-Channel Power MOSFET	800	1 $0.98 100 $0.82 500 $0.72 1000 $0.7
IRF1010EPBF DISTI #	Infineon Technologies AG	MOSFET, N, 60V, 81A, TO-220 RoHS: Compliant	725	5 $1.01 25 $0.724 100 $0.561 250 $0.53 500 $0.49

IRF1010~~(41)~~
IRF101~~(51)~~
IRF10~~(56)~~
IRF1~~(69)~~
IRF~~(69)~~

Infineon Technologies IRF1010EPBF

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