Infineon Technologies IPB180N04S4L01ATMA1

Name: IPB180N04S4L01ATMA1
Brand: Infineon Technologies
SKU: 2489150-IPB180N04S4L01ATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPB180N04S4L01ATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2489150-IPB180N04S4L01ATMA1

Description:: MOSFET N-CH TO263-7

ECAD Model:

Datasheet:: IPB180N04S4L01ATMA1

Specifications

Infineon Technologies IPB180N04S4L01ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB180N04S4L01ATMA1.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-7, D2Pak (6 Leads Tab)
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, OptiMOS™
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G6
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
188W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 140μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
19100pF @ 25V
Current - Continuous Drain (Id) @ 25°C
180A Tc
Gate Charge (Qg) (Max) @ Vgs
245nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
20V, -16V
Continuous Drain Current (ID)
180A
Max Dual Supply Voltage
40V
Drain-source On Resistance-Max
0.0012Ohm
Pulsed Drain Current-Max (IDM)
720A
Avalanche Energy Rating (Eas)
550 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

IPB180N04S4L01ATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 550 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 19100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 180A continuous drain current (ID).Peak drain current is 720A, which is the maximum pulsed drain current.In addition to 40V, it supports dual voltages up to the maximum.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

IPB180N04S4L01ATMA1 Features
the avalanche energy rating (Eas) is 550 mJ
a continuous drain current (ID) of 180A
based on its rated peak drain current 720A.

IPB180N04S4L01ATMA1 Applications
There are a lot of Infineon Technologies
IPB180N04S4L01ATMA1 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IPB180N04S4L01ATMA1 More Descriptions

40V, N-Ch, 1.2 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHSInfineon SCT
Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6 Tab) D2PAK T/R
Summary of Features: N-channel Logic Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested

Product Comparison

The three parts on the right have similar specifications to IPB180N04S4L01ATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Surface Mount

ECCN Code

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

JESD-609 Code

Terminal Finish

Subcategory

Pin Count

Qualification Status

Transistor Application

View Compare
IPB180N04S4L01ATMA1

Infineon Technologies

14 Weeks

Surface Mount

Surface Mount

TO-263-7, D2Pak (6 Leads Tab)

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

Automotive, AEC-Q101, OptiMOS™

2013

yes

Active

1 (Unlimited)

6

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G6

1

SINGLE WITH BUILT-IN DIODE

188W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

1.2m Ω @ 100A, 10V

2.2V @ 140μA

Halogen Free

19100pF @ 25V

180A Tc

245nC @ 10V

4.5V 10V

20V, -16V

180A

40V

0.0012Ohm

720A

550 mJ

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-
IPB100N10S3-05

Infineon Technologies

-

-

-

PG-TO263-3

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

IPB180N04S4L01ATMA1 vs IPB100N10S3-05
IPB100N06S205ATMA1

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2006

-

Discontinued

1 (Unlimited)

2

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

-

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

300W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

4.7m Ω @ 80A, 10V

4V @ 250μA

-

5110pF @ 25V

100A Tc

170nC @ 10V

10V

±20V

-

-

0.0047Ohm

400A

810 mJ

ROHS3 Compliant

-

YES

EAR99

55V

100A

55V

-

-

-

-

-

-

IPB180N04S4L01ATMA1 vs IPB100N06S205ATMA1
IPB136N08N3 G

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

OptiMOS™

2011

yes

Obsolete

1 (Unlimited)

2

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

compliant

40

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

79W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

13.6m Ω @ 45A, 10V

3.5V @ 33μA

-

1730pF @ 40V

45A Tc

25nC @ 10V

6V 10V

±20V

-

-

0.0136Ohm

180A

50 mJ

RoHS Compliant

-

YES

EAR99

80V

45A

80V

e3

MATTE TIN

FET General Purpose Power

4

Not Qualified

SWITCHING

IPB180N04S4L01ATMA1 vs IPB136N08N3 G

Certification

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IPB180N~~(21)~~
IPB180~~(23)~~
IPB18~~(23)~~
IPB1~~(71)~~
IPB~~(73)~~

Part Number	Manufacturers	Description	Price
IPB180N04S4L01ATMA1 DISTI #V36:1790_06382997	Infineon Technologies AG	Trans MOSFET N-CH 40V 180A Automotive T/R RoHS: Compliant
IPB180N04S4L01ATMA1 DISTI #IPB180N04S4L01ATMA1-ND	Infineon Technologies AG	MOSFET N-CH TO263-7 RoHS: Compliant	1000 $1.37314
IPB180N04S4L01ATMA1 DISTI #IPB180N04S4L01ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R - Tape RoHS: Compliant	1000 $1.2399 2000 $1.1949 4000 $1.1519 6000 $1.1129 10000 $1.0929
IPB180N04S4L01ATMA1 DISTI #SP000979928	Infineon Technologies AG	Trans MOSFET N-CH 40V 180A 7-Pin TO-263 T/R (Alt: RoHS: Compliant	1000 $1.3969 2000 $1.1639 4000 $1.0749 6000 $0.9979 10000 $0.9309
IPB180N04S4L01ATMA1 DISTI #726-IPB180N04S4L01AT	Infineon Technologies AG	MOSFET N-CHANNEL 30/40V	1 $2.53 10 $2.15 100 $1.72 500 $1.5 1000 $1.24 2000 $1.16 5000 $1.12

Infineon Technologies IPB180N04S4L01ATMA1

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