Infineon Technologies IPB180N04S400ATMA1
- Part Number:
- IPB180N04S400ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483910-IPB180N04S400ATMA1
- Description:
- MOSFET N-CH 40V 180A TO263-7-3
- ECAD Model:
-
- Datasheet:
- IPB180N04S400ATMA1
Infineon Technologies IPB180N04S400ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB180N04S400ATMA1.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-7, D2Pak (6 Leads Tab)
- Number of Pins7
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2010
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Additional FeatureULTRA-LOW RESISTANCE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Reference StandardAEC-Q101
- JESD-30 CodeR-PSSO-G6
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time53 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs0.98m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id4V @ 230μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds22880pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs286nC @ 10V
- Rise Time24ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)58 ns
- Turn-Off Delay Time67 ns
- Continuous Drain Current (ID)180A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage40V
- Drain-source On Resistance-Max0.00098Ohm
- Avalanche Energy Rating (Eas)1250 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPB180N04S400ATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1250 mJ.The maximum input capacitance of this device is 22880pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 180A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 67 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 53 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 40V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPB180N04S400ATMA1 Features
the avalanche energy rating (Eas) is 1250 mJ
a continuous drain current (ID) of 180A
the turn-off delay time is 67 ns
IPB180N04S400ATMA1 Applications
There are a lot of Infineon Technologies
IPB180N04S400ATMA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1250 mJ.The maximum input capacitance of this device is 22880pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 180A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 67 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 53 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 40V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPB180N04S400ATMA1 Features
the avalanche energy rating (Eas) is 1250 mJ
a continuous drain current (ID) of 180A
the turn-off delay time is 67 ns
IPB180N04S400ATMA1 Applications
There are a lot of Infineon Technologies
IPB180N04S400ATMA1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IPB180N04S400ATMA1 More Descriptions
40V, N-Ch, 0.98 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHSInfineon SCT
Single N-Channel 40 V 0.98 Ohm 220 nC OptiMOS Power Mosfet - D2PAK-7
Power MOSFET, N Channel, 40 V, 180 A, 0.98 Milliohms, TO-263, 7 Pins, Surface Mount
MU Transistor N-MOSFET 40V 180A 1mOhm TO263
MOSFET, N-CH, 40V, 180A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:40V; On Resistance
MOSFET, N-CH, 40V, 180A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 800µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
Single N-Channel 40 V 0.98 Ohm 220 nC OptiMOS Power Mosfet - D2PAK-7
Power MOSFET, N Channel, 40 V, 180 A, 0.98 Milliohms, TO-263, 7 Pins, Surface Mount
MU Transistor N-MOSFET 40V 180A 1mOhm TO263
MOSFET, N-CH, 40V, 180A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:40V; On Resistance
MOSFET, N-CH, 40V, 180A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 800µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
The three parts on the right have similar specifications to IPB180N04S400ATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)RoHS StatusLead FreeJESD-609 CodeTerminal FinishReach Compliance CodePulsed Drain Current-Max (IDM)Surface MountDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinPbfree CodeSubcategoryPin CountQualification StatusTransistor ApplicationView Compare
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IPB180N04S400ATMA116 WeeksSurface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)7SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2010Active1 (Unlimited)6EAR99ULTRA-LOW RESISTANCEMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDAEC-Q101R-PSSO-G61SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAIN53 nsN-Channel0.98m Ω @ 100A, 10V4V @ 230μAHalogen Free22880pF @ 25V180A Tc286nC @ 10V24ns10V±20V58 ns67 ns180A20V40V0.00098Ohm1250 mJROHS3 CompliantContains Lead-------------- -
14 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Not For New Designs1 (Unlimited)2EAR99-MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIED-R-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAIN26 nsN-Channel6.8m Ω @ 80A, 10V4V @ 250μAHalogen Free4700pF @ 25V100A Tc200nC @ 10V51ns10V±20V30 ns61 ns100A20V75V0.0068Ohm810 mJROHS3 CompliantContains Leade3Tin (Sn)not_compliant400A---------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006Discontinued1 (Unlimited)2EAR99-MOSFET (Metal Oxide)SINGLEGULL WING---R-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAIN-N-Channel4.7m Ω @ 80A, 10V4V @ 250μA-5110pF @ 25V100A Tc170nC @ 10V-10V±20V-----0.0047Ohm810 mJROHS3 Compliant----400AYES55V100A55V-----
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011Obsolete1 (Unlimited)2EAR99-MOSFET (Metal Oxide)SINGLEGULL WING26040-R-PSSO-G21SINGLE WITH BUILT-IN DIODE79W TcENHANCEMENT MODEDRAIN-N-Channel13.6m Ω @ 45A, 10V3.5V @ 33μA-1730pF @ 40V45A Tc25nC @ 10V-6V 10V±20V-----0.0136Ohm50 mJRoHS Compliant-e3MATTE TINcompliant180AYES80V45A80VyesFET General Purpose Power4Not QualifiedSWITCHING
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