Infineon Technologies IPB180N03S4L01ATMA1

IPB180N03S4L01ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 530 mJ.A device's maximum input capacitance is 17600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 180A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 57 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

IPB180N03S4L01ATMA1 Features
the avalanche energy rating (Eas) is 530 mJ
a continuous drain current (ID) of 180A
the turn-off delay time is 57 ns


IPB180N03S4L01ATMA1 Applications
There are a lot of Infineon Technologies
IPB180N03S4L01ATMA1 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters